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SI8800EDB-T2-E1
SI8800EDB-T2-E1
SI8800EDB-T2-E1
SI8800EDB-T2-E1
SI8800EDB-T2-E1SI8800EDB-T2-E1SI8800EDB-T2-E1SI8800EDB-T2-E1
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SI8800EDB-T2-E1

Mfr. #:
SI8800EDB-T2-E1
Fabricante:
Vishay
Descripción:
MOSFET N-CH 20V MICROFOOT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI8800EDB-T2-E1 Ficha de datos
ECAD Model:

Disponibilidad

Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de SI8800EDB-T2-E1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Cantidad
Precio unitario
Ext. Precio
1
0,17 US$
0,17 US$
10
0,16 US$
1,61 US$
100
0,15 US$
15,24 US$
500
0,14 US$
71,95 US$
1000
0,14 US$
135,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET - Single
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Estilo de montaje
SMD / SMT
Paquete-Estuche
4-XFBGA, CSPBGA
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
4-Microfoot
Configuración
Doble
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
500mW
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
20V
Entrada-Capacitancia-Ciss-Vds
-
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
-
Rds-On-Max-Id-Vgs
80 mOhm @ 1A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Puerta-Carga-Qg-Vgs
8.3nC @ 8V
Disipación de potencia Pd
900 mW
Temperatura máxima de funcionamiento
+ 125 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
8 V
Id-corriente-de-drenaje-continua
2.8 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Resistencia a la fuente de desagüe de Rds
95 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
5.5 nC
Transconductancia directa-Mín.
10 S
Tags
SI8800, SI880, Si88, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 20 V 8 mO 3.2 nC Surface Mount Power Mosfet - MICRO FOOT
***ark
N-Ch Mosfet Mfoot 1X1 20V 80Mohm @ 4.5V Rohs Compliant: No
***et Europe
Trans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R
***i-Key
MOSFET N-CH 20V MICROFOOT
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
Parte # Mfg. Descripción Valores Precio
SI8800EDB-T2-E1
DISTI # V72:2272_09216579		Vishay IntertechnologiesTrans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R
RoHS: Compliant		5755
  • 3000:$0.1433
  • 1000:$0.1597
  • 500:$0.1955
  • 250:$0.2278
  • 100:$0.2285
  • 25:$0.2837
  • 10:$0.2849
  • 1:$0.3432
SI8800EDB-T2-E1
DISTI # SI8800EDB-T2-E1CT-ND		Vishay SiliconixMOSFET N-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		55890In Stock
  • 1000:$0.1951
  • 500:$0.2525
  • 100:$0.3443
  • 10:$0.4590
  • 1:$0.5500
SI8800EDB-T2-E1
DISTI # SI8800EDB-T2-E1DKR-ND		Vishay SiliconixMOSFET N-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		55890In Stock
  • 1000:$0.1951
  • 500:$0.2525
  • 100:$0.3443
  • 10:$0.4590
  • 1:$0.5500
SI8800EDB-T2-E1
DISTI # SI8800EDB-T2-E1TR-ND		Vishay SiliconixMOSFET N-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		54000In Stock
  • 3000:$0.1727
SI8800EDB-T2-E1
DISTI # 29727522		Vishay IntertechnologiesTrans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R
RoHS: Compliant		5755
  • 3000:$0.1433
  • 1000:$0.1597
  • 500:$0.1955
  • 250:$0.2278
  • 100:$0.2285
  • 49:$0.2837
SI8800EDB-T2-E1
DISTI # SI8800EDB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R (Alt: SI8800EDB-T2-E1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 9000
  • 3000:$2.0720
  • 6000:$1.4290
  • 9000:$1.0626
  • 15000:$0.8633
  • 30000:$0.7819
  • 75000:$0.7534
  • 150000:$0.7270
SI8800EDB-T2-E1
DISTI # SI8800EDB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8800EDB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
  • 3000:$0.1349
  • 6000:$0.1309
  • 12000:$0.1259
  • 18000:$0.1219
  • 30000:$0.1189
SI8800EDB-T2-E1
DISTI # SI8800EDB-T2-E1		Vishay IntertechnologiesTrans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R (Alt: SI8800EDB-T2-E1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.2819
  • 6000:€0.1919
  • 12000:€0.1649
  • 18000:€0.1529
  • 30000:€0.1419
SI8800EDB-T2-E1
DISTI # 86R3936		Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:2.8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.066ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:4Pins , RoHS Compliant: Yes0
  • 1:$0.1500
  • 3000:$0.1490
  • 6000:$0.1420
  • 12000:$0.1260
SI8800EDB-T2-E1
DISTI # 69W7244		Vishay IntertechnologiesMOSFET, N CHANNEL, 20V, 2.8A, MICRO FOOT-4,Transistor Polarity:N Channel,Continuous Drain Current Id:2.8A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.066ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes0
  • 1:$0.2930
  • 10:$0.2840
  • 100:$0.2240
  • 250:$0.2130
  • 500:$0.1990
  • 1000:$0.1590
SI8800EDB-T2-E1
DISTI # 781-SI8800EDB-T2-E1		Vishay IntertechnologiesMOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
RoHS: Compliant		5686
  • 1:$0.4800
  • 10:$0.3660
  • 100:$0.2720
  • 500:$0.2230
  • 1000:$0.1730
  • 3000:$0.1580
  • 6000:$0.1470
SI8800EDB-T2-E1Vishay IntertechnologiesSingle N-Channel 20 V 8 mO 3.2 nC Surface Mount Power Mosfet - MICRO FOOT
RoHS: Compliant		3000Reel
  • 3000:$0.1530
  • 6000:$0.1300
SI8800EDB-T2-E1
DISTI # C1S803601645351		Vishay IntertechnologiesMOSFETs
RoHS: Not Compliant		5755
  • 250:$0.2271
  • 100:$0.2278
  • 25:$0.2824
  • 10:$0.2837
SI8800EDB-T2-E1
DISTI # XSFP00000106590		Vishay Siliconix 
RoHS: Compliant		8076
  • 3000:$0.2093
  • 8076:$0.1962
Imagen Parte # Descripción
SI8800EDB-T2-E1

Mfr.#: SI8800EDB-T2-E1

OMO.#: OMO-SI8800EDB-T2-E1

 MOSFET 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
SI8800EDB-T2-E1

Mfr.#: SI8800EDB-T2-E1

OMO.#: OMO-SI8800EDB-T2-E1-VISHAY

 MOSFET N-CH 20V MICROFOOT
SI8800EDB-T2-E1DKR-ND

Mfr.#: SI8800EDB-T2-E1DKR-ND

OMO.#: OMO-SI8800EDB-T2-E1DKR-ND-1190

 Nuevo y original
SI8800EDB-T2-E1.

Mfr.#: SI8800EDB-T2-E1.

OMO.#: OMO-SI8800EDB-T2-E1--1190

 N-CH MOSFET MFOOT 1X1 20V 80MOHM @ 4.5V ROHS COMPLIANT: NO
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