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IPD80N06S3-09

IPD80N06S3-09
Mfr. #:
IPD80N06S3-09
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 55V 80A DPAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD80N06S3-09 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPD80N06S3-09 DatasheetIPD80N06S3-09 Datasheet (P4-P6)IPD80N06S3-09 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
55 V
Id - Corriente de drenaje continua:
80 A
Rds On - Resistencia de la fuente de drenaje:
8.4 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
107 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon Technologies
Otoño:
37 ns
Tipo de producto:
MOSFET
Hora de levantarse:
42 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
26 ns
Tiempo típico de retardo de encendido:
23 ns
Parte # Alias:
IPD80N06S309XT
Unidad de peso:
0.139332 oz
Tags
IPD80N, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
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***ure Electronics
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***essParts.Net
INTERNATIONAL RECTIFIER IRLR3705ZPBF / MOSFET N-CH 55V 42A DPAK INTER
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 6.5 Milliohms,ID 42A,D-Pak (TO-252AA),-55C
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55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
N CHANNEL MOSFET, 55V, 89A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:89A;
*** Stop Electro
Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N, LOGIC, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 89A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 130W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: D-PAK; Current Id Max: 89A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 130A; SMD Marking: IRLR3705Z; Termination Type: Surface Mount Device; Voltage Vds Typ: 55V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V
***ineon SCT
60V, N-Ch, 6.9 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
***ical
Trans MOSFET N-CH 60V 90A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested; Ultra low RDSon | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***et Europe
Trans MOSFET N-CH 60V 97A 3-Pin TO-252 T/R
***ronik
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***el Electronic
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40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
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Trans MOSFET N-CH 60V 14.8A Automotive 3-Pin(2+Tab) DPAK T/R
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60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***et
MOSFET BVDSS: 41V~60V TO252 T&R 2.5K
***i-Key
MOSFET N-CH 60V 14.8A/70A TO252
Parte # Mfg. Descripción Valores Precio
IPD80N06S3-09
DISTI # IPD80N06S3-09-ND		Infineon Technologies AGMOSFET N-CH 55V 80A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD80N06S3-09
    DISTI # IPD80N06S3-09    		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-252 - Bulk (Alt: IPD80N06S3-09)
    RoHS: Not Compliant
    Min Qty: 695
    Container: Bulk    		Americas - 0
    • 6950:$0.4569
    • 3475:$0.4649
    • 2085:$0.4809
    • 1390:$0.4999
    • 695:$0.5179
    IPD80N06S3-09
    DISTI # 726-IPD80N06S3-09    		Infineon Technologies AGMOSFET N-Ch 55V 80A DPAK-2
    RoHS: Compliant    		0
      IPD80N06S3-09Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant      		7004
      • 1000:$0.4700
      • 500:$0.5000
      • 100:$0.5200
      • 25:$0.5400
      • 1:$0.5800
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      Mfr.#: IPD80N04S306ATMA1

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      OMO.#: OMO-IPD80N06S3-09-INFINEON-TECHNOLOGIES

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      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de IPD80N06S3-09 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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