BSO330N02K G

Mfr. #:: BSO330N02K G
Fabricante:
Descripción:: IGBT Transistors MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: BSO330N02K G Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Atributo del producto
Valor de atributo

Fabricante

categoria de producto: FET: matrices

Serie: OptiMOS 2

embalaje: Carrete

Alias de parte: BSO330N02KGFUMA1 SP000380284

Estilo de montaje: SMD / SMT

Nombre comercial: OptiMOS

Paquete-Estuche: DSO-8

Tecnología: Si

Número de canales: 2 Channel

Configuración: Dual Dual Drain

Tipo transistor: 2 N-Channel

Disipación de potencia Pd: 2.5 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 2.8 ns

Hora de levantarse: 16.8 ns

Vgs-Puerta-Fuente-Voltaje: 12 V

Id-corriente-de-drenaje-continua: 5.4 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Resistencia a la fuente de desagüe de Rds: 30 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 13.4 ns

Tiempo de retardo de encendido típico: 7.4 ns

Modo de canal: Mejora

Tags: BSO330N02KG, BSO33, BSO3, BSO

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSO330N02K G Descripción

***et: Transistor MOSFET Array Dual N-Channel 20V 5.4A 8-Pin DSO

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

*** International: BSO330N02KG INFINEO

***nell: MOSFET, N CH, 6.5A, 20V, PG-DSO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.4A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 950mV; Power Dissipation Pd: 2.5W; Transistor Case Style: DSO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 12V

***(Formerly Allied Electronics): IRF7311PBF Dual N-channel MOSFET Transistor; 6.6 A; 20 V; 8-Pin SOIC

***Yang: Transistor MOSFET Array Dual N-CH 20V 6.6A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: Dual N-Channel 20 V 0.029 Ohm 18 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.029ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700m

***ure Electronics: Dual N & P-Channel 20 V 30 mOhm PowerTrench® Mosfet - SOIC-8

***et Europe: Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R

***Yang: Trans MOSFET N/P-CH 20V 6.5A/5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Al

***roFlash: Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, N & P CH 8SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***emi: Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ

***ure Electronics: Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***Yang: Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r

***el Electronic: ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V

***ment14 APAC: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).

***ure Electronics: Dual N-Channel 20 V 30 mOhm 13 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: MOSFET 2N-CH 20V 7A 8-SOIC / Trans MOSFET N-CH Si 20V 7A 8-Pin SOIC T/R

***ineon: Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET

***ark: Mosfet, Dual N-Ch, 20V, 7A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes

***emi: Small Signal MOSFET 20V 4.2A 45 mOhm Single N-Channel SO-8

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:4.2A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:0.95V ;RoHS Compliant: Yes

***nell: MOSFET, N, 20V, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 950mV; Power Dissipation Pd: 770mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 4.2A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 20V; Voltage Vgs Max: 950mV; Voltage Vgs Rds on Measurement: 4.5V

Market price

Parte #	Mfg.	Descripción	Valores	Precio
BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1TR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1CT-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1DKR-ND	Infineon Technologies AG	MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BSO330N02K G DISTI # 726-BSO330N02KG	Infineon Technologies AG	MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2 RoHS: Compliant	2299	1:$0.9300 10:$0.7200 100:$0.5510 500:$0.4660 1000:$0.3710 2500:$0.3070 5000:$0.2860 10000:$0.2750 25000:$0.2650
BSO330N02KG	Infineon Technologies AG	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	2746	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
BSO330N02KGFUMA1	Infineon Technologies AG	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	12500	1000:$0.2700 500:$0.2800 100:$0.2900 25:$0.3000 1:$0.3300

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: BSO330N02K(330N2K) OMO.#: OMO-BSO330N02K-330N2K--1190	Nuevo y original
	Mfr.#: BSO330N02KG OMO.#: OMO-BSO330N02KG-1190	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSO330N02KGFUMA1 OMO.#: OMO-BSO330N02KGFUMA1-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 20V 5.4A 8DSO
	Mfr.#: BSO330N02K G OMO.#: OMO-BSO330N02K-G-126	IGBT Transistors MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2

Disponibilidad

Valores:: Available
En orden:: 1000
Ingrese la cantidad:

El precio actual de BSO330N02K G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,40 US$~~; ~~0,40 US$~~

10: ~~0,38 US$~~; ~~3,78 US$~~

100: ~~0,36 US$~~; ~~35,78 US$~~

500: ~~0,34 US$~~; ~~168,95 US$~~

1000: ~~0,32 US$~~; ~~318,00 US$~~

Empezar con

BSO330N02KG 3
BSO33 4
BSO3 40
BSO 258

BSO330N02K G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes