OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IXXN110N65C4H1

IXXN110N65C4H1
Mfr. #:
IXXN110N65C4H1
Fabricante:
Littelfuse
Descripción:
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXXN110N65C4H1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXXN110N65C4H1 DatasheetIXXN110N65C4H1 Datasheet (P4-P6)IXXN110N65C4H1 Datasheet (P7)
ECAD Model:
Más información:
IXXN110N65C4H1 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
Módulos IGBT
RoHS:
Y
Producto:
Módulos de silicio IGBT
Configuración:
Emisor doble único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.98 V
Corriente continua del colector a 25 C:
210 A
Corriente de fuga puerta-emisor:
100 nA
Pd - Disipación de energía:
750 W
Paquete / Caja:
SOT-227B-4
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Serie:
IXXN110N65
Marca:
IXYS
Estilo de montaje:
SMD / SMT
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
10
Subcategoría:
IGBT
Nombre comercial:
XPT
Unidad de peso:
1.058219 oz
Tags
IXXN1, IXXN, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
GenX4™ XPT™ 640 V 210 A Extreme Light Punch Through IGBT - SOT227B
***roFlash
Insulated Gate Bipolar Transistor, 210A I(C), 650V V(BR)CES, N-Channel
***ical
Trans IGBT Chip N-CH 650V 200A 750000mW 4-Pin SOT-227B
***el Electronic
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
***i-Key
IGBT MOD 650V 210A 750W SOT227B
IGBT Modules
Littelfuse IGBT Modules offer a comprehensive portfolio. The Littelfuse IGBT Modules range from phase legs to six-packs and everything in between. This makes Littelfuse able to accommodate a wide array of topology and package requirements.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Parte # Mfg. Descripción Valores Precio
IXXN110N65C4H1
DISTI # IXXN110N65C4H1-ND		IXYS CorporationIGBT 650V 210A 750W SOT227B
RoHS: Compliant
Min Qty: 1
Container: Tube		375In Stock
  • 250:$17.3260
  • 100:$18.8794
  • 30:$20.3133
  • 10:$22.1060
  • 1:$23.9000
IXXN110N65C4H1
DISTI # 747-IXXN110N65C4H1		IXYS CorporationIGBT Modules 650V/234A Trench IGBT GenX4 XPT
RoHS: Compliant		1973
  • 1:$23.9000
  • 5:$22.7600
  • 10:$22.1100
  • 25:$20.3200
  • 50:$19.4600
  • 100:$18.8800
  • 200:$17.3300
IXXN110N65C4H1IXYS Corporation 20
    Imagen Parte # Descripción
    UC2854BN

    Mfr.#: UC2854BN

    OMO.#: OMO-UC2854BN

    		 Power Factor Correction - PFC Enhanced High Power Factor Preregulator
    APT200GN60JDQ4

    Mfr.#: APT200GN60JDQ4

    OMO.#: OMO-APT200GN60JDQ4

    		 IGBT Modules FG, IGBT-COMBI, 600V, 200A, SOT-227
    UC2875DWP

    Mfr.#: UC2875DWP

    OMO.#: OMO-UC2875DWP

    		 Switching Controllers Phase Shift Resonant Controller
    IXXN110N65B4H1

    Mfr.#: IXXN110N65B4H1

    OMO.#: OMO-IXXN110N65B4H1

    		 IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
    471-015

    Mfr.#: 471-015

    OMO.#: OMO-471-015

    		 Programmable Logic IC Development Tools ZYBO Z7-20 + SDSoC voucher
    ISO224EVM

    Mfr.#: ISO224EVM

    OMO.#: OMO-ISO224EVM

    		 Amplifier IC Development Tools ISO224EVM
    APT200GN60JDQ4

    Mfr.#: APT200GN60JDQ4

    OMO.#: OMO-APT200GN60JDQ4-MICROSEMI

    		 IGBT Modules
    IXFN160N30T

    Mfr.#: IXFN160N30T

    OMO.#: OMO-IXFN160N30T-IXYS-CORPORATION

    		 MOSFET N-CH 300V 130A SOT227
    ISO224EVM

    Mfr.#: ISO224EVM

    OMO.#: OMO-ISO224EVM-TEXAS-INSTRUMENTS

    		 EVAL BOARD FOR ISO224
    CRCW0805100RJNEAC

    Mfr.#: CRCW0805100RJNEAC

    OMO.#: OMO-CRCW0805100RJNEAC-VISHAY-DALE

    		 D12/CRCW0805-C 200 100R 5% ET1
    Disponibilidad
    Valores:
    310
    En orden:
    2293
    Ingrese la cantidad:
    El precio actual de IXXN110N65C4H1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    23,90 US$
    23,90 US$
    5
    22,76 US$
    113,80 US$
    10
    22,10 US$
    221,00 US$
    25
    20,31 US$
    507,75 US$
    50
    19,46 US$
    973,00 US$
    100
    18,87 US$
    1 887,00 US$
    200
    17,32 US$
    3 464,00 US$
    500
    16,13 US$
    8 065,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    More Newest Products
    Top