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FDS8672S

FDS8672S
Mfr. #:
FDS8672S
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 30V N-Channel PowerTrench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDS8672S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
18 A
Rds On - Resistencia de la fuente de drenaje:
4.8 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
PowerTrench SyncFET
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Producto:
Pequeña señal MOSFET
Serie:
FDS8672S
Tipo de transistor:
1 N-Channel
Ancho:
3.9 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
4 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
26 ns
Tiempo típico de retardo de encendido:
12 ns
Unidad de peso:
0.004586 oz
Tags
FDS8672, FDS867, FDS86, FDS8, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 30V 18A 8-Pin SOIC T/R / MOSFET N-CH 30V 18A 8-SOIC
***ure Electronics
N-Channel 30 V 4.8 mO 2.5 W PowerTrench SyncFET Surface Mount- SOIC-8
***nell
MOSFET, N CH, 30V, 18A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low rDS(on) and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic SyncFET technology.
***roFlash
IRF8736PBF N-channel MOSFET Transistor, 18 A, 30 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 6.8 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 30V 18A 8-Pin SOIC Tube / MOSFET N-CH 30V 18A 8-SOIC
***(Formerly Allied Electronics)
MOSFET; N Ch.; 30V; 18A; 4.8 MOHM; 17 NC QG; SO-8; Pb-Free
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single N-Channel 30 V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8
***roFlash
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.32V; Power Dissi
***ure Electronics
N-Channel 30 V 4.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ
***Yang
Trans MOSFET N-CH 30V 18.5A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***ment14 APAC
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5mW; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:74A; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
*** Source Electronics
Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R / MOSFET N-CH 30V 14.5A 8-SOIC
***ark
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,14.5A I(D),SO
***emi
N-Channel PowerTrench® SyncFET™, 30V, 14.5A, 6.0mΩ
***nell
MOSFET, N CH, 30V, 14.5A, SOIC-8; Transistor Polarity: N Channel + Schottky; Continuous Drain Current Id: 14.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltag
***rchild Semiconductor
The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
***Yang
Trans MOSFET P-CH 30V 20A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***ure Electronics
P-Channel 30 V 4.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
P-Channel PowerTrench® MOSFET, 30V, -20A, 4.6mΩ
*** Electronics
ON SEMICONDUCTOR - FDS6681Z - MOSFET Transistor, P Channel, -20 A, -30 V, 0.0038 ohm, -10 V, -1.8 V
***p One Stop
Trans MOSFET P-CH 30V 20A 8-Pin SOIC N T/R
***rchild Semiconductor
This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Parte # Mfg. Descripción Valores Precio
FDS8672S
DISTI # V79:2366_18815742		ON SemiconductorTrans MOSFET N-CH 30V 18A 8-Pin SOIC T/R17250
  • 2500:$0.6183
  • 1000:$0.6720
  • 500:$0.8053
  • 100:$0.9129
  • 10:$1.1092
  • 1:$1.2446
FDS8672S
DISTI # V72:2272_06300891		ON SemiconductorTrans MOSFET N-CH 30V 18A 8-Pin SOIC T/R1251
  • 1000:$0.7223
  • 500:$0.8586
  • 250:$1.0152
  • 100:$1.0162
  • 25:$1.2896
  • 10:$1.2915
  • 1:$1.4908
FDS8672S
DISTI # FDS8672SCT-ND		ON SemiconductorMOSFET N-CH 30V 18A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11299In Stock
  • 1000:$0.8124
  • 500:$0.9805
  • 100:$1.2606
  • 10:$1.5690
  • 1:$1.7400
FDS8672S
DISTI # FDS8672SDKR-ND		ON SemiconductorMOSFET N-CH 30V 18A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11299In Stock
  • 1000:$0.8124
  • 500:$0.9805
  • 100:$1.2606
  • 10:$1.5690
  • 1:$1.7400
FDS8672S
DISTI # FDS8672STR-ND		ON SemiconductorMOSFET N-CH 30V 18A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		7500In Stock
  • 2500:$0.7615
FDS8672S
DISTI # 26122719		ON SemiconductorTrans MOSFET N-CH 30V 18A 8-Pin SOIC T/R17250
  • 2500:$0.6183
  • 1000:$0.6720
  • 500:$0.8053
  • 100:$0.9129
  • 12:$1.1092
FDS8672S
DISTI # 25743487		ON SemiconductorTrans MOSFET N-CH 30V 18A 8-Pin SOIC T/R1251
  • 1000:$0.7223
  • 500:$0.8586
  • 250:$1.0152
  • 100:$1.0162
  • 25:$1.2896
  • 12:$1.2915
FDS8672S
DISTI # 24584354		ON SemiconductorTrans MOSFET N-CH 30V 18A 8-Pin SOIC T/R1019
  • 101:$0.6250
FDS8672S
DISTI # FDS8672S		ON SemiconductorTrans MOSFET N-CH 30V 18A 8-Pin SOIC N T/R (Alt: FDS8672S)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€1.1329
  • 5000:€0.8809
  • 10000:€0.7309
  • 15000:€0.6169
  • 25000:€0.5709
FDS8672S
DISTI # FDS8672S		ON SemiconductorTrans MOSFET N-CH 30V 18A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS8672S)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.5929
  • 5000:$0.5919
  • 10000:$0.5729
  • 15000:$0.5719
  • 25000:$0.5699
FDS8672S
DISTI # FDS8672S		ON SemiconductorTrans MOSFET N-CH 30V 18A 8-Pin SOIC N T/R (Alt: FDS8672S)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 2500:$0.5688
  • 5000:$0.5470
  • 7500:$0.5267
  • 12500:$0.5079
  • 25000:$0.4904
  • 62500:$0.4740
  • 125000:$0.4663
FDS8672S
DISTI # 84W8872		ON SemiconductorTrans MOSFET N-CH 30V 18A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 84W8872)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.9400
FDS8672S
DISTI # 08N9305		ON SemiconductorMOSFET Transistor, N Channel, 18 A, 30 V, 0.0038 ohm, 10 V, 2.1 V , RoHS Compliant: Yes0
  • 1:$0.6480
  • 2500:$0.6430
  • 10000:$0.6190
  • 25000:$0.5990
FDS8672S
DISTI # 84W8872		ON SemiconductorMOSFET, N CHANNEL, 30V, 0.0038OHM, 18A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V , RoHS Compliant: Yes1019
  • 1:$0.5000
  • 10:$0.5000
  • 25:$0.5000
  • 50:$0.5000
  • 100:$0.5000
  • 250:$0.5000
  • 500:$0.5000
  • 1000:$0.5000
FDS8672SFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		376637
  • 1000:$1.0600
  • 500:$1.1200
  • 100:$1.1600
  • 25:$1.2100
  • 1:$1.3000
FDS8672S
DISTI # 512-FDS8672S		ON SemiconductorMOSFET 30V N-Channel PowerTrench
RoHS: Compliant		3735
  • 1:$1.6300
  • 10:$1.3900
  • 100:$1.0700
  • 500:$0.9400
  • 1000:$0.7420
  • 2500:$0.6580
  • 10000:$0.6340
FDS8672S
DISTI # C1S226600427384		ON SemiconductorTrans MOSFET N-CH 30V 18A 8-Pin SOIC N T/R
RoHS: Compliant		1251
  • 250:$1.0152
  • 100:$1.0162
  • 25:$1.2896
  • 10:$1.2916
FDS8672S
DISTI # C1S541901585406		ON SemiconductorMOSFETs17250
  • 1000:$0.6720
  • 500:$0.8053
  • 100:$0.9129
  • 10:$1.1092
FDS8672S
DISTI # 2322615		ON SemiconductorMOSFET, N CH, 30V, 18A, SOIC-8
RoHS: Compliant		2948
  • 1:$2.5900
  • 10:$2.2000
  • 100:$1.7000
  • 500:$1.5000
  • 1000:$1.1800
  • 2500:$1.0500
  • 10000:$1.0100
FDS8672S
DISTI # 2322615		ON SemiconductorMOSFET, N CH, 30V, 18A, SOIC-8
RoHS: Compliant		2953
  • 5:£1.4100
  • 25:£0.9940
  • 100:£0.7590
  • 250:£0.6840
  • 500:£0.6000
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Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de FDS8672S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,62 US$
1,62 US$
10
1,38 US$
13,80 US$
100
1,06 US$
106,00 US$
500
0,94 US$
470,00 US$
1000
0,74 US$
742,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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