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APT44GA60BD30

APT44GA60BD30
Mfr. #:
APT44GA60BD30
Fabricante:
Microchip / Microsemi
Descripción:
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APT44GA60BD30 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT44GA60BD30 DatasheetAPT44GA60BD30 Datasheet (P4-P6)APT44GA60BD30 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Embalaje:
Tubo
Marca:
Microchip / Microsemi
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Tags
APT44G, APT44, APT4, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 600V 78A 3-Pin(3+Tab) TO-247
***rochip
IGBT PT MOS 8 Combi 600 V 44 A TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-247
***ernational Rectifier
600V UltraFast Copack Trench IGBT in a TO-247AC package for apliance motion applications
***p One Stop
Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRGP4063DPbF Series 600 V 48 A N-Channel UltraFast IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.14 V Current release time: 35 ns Power dissipation: 330 W
***ark
Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:600V; Continuous Collector Current, Ic:96A; Collector Emitter Saturation Voltage, Vce(sat):2.14V; Power Dissipation, Pd:330W ;RoHS Compliant: Yes
***p One Stop Global
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***eco
Transistor IGBT Chip N Channel 600 Volt 55 Amp 3-Pin 3+ Tab TO-247AA
***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.3 V Current release time: 62 ns Power dissipation: 200 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:55A; Collector Emitter Saturation Voltage, Vce(sat):2.3V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***nell
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.3V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ment14 APAC
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50W; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:33ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
IRG4PC50FPBF, IGBT Transistor, 70 A 600V, 3-Pin TO-247AC
***ure Electronics
IRG4PC50 Series 600 V 39 A N-Channel Fast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.6 V Current release time: 230 ns Power dissipation: 200 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time Max:130ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:280A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
New short circuit rugged "K" series
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***(Formerly Allied Electronics)
IGBT N-Channel 30A 600V TO-247
***ark
Igbt, Single, 600V, 60A, To-247-3; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2.1V; Power Dissipation Pd:200W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***DA Technology Co., Ltd.
Product Description Demo for Development.
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
***ical
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 1.55V; Transistor Case Style: TO-247; No. of Pins
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 60 A high speed
***nell
IGBT, 600V, 80A, 175DEG C, 375W; Available until stocks are exhausted Alternative available
***ical
Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
Imagen Parte # Descripción
RJH65T46DPQ-A0#T0

Mfr.#: RJH65T46DPQ-A0#T0

OMO.#: OMO-RJH65T46DPQ-A0-T0

 IGBT Transistors IGBT - 650V/40A/TO-247A
APT38N60BC6

Mfr.#: APT38N60BC6

OMO.#: OMO-APT38N60BC6

 MOSFET FG, MOSFET, 600V, 38A, TO-247
CMF60100R00JKEA

Mfr.#: CMF60100R00JKEA

OMO.#: OMO-CMF60100R00JKEA

 Metal Film Resistors - Through Hole 1W 100ohms 5%
CC45SL3DD220JYNNA

Mfr.#: CC45SL3DD220JYNNA

OMO.#: OMO-CC45SL3DD220JYNNA

 Ceramic Disc Capacitors D: 5.5mm 2kV 22pF SL 5% LS:5mm
APT38N60BC6

Mfr.#: APT38N60BC6

OMO.#: OMO-APT38N60BC6-MICROSEMI

 Darlington Transistors MOSFET
CC45SL3DD220JYNNA

Mfr.#: CC45SL3DD220JYNNA

OMO.#: OMO-CC45SL3DD220JYNNA-TDK

 Ceramic Disc Capacitors CC45 22pF 2.0KV SL 5% Cut Leads
CMF60100R00JKEA

Mfr.#: CMF60100R00JKEA

OMO.#: OMO-CMF60100R00JKEA-VISHAY-DALE

 Metal Film Resistors - Through Hole 1/2W 1W 100ohms 5%
B32654A0474K000

Mfr.#: B32654A0474K000

OMO.#: OMO-B32654A0474K000-EPCOS

 CAP, 0.47F, 1 KV, 10%, PP
Disponibilidad
Valores:
61
En orden:
2044
Ingrese la cantidad:
El precio actual de APT44GA60BD30 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
8,30 US$
8,30 US$
10
7,47 US$
74,70 US$
25
6,80 US$
170,00 US$
100
6,14 US$
614,00 US$
250
5,60 US$
1 400,00 US$
500
5,11 US$
2 555,00 US$
1000
4,46 US$
4 460,00 US$
2500
4,10 US$
10 250,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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