IPB083N10N3GATMA1

Mfr. #:: IPB083N10N3GATMA1
Fabricante:: Infineon Technologies
Descripción:: MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPB083N10N3GATMA1 Ficha de datos
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Valor de atributo

Fabricante:: Infineon

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: TO-263-3

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 100 V

Id - Corriente de drenaje continua:: 80 A

Rds On - Resistencia de la fuente de drenaje:: 7.2 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 2 V

Vgs - Voltaje puerta-fuente:: 20 V

Qg - Carga de puerta:: 55 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 175 C

Pd - Disipación de energía:: 125 W

Configuración:: Único

Modo de canal:: Mejora

Nombre comercial:: OptiMOS

Embalaje:: Carrete

Altura:: 4.4 mm

Longitud:: 10 mm

Serie:: OptiMOS 3

Tipo de transistor:: 1 N-Channel

Ancho:: 9.25 mm

Marca:: Infineon Technologies

Transconductancia directa - Mín .:: 45 S

Otoño:: 8 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 42 ns

Cantidad de paquete de fábrica:: 1000

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 31 ns

Tiempo típico de retardo de encendido:: 18 ns

Parte # Alias:: G IPB083N10N3 IPB83N1N3GXT SP000458812

Unidad de peso:: 0.068654 oz

Tags: IPB083N10N3G, IPB083N10, IPB083, IPB08, IPB0, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

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IPB083N10N3GATMA1 Descripción

***ure Electronics: Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS

***nell: MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***et: Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) TO-263

***el Electronic: Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

***ment14 APAC: MOSFET, N CH, 70A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ure Electronics: Single N-Channel 80 V 5.4 mOhm 52 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N CH, 80A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Current Id Max:80A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

***p One Stop Global: Trans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 1.1pF 100volts C0G +/-0.25pF

***ment14 APAC: MOSFET, N-CH, 75V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:75V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 80A I(D), 75V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 75V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 150W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)

***ineon: The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers

***emi: N-Channel PowerTrench® MOSFET, 40V, 70A, 9mΩ

***ure Electronics: N-Channel 40 V 9 mOhm Surface Mount PowerTrench Mosfet - TO-263AB

***r Electronics: Power Field-Effect Transistor, 70A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:92W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:92W; Power Dissipation Pd:92W; SMD Marking:FDB8445; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

*** Source Electronics: Trans MOSFET P-CH 100V 33.5A 3-Pin(2+Tab) D2PAK T/R / MOSFET P-CH 100V 33.5A D2PAK

***ure Electronics: P-Channel 100 V 0.06 Ohm Surface Mount Mosfet - D2PAK-3

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33.5mA; On Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

***rchild Semiconductor: This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ark: MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:55A; Resistance, Rds On:0.026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination ;RoHS Compliant: No

***nell: MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 155W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 55A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation on 1" Sq. PCB: 3.75W; Pulse Current Idm: 220A; SMD Marking: FQB55N10; Termination Type: Surface Mount Device; Voltage Vds: 100V; Voltage Vds Typ: 100V; Voltage Vgs Max: 25V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPB083N10N3GATMA1 DISTI # V72:2272_06383633	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB083N10N3GATMA1 DISTI # V36:1790_06383633	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$0.5242 500000:$0.5246 100000:$0.5797 10000:$0.6897 1000:$0.7088
IPB083N10N3GATMA1 DISTI # IPB083N10N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	10000:$0.6048 5000:$0.6284 2000:$0.6615 1000:$0.7087
IPB083N10N3GATMA1 DISTI # IPB083N10N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2000In Stock	500:$0.9247 100:$1.1194 10:$1.4360 1:$1.6100
IPB083N10N3GATMA1 DISTI # IPB083N10N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2000In Stock	500:$0.9247 100:$1.1194 10:$1.4360 1:$1.6100
IPB083N10N3GXT DISTI # IPB083N10N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB083N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.4569 6000:$0.4649 4000:$0.4809 2000:$0.4999 1000:$0.5179
IPB083N10N3GATMA1 DISTI # 47Y8048	Infineon Technologies AG	MOSFET Transistor, N Channel, 80 A, 100 V, 0.0072 ohm, 10 V, 2.7 V RoHS Compliant: Yes	758	500:$0.8650 250:$0.9210 100:$0.9780 50:$1.0800 25:$1.1700 10:$1.2700 1:$1.4800
IPB083N10N3 G DISTI # 726-IPB083N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 RoHS: Compliant	13901	1:$1.4700 10:$1.2600 100:$0.9680 500:$0.8560 1000:$0.6750 2000:$0.5990 10000:$0.5770
IPB083N10N3GATMA1 DISTI # 726-IPB083N10N3GATMA	Infineon Technologies AG	MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 RoHS: Compliant	2169	1:$1.4700 10:$1.2600 100:$0.9680 500:$0.8560 1000:$0.6750 2000:$0.5990 10000:$0.5770
IPB083N10N3GATMA1 DISTI # 8977361P	Infineon Technologies AG	MOSFET N-CHANNEL 100V 80A OPTIMOS TO263, RL	3216	2000:£0.4840 800:£0.6140 400:£0.6940 80:£0.9000
IPB083N10N3GATMA1 DISTI # IPB083N10N3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO263-3	664	500:$0.6081 100:$0.6306 25:$0.6757 5:$0.7523 1:$0.8514
IPB083N10N3GATMA1 DISTI # 2443432	Infineon Technologies AG	MOSFET, N CH, 100V, 80A, TO-263-3	739	500:£0.6670 250:£0.7100 100:£0.7530 10:£1.0300 1:£1.3100
IPB083N10N3GATMA1 DISTI # 2443432	Infineon Technologies AG	MOSFET, N CH, 100V, 80A, TO-263-3 RoHS: Compliant	758	1000:$1.0200 500:$1.2900 100:$1.4600 10:$1.9000 1:$2.2200

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Disponibilidad

Valores:: Available
En orden:: 1985
Ingrese la cantidad:

El precio actual de IPB083N10N3GATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,47 US$~~; ~~1,47 US$~~

10: ~~1,26 US$~~; ~~12,60 US$~~

100: ~~0,97 US$~~; ~~96,80 US$~~

500: ~~0,86 US$~~; ~~428,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IPB083N10N3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes