IXTX550N055T2

IXTX550N055T2
Mfr. #:
IXTX550N055T2
Fabricante:
Littelfuse
Descripción:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTX550N055T2 Ficha de datos
Entrega:
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ECAD Model:
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IXTX550N055T2 más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
PMIC - Controladores de puerta
Tags
IXTX, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 55V 550A PLUS247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Parte # Mfg. Descripción Valores Precio
IXTX550N055T2
DISTI # IXTX550N055T2-ND
IXYS CorporationMOSFET N-CH 55V 550A PLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$16.1173
IXTX550N055T2
DISTI # 747-IXTX550N055T2
IXYS CorporationGate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant
0
  • 1:$19.8000
  • 10:$17.8100
  • 25:$16.2400
  • 50:$15.0500
  • 100:$14.6300
  • 250:$13.4700
  • 500:$12.2800
Imagen Parte # Descripción
IXTX550N055T2

Mfr.#: IXTX550N055T2

OMO.#: OMO-IXTX550N055T2

MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
IXTX550N055T2

Mfr.#: IXTX550N055T2

OMO.#: OMO-IXTX550N055T2-IXYS-CORPORATION

Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de IXTX550N055T2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
18,42 US$
18,42 US$
10
17,50 US$
174,99 US$
100
16,58 US$
1 657,80 US$
500
15,66 US$
7 828,50 US$
1000
14,74 US$
14 736,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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