2SC5773JR-TL-E

2SC5773JR-TL-E
Mfr. #:
2SC5773JR-TL-E
Fabricante:
Rochester Electronics, LLC
Descripción:
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
2SC5773JR-TL-E Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
RENESAS
categoria de producto
Chips de IC
Tags
2SC577, 2SC57, 2SC5, 2SC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S.I.T. Europe - USA - Asia
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
***p One Stop Global
Trans GP BJT NPN 6V 0.08A 3-Pin MPAK T/R
***ponent Stockers
UHF BAND Si NPN RF SMALL SIGNAL TRANSISTOR
***i-Key
SMALL SIGNAL BIPOLAR TRANSTR NPN
***egrated Device Technology
Small Signal Bip-TRSs for High Frequency Amplifier
Parte # Mfg. Descripción Valores Precio
2SC5773JR(TL-E)
DISTI # C1S620200184030
Renesas Electronics Corporation 
RoHS: Compliant
2800
  • 1000:$2.0200
  • 500:$2.0700
  • 100:$2.4800
  • 50:$2.5900
2SC5773JR-TL-ERenesas Electronics CorporationRF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
RoHS: Compliant
1400
  • 1000:$0.1300
  • 100:$0.1400
  • 500:$0.1400
  • 25:$0.1500
  • 1:$0.1600
2SC5773JRTLERenesas Electronics CorporationRF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
RoHS: Compliant
Europe - 12000
    Imagen Parte # Descripción
    2SC5773JR

    Mfr.#: 2SC5773JR

    OMO.#: OMO-2SC5773JR-1190

    Nuevo y original
    2SC5773JR-TL-E

    Mfr.#: 2SC5773JR-TL-E

    OMO.#: OMO-2SC5773JR-TL-E-1152

    RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de 2SC5773JR-TL-E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,20 US$
    0,20 US$
    10
    0,19 US$
    1,85 US$
    100
    0,18 US$
    17,55 US$
    500
    0,17 US$
    82,90 US$
    1000
    0,16 US$
    156,00 US$
    Empezar con
    Nuevos productos
    • IO-Link™ Devices
      Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
    • Large Diameter Clear Hole Spacers
      RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
    • WE-ExB Series Common Mode Power Line Choke
      Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
    • CPI2-B1-REU Production Device Programmer
      Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
    • CFSH05-20L Schottky Diode
      Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
    Top