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IDW10G65C5XKSA1

IDW10G65C5XKSA1
Mfr. #:
IDW10G65C5XKSA1
Fabricante:
Infineon Technologies
Descripción:
Schottky Diodes & Rectifiers SIC DIODES
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IDW10G65C5XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IDW10G65C5XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Diodos y rectificadores Schottky
RoHS:
Y
Producto:
Diodos de carburo de silicio Schottky
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Si - Corriente directa:
10 A
Vrrm - Voltaje inverso repetitivo:
650 V
Vf - Voltaje directo:
1.5 V
Ifsm - Corriente de sobretensión directa:
58 A
Configuración:
Único
Tecnología:
Sic
Ir - Corriente inversa:
0.5 uA
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
CoolSiC
Embalaje:
Tubo
Marca:
Infineon Technologies
Pd - Disipación de energía:
65 W
Tipo de producto:
Diodos y rectificadores Schottky
Cantidad de paquete de fábrica:
240
Subcategoría:
Diodes & Rectifiers
Nombre comercial:
CoolSiC
Vr - Voltaje inverso:
650 V
Parte # Alias:
IDW10G65C5 SP001633164
Unidad de peso:
0.211644 oz
Tags
IDW10G6, IDW10G, IDW10, IDW1, IDW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***
Diode Silicon Carbide Schottky 65 V 1A (DC) Through Hole PG-TO247-3-41
***ow.cn
Diode Schottky SiC 650V 10A 3-Pin(3+Tab) TO-247 Tube
***i-Key
DIODE SIL CARB 650V 10A TO247-3
*** Electronic Components
Schottky Diodes & Rectifiers SIC DIODES
***ineon SCT
CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes, PG-TO247-3, RoHS
***ineon
CoolSiC generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The new CoolSiC Generation 5 has been designed to complement our 650V CoolMOS families: this ensures meeting the most stringent application requirements in this voltage range. | Summary of Features: V br at 650V; Improved figure of merit (Q c x V f); No reverse recovery charge; Soft switching reverse recovery waveform; Temperature independent switching behavior; High operating temperature (T j max 175C); Improved surge capability; Pb-free lead plating | Benefits: Higher safety margin against overvoltage and complements CoolMOS offer; Improved efficiency over all load conditions; Increased efficiency compared to Silicon Diode alternatives; Reduced EMI compared to snappier Silicon diode reverse recovery waveform; Highly stable switching performance; Reduced cooling requirements; Reduced risks of thermal runaway; RoHS compliant; Very high quality and high volume manufacturing capability | Target Applications: Telecom/server SMPS; Solar; UPS; PC power; LED/LCD TV; Motor drives; HID lighting
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Parte # Mfg. Descripción Valores Precio
IDW10G65C5XKSA1
DISTI # V36:1790_17076625		Infineon Technologies AG650V SiC Schottky Diode0
  • 240000:$2.2940
  • 120000:$2.2990
  • 24000:$3.0800
  • 2400:$4.7200
  • 240:$5.0100
IDW10G65C5XKSA1
DISTI # IDW10G65C5XKSA1-ND		Infineon Technologies AGDIODE SCHOTTKY 650V 10A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		480In Stock
  • 2640:$2.5172
  • 720:$3.1417
  • 240:$3.6906
  • 25:$4.2584
  • 10:$4.5040
  • 1:$5.0200
IDW10G65C5XKSA1
DISTI # SP001633164		Infineon Technologies AGSIC DIODES (Alt: SP001633164)
RoHS: Compliant
Min Qty: 1		Europe - 1127
  • 1000:€2.0900
  • 500:€2.1900
  • 100:€2.2900
  • 50:€2.3900
  • 25:€2.4900
  • 10:€2.5900
  • 1:€2.7900
IDW10G65C5XKSA1
DISTI # IDW10G65C5XKSA1		Infineon Technologies AGSIC DIODES - Rail/Tube (Alt: IDW10G65C5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$2.3900
  • 2400:$2.3900
  • 960:$2.4900
  • 480:$2.5900
  • 240:$2.6900
IDW10G65C5XKSA1
DISTI # 726-IDW10G65C5XKSA1		Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
RoHS: Compliant		445
  • 1:$5.0100
  • 10:$4.2500
  • 100:$3.6900
  • 250:$3.5000
  • 500:$3.1400
IDW10G65C5XKSA1
DISTI # XSKDRABV0030553		Infineon Technologies AG 
RoHS: Compliant		467 in Stock0 on Order
  • 467:$3.3200
  • 240:$3.5500
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Disponibilidad
Valores:
445
En orden:
2428
Ingrese la cantidad:
El precio actual de IDW10G65C5XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,01 US$
5,01 US$
10
4,25 US$
42,50 US$
100
3,69 US$
369,00 US$
250
3,50 US$
875,00 US$
500
3,14 US$
1 570,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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