IRFU110PBF

Mfr. #:: IRFU110PBF
Fabricante:: Vishay / Siliconix
Descripción:: MOSFET N-CH 100V HEXFET MOSFET I-PAK
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IRFU110PBF Ficha de datos
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Atributo del producto
Valor de atributo

Fabricante:: Vishay

Categoria de producto:: MOSFET

RoHS:: E

Tecnología:: Si

Estilo de montaje:: A través del orificio

Paquete / Caja:: TO-251-3

Embalaje:: Tubo

Altura:: 6.22 mm

Longitud:: 6.73 mm

Serie:: IRFR / U

Ancho:: 2.39 mm

Marca:: Vishay / Siliconix

Tipo de producto:: MOSFET

Cantidad de paquete de fábrica:: 75

Subcategoría:: MOSFET

Unidad de peso:: 0.011640 oz

Tags: IRFU11, IRFU1, IRFU, IRF

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFU110PBF Descripción

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - IPAK (TO-251)

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***nell: MOSFET, N-CH, 100V, 4.3A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.3A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 25W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Operating Temperature Min: -55°C

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W

***ure Electronics: Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: N Channel Mosfet, 100V, 9.4A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48

***ment14 APAC: MOSFET, N, 100V, 9.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:9.4A; Current Temperature:25°C; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:38A; Rise Time:23ns; SMD Marking:IRFU120N; Termination Type:Through Hole; Turn Off Time:32ns; Turn On Time:4.5ns; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 100 V 39 mOhm 37 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 100V, 31A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:100V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:31A; Junction to Case Thermal Resistance A:1.4°C/W; On State resistance @ Vgs = 10V:39ohm; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:125A; Termination Type:Through Hole; Turn Off Time:13ns; Turn On Time:27ns; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251)

***ark: N Channel Mosfet, 100V, 7.7A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.7A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No

*** Stop Electro: Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ure Electronics: Single N-Channel 100 V 115 mOhm 29.3 nC HEXFET® Power Mosfet - IPAK

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; On Resistance Rds(On):0.115Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 16 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 115 / Gate-Source Voltage V = 20 / Fall Time ns = 25 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 6.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 79

***ment14 APAC: MOSFET, N, 100V, 15A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):115mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:79W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:16A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.4°C/W; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:60A; SMD Marking:IRFU3910; Termination Type:Through Hole; Turn Off Time:25ns; Turn On Time:27ns; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single P-Channel 100 V 1.2 Ohms Through Hole Power Mosfet - IPAK (TO-251)

***el Electronic: NXP MC33901WEF CAN Bus, Transceiver, CAN, 1, 1, 4.5 V, 5.5 V, NSOIC

***ical: Trans MOSFET P-CH 100V 3.1A 3-Pin(3+Tab) IPAK

***enic: 100V 3.1A 1.2¦¸@10V,1.9A 25W 4V@250¦ÌA P Channel TO-251(I-PAK) MOSFETs ROHS

***ark: MOSFET, P-CH, 100V, 3.1A, TO-251 ROHS COMPLIANT: YES

***ure Electronics: Single P-Channel 100 V 0.6 Ohms Through Hole Power Mosfet - IPAK (TO-251)

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-5.6A; On Resistance, Rds(on):600mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, P, -100V, -5.6A, I-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:5.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:-5.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:25A; Termination Type:Through Hole; Turn Off Time:25ns; Turn On Time:29ns; Voltage Vds Typ:-100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IRFU110PBF DISTI # V99:2348_09218435	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.3A 3-Pin(3+Tab) IPAK RoHS: Compliant	421	500:$0.5319 100:$0.5812 10:$0.8416 1:$1.0172
IRFU110PBF DISTI # V36:1790_09218435	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.3A 3-Pin(3+Tab) IPAK RoHS: Compliant	0	3000000:$0.5454 1500000:$0.5455 300000:$0.5528 30000:$0.5633 3000:$0.5650
IRFU110PBF DISTI # IRFU110PBF-ND	Vishay Siliconix	MOSFET N-CH 100V 4.3A I-PAK RoHS: Compliant Min Qty: 1 Container: Tube	2432In Stock	5025:$0.3895 2550:$0.4100 525:$0.5564 150:$0.6735 75:$0.8200 10:$0.8640 1:$0.9700
IRFU110PBF DISTI # 32443280	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.3A 3-Pin(3+Tab) IPAK RoHS: Compliant	25225	54:$0.1856
IRFU110PBF DISTI # 25872619	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.3A 3-Pin(3+Tab) IPAK RoHS: Compliant	421	13:$1.0172
IRFU110PBF DISTI # IRFU110PBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.3A 3-Pin(3+Tab) IPAK (Alt: IRFU110PBF) RoHS: Compliant Min Qty: 1	Europe - 70	1000:€0.2249 500:€0.2289 100:€0.2329 50:€0.2419 25:€0.2619 10:€0.3039 1:€0.4459
IRFU110PBF DISTI # IRFU110PBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.3A 3-Pin(3+Tab) IPAK - Tape and Reel (Alt: IRFU110PBF) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2989 18000:$0.3069 12000:$0.3159 6000:$0.3289 3000:$0.3389
IRFU110PBF DISTI # IRFU110PBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.3A 3-Pin(3+Tab) IPAK (Alt: IRFU110PBF) RoHS: Compliant Min Qty: 3000	Asia - 0
IRFU110PBF DISTI # 63J7045	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 4.3A, IPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	0	1000:$0.4650 500:$0.5880 100:$0.7590 50:$0.7950 25:$0.8310 10:$0.8680 1:$1.0800
IRFU110PBF DISTI # R1084561	Vishay Dale	TRANSITOR,IRFU110PBF RoHS: Compliant	0	10:$0.8300 50:$0.6800 100:$0.6300 250:$0.5700 500:$0.5400
IRFU110PBF DISTI # 70459495	Vishay Siliconix	IRFU110PBF N-channel MOSFET Transistor,4.3 A,100 V,3-Pin IPAK RoHS: Compliant	0	3000:$0.8500
IRFU110PBF DISTI # 844-IRFU110PBF	Vishay Intertechnologies	MOSFET N-CH100V HEXFET MOSFET I-PAK RoHS: Compliant	3792	1:$0.9300 10:$0.7680 100:$0.5890 500:$0.5060 1000:$0.4000 2500:$0.3730 5000:$0.3540 10000:$0.3410
IRFU110PBF DISTI # 7084831	Vishay Intertechnologies	MOSFET N-CHANNEL 100V 4.3A IPAK, PK	435	500:£0.3670 250:£0.3970 100:£0.4350 50:£0.5040 10:£0.5960
IRFU110PBF DISTI # IRFU110PBF	Vishay Intertechnologies	Transistor: N-MOSFET,unipolar,100V,2.7A,25W,IPAK	99	300:$0.2737 75:$0.2838 25:$0.3108 5:$0.3581 1:$0.6183
IRFU110PBF	Vishay Intertechnologies	RoHS: Compliant	1025
IRFU110PBF	Vishay Intertechnologies	MOSFET N-CH100V HEXFET MOSFET I-PAK RoHS: Compliant	Americas - 3750	75:$0.5200 150:$0.4600 300:$0.4260 750:$0.4130 1500:$0.3740

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Disponibilidad

Valores:: Available
En orden:: 1985
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IRFU110PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes