SI7117DN-T1-GE3

SI7117DN-T1-GE3
Mfr. #:
SI7117DN-T1-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 150V 2.17A 12.5W 1.2ohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7117DN-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
Serie
SI71xxDx
embalaje
Carrete
Alias ​​de parte
SI7117DN-GE3
Estilo de montaje
SMD / SMT
Paquete-Estuche
PowerPAK-1212-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 P-Channel
Disipación de potencia Pd
3.2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
1.1 A
Vds-Drain-Source-Breakdown-Voltage
- 150 V
Resistencia a la fuente de desagüe de Rds
1.2 Ohms
Polaridad del transistor
P-Channel
Tags
SI7117, SI711, SI71, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI7117DN-T1-GE3 P-channel MOSFET Transistor; 1.7 A; 150 V; 8-Pin PowerPAK 1212
***ical
Trans MOSFET P-CH 150V 1.1A 8-Pin PowerPAK 1212 T/R
***ure Electronics
-150V,2.17A,1200Mohm RdsOn@10V,7.7nCQg,PPAK 1212-8
Parte # Mfg. Descripción Valores Precio
SI7117DN-T1-GE3
DISTI # SI7117DN-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 150V 2.17A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2921In Stock
  • 1000:$0.6458
  • 500:$0.8180
  • 100:$1.0548
  • 10:$1.3350
  • 1:$1.5100
SI7117DN-T1-GE3
DISTI # SI7117DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 150V 2.17A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2921In Stock
  • 1000:$0.6458
  • 500:$0.8180
  • 100:$1.0548
  • 10:$1.3350
  • 1:$1.5100
SI7117DN-T1-GE3
DISTI # SI7117DN-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 150V 2.17A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.5852
SI7117DN-T1-GE3
DISTI # SI7117DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 150V 1.1A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7117DN-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.5529
  • 6000:$0.5359
  • 12000:$0.5139
  • 18000:$0.4999
  • 30000:$0.4869
SI7117DN-T1-GE3
DISTI # SI7117DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 150V 1.1A 8-Pin PowerPAK 1212 T/R (Alt: SI7117DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SI7117DN-T1-GE3
    DISTI # 70616999
    Vishay SiliconixSI7117DN-T1-GE3 P-channel MOSFET Transistor,1.7 A,150 V,8-Pin PowerPAK 1212
    RoHS: Compliant
    0
    • 300:$0.8500
    • 600:$0.7200
    • 1500:$0.7000
    • 3000:$0.6600
    SI7117DN-T1-GE3
    DISTI # 781-SI7117DN-GE3
    Vishay IntertechnologiesMOSFET -150V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant
    2130
    • 1:$1.3300
    • 10:$1.1000
    • 100:$0.8400
    • 500:$0.7230
    • 1000:$0.5700
    • 3000:$0.5320
    SI7117DN-T1-GE3
    DISTI # 8181387P
    Vishay IntertechnologiesTRANS MOSFET P-CH 150V 1.1AN, RL2100
    • 100:£0.6300
    • 200:£0.5990
    SI7117DNT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 1.1A I(D), 150V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant
    Europe - 3000
      SI7117DN-T1-GE3Vishay IntertechnologiesMOSFET -150V Vds 20V Vgs PowerPAK 1212-8Americas -
        Imagen Parte # Descripción
        SI7117DN-T1-E3

        Mfr.#: SI7117DN-T1-E3

        OMO.#: OMO-SI7117DN-T1-E3

        MOSFET -150V Vds 20V Vgs PowerPAK 1212-8
        SI7117DN-T1-GE3

        Mfr.#: SI7117DN-T1-GE3

        OMO.#: OMO-SI7117DN-T1-GE3

        MOSFET -150V Vds 20V Vgs PowerPAK 1212-8
        SI7117DN-T1-GE3

        Mfr.#: SI7117DN-T1-GE3

        OMO.#: OMO-SI7117DN-T1-GE3-VISHAY

        RF Bipolar Transistors MOSFET 150V 2.17A 12.5W 1.2ohm @ 10V
        SI7117DN

        Mfr.#: SI7117DN

        OMO.#: OMO-SI7117DN-1190

        Nuevo y original
        SI7117DN-T1-E3

        Mfr.#: SI7117DN-T1-E3

        OMO.#: OMO-SI7117DN-T1-E3-VISHAY

        MOSFET P-CH 150V 2.17A 1212-8
        Disponibilidad
        Valores:
        Available
        En orden:
        3500
        Ingrese la cantidad:
        El precio actual de SI7117DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,73 US$
        0,73 US$
        10
        0,69 US$
        6,94 US$
        100
        0,66 US$
        65,73 US$
        500
        0,62 US$
        310,40 US$
        1000
        0,58 US$
        584,30 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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