MRF6VP2600HR5

MRF6VP2600HR5
Mfr. #:
MRF6VP2600HR5
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors VHV6 600W 225MHZ NI1230
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MRF6VP2600HR5 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
Si
Vds - Voltaje de ruptura de drenaje-fuente:
110 V
Ganar:
25.3 dB
Potencia de salida:
600 W
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
NI-1230
Embalaje:
Carrete
Configuración:
Doble
Altura:
5.08 mm
Longitud:
41.28 mm
Frecuencia de operación:
500 MHz
Serie:
MRF6VP2600H
Escribe:
RF Power MOSFET
Ancho:
10.29 mm
Marca:
NXP / Freescale
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
10 V
Vgs th - Voltaje umbral puerta-fuente:
3 V
Parte # Alias:
935319433178
Unidad de peso:
0.464036 oz
Tags
MRF6VP26, MRF6VP2, MRF6VP, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,2 to 500 MHz, 600 W, Typ Gain in dB is 25 @ 225 MHz, 50 V, LDMOS, SOT1787
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 2-500 MHz, 600 W, 50 V, CFM4F, RoHS
***ure Electronics
N-Channel 110 V 125 W Enhancement Mode Lateral Mosfet - NI-1230
***ark
Transistor; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:0.00009A; RF Transistor Case:375D; Gain:25dB; Gate-Source Voltage:10V; Operating Frequency Max:225MHz; Output Power, Pout:600W
***nell
RF FET, 110V, 500MHZ-2MHZ, CASE 375D; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 500MHz; Operating Frequency Max: 2MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRF6VP2600H Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
Parte # Mfg. Descripción Valores Precio
MRF6VP2600HR5
DISTI # V72:2272_07204071
NXP SemiconductorsTrans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
RoHS: Compliant
23
  • 75000:$247.2100
  • 30000:$248.5500
  • 15000:$249.8900
  • 6000:$252.6100
  • 3000:$255.3400
  • 1000:$258.0600
  • 500:$260.7900
  • 250:$266.2500
  • 100:$270.6400
  • 50:$272.2500
  • 25:$276.3800
  • 10:$282.2900
  • 1:$290.7300
MRF6VP2600HR5
DISTI # MRF6VP2600HR5TR-ND
NXP SemiconductorsFET RF 2CH 110V 225MHZ NI-1230
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)
50In Stock
  • 50:$285.9014
MRF6VP2600HR5
DISTI # MRF6VP2600HR5CT-ND
NXP SemiconductorsFET RF 2CH 110V 225MHZ NI-1230
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2In Stock
  • 1:$314.4100
MRF6VP2600HR5
DISTI # MRF6VP2600HR5DKR-ND
NXP SemiconductorsFET RF 2CH 110V 225MHZ NI-1230
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Limited Supply - Call
    MRF6VP2600HR5
    DISTI # 25767377
    NXP SemiconductorsTrans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
    RoHS: Compliant
    23
    • 10:$282.2900
    • 1:$290.7300
    MRF6VP2600HR5
    DISTI # MRF6VP2600HR5
    Avnet, Inc.Trans MOSFET N-CH 110V 5-Pin NI-1230 T/R - Tape and Reel (Alt: MRF6VP2600HR5)
    RoHS: Compliant
    Min Qty: 50
    Container: Reel
    Americas - 150
      MRF6VP2600HR5
      DISTI # 95M9593
      NXP SemiconductorsRF MOSFET, N CHANNEL, 110V, 375D-05, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:50µA,Power Dissipation Pd:-,Operating Frequency Min:2MHz,Operating Frequency Max:500MHz,RF Transistor Case:NI-1230,MSL:- RoHS Compliant: Yes0
        MRF6VP2600HR5
        DISTI # 61AC0768
        NXP SemiconductorsRF FET, 110V, 500MHZ-2MHZ, CASE 375D,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:500MHz,Operating Frequency Max:2MHz,RF Transistor Case:NI-1230,No. of Pins:4Pins,RoHS Compliant: Yes0
          MRF6VP2600HR5
          DISTI # 841-MRF6VP2600HR5
          NXP SemiconductorsRF MOSFET Transistors VHV6 600W 225MHZ NI1230
          RoHS: Compliant
          137
          • 1:$294.4700
          • 5:$289.9500
          • 10:$285.6300
          • 25:$279.4700
          • 50:$275.1800
          MRF6VP2600HR5Freescale SemiconductorRF Power Field-Effect Transistor
          RoHS: Compliant
          150
          • 1000:$282.8400
          • 500:$297.7300
          • 100:$309.9600
          • 25:$323.2500
          • 1:$348.1100
          MRF6VP2600HR5
          DISTI # MRF6VP2600HR5
          NXP SemiconductorsRF POWER TRANSISTOR
          RoHS: Compliant
          0
          • 50:$300.9500
          MRF6VP2600HR5
          DISTI # C1S233100269077
          NXP SemiconductorsTrans RF MOSFET N-CH 110V 5-Pin NI-1230 T/R
          RoHS: Compliant
          23
          • 10:$282.2900
          • 1:$290.7300
          MRF6VP2600HR5
          DISTI # 1806059
          NXP SemiconductorsRF MOSFET, N CHANNEL, 110V, 375D-05
          RoHS: Compliant
          0
          • 1:$465.9600
          • 5:$458.8000
          • 10:$451.9700
          • 25:$442.2200
          • 50:$435.4400
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          En orden:
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