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A3T21H400W23SR6

A3T21H400W23SR6
Mfr. #:
A3T21H400W23SR6
Fabricante:
NXP Semiconductors
Descripción:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 71 W Avg., 28 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A3T21H400W23SR6 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
A3T21H400W23SR6 más información A3T21H400W23SR6 Product Details
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N dual
Tecnología:
Si
Id - Corriente de drenaje continua:
3.2 A
Vds - Voltaje de ruptura de drenaje-fuente:
- 500 mV, 65 V
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
ACP-1230S-4
Embalaje:
Carrete
Frecuencia de operación:
2110 MHz to 2200 MHz
Serie:
A3T21H400W23
Escribe:
RF Power MOSFET
Marca:
Semiconductores NXP
Número de canales:
2 Channel
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
150
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 6 V, 10 V
Vgs th - Voltaje umbral puerta-fuente:
0.8 V, 1.4 V
Parte # Alias:
935372908128
Tags
A3T21H4, A3T21, A3T2, A3T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
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 FORECAST ACP1230S-4L2L
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
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