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MRFE6VP6300HSR5

MRFE6VP6300HSR5
Mfr. #:
MRFE6VP6300HSR5
Fabricante:
NXP Semiconductors
Descripción:
RF MOSFET Transistors VHV6 300W50VISM NI780S-4
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MRFE6VP6300HSR5 Ficha de datos
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Más información:
MRFE6VP6300HSR5 más información MRFE6VP6300HSR5 Product Details
Atributo del producto
Valor de atributo
Fabricante
NXP / Freescale
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
MRFE6VP6300H
Escribe
RF Power MOSFET
embalaje
Carrete
Unidad de peso
0.161213 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
NI-780S-4
Tecnología
Si
Ganar
26.6 dB at 230 MHz
Potencia de salida
300 W at Peak
Disipación de potencia Pd
1050 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 30 C
Frecuencia de operación
1.8 MHz to 600 MHz
Vgs-Puerta-Fuente-Voltaje
10 V
Vds-Drain-Source-Breakdown-Voltage
130 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Polaridad del transistor
Canal N
Tags
MRFE6VP6300H, MRFE6VP63, MRFE6VP6, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1826
***escale Semiconductor
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
***et
LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 1.8-600 MHZ, 30
***ical
Trans RF MOSFET N-CH 130V 5-Pin NI-780S T/R
***et Europe
Trans MOSFET N-CH 130V 4-Pin NI-780S T/R
***hardson RFPD
RF POWER TRANSISTOR LDMOS
***i-Key
FET RF 2CH 130V 230MHZ NI780S-4
***ark
RF POWER FET, N CH, 125V, NI-780S-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; Gain:26.5dB ;RoHS Compliant: Yes
MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs
NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More
Parte # Mfg. Descripción Valores Precio
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5-ND		NXP SemiconductorsFET RF 2CH 130V 230MHZ NI780S-4
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 50:$95.5168
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5		Avnet, Inc.Trans MOSFET N-CH 130V 4-Pin NI-780S T/R - Tape and Reel (Alt: MRFE6VP6300HSR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$97.2900
  • 100:$93.4900
  • 200:$89.7900
  • 300:$86.5900
  • 500:$84.8900
MRFE6VP6300HSR5
DISTI # 13T4415		NXP SemiconductorsRF POWER FET, N CHANNEL, 125V, NI-780S-4,Drain Source Voltage Vds:125V,Continuous Drain Current Id:100mA,Power Dissipation Pd:300W,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,RF Transistor Case:NI-780S,MSL:- RoHS Compliant: Yes0
  • 1:$111.5100
  • 10:$105.5200
  • 25:$100.1400
  • 50:$96.8000
  • 100:$88.8200
  • 250:$86.1900
  • 500:$83.4900
MRFE6VP6300HSR5
DISTI # 841-MRFE6VP6300HSR5		NXP SemiconductorsRF MOSFET Transistors VHV6 300W50VISM NI780S-4
RoHS: Compliant		0
  • 50:$95.5200
MRFE6VP6300HSR5
DISTI # MRFE6VP6300HSR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		25
  • 1:$111.6900
  • 10:$103.2200
  • 25:$100.1900
Imagen Parte # Descripción
MRFE6VP6300HR5

Mfr.#: MRFE6VP6300HR5

OMO.#: OMO-MRFE6VP6300HR5

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Mfr.#: MRFE6VP61K25NR6528

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 Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V
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Mfr.#: MRFE6VP61K25HSR5

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Mfr.#: MRFE6VP5600HR5

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 RF MOSFET Transistors VHV6 600W 50V NI1230H
MRFE6VP8600HR5

Mfr.#: MRFE6VP8600HR5

OMO.#: OMO-MRFE6VP8600HR5-NXP-SEMICONDUCTORS

 FET RF 2CH 130V 860MHZ NI-1230
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de MRFE6VP6300HSR5 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
125,24 US$
125,24 US$
10
118,97 US$
1 189,73 US$
100
112,71 US$
11 271,15 US$
500
106,45 US$
53 224,90 US$
1000
100,19 US$
100 188,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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