RF112DP

RF112DP
Mfr. #:
RF112DP
Fabricante:
G.P
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RF112DP Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
RF112, RF11, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
RF112B5G.P. 3047
    Imagen Parte # Descripción
    RF106-11

    Mfr.#: RF106-11

    OMO.#: OMO-RF106-11-1190

    Nuevo y original
    RF1101.E.008TR7X12

    Mfr.#: RF1101.E.008TR7X12

    OMO.#: OMO-RF1101-E-008TR7X12-1190

    Nuevo y original
    RF1338-000

    Mfr.#: RF1338-000

    OMO.#: OMO-RF1338-000-1190

    Resettable Fuses - PPTC 16V 1.1A-HD 40A MAX
    RF1500

    Mfr.#: RF1500

    OMO.#: OMO-RF1500-1190

    Nuevo y original
    RF1662SR

    Mfr.#: RF1662SR

    OMO.#: OMO-RF1662SR-1190

    Nuevo y original
    RF1S45N06SM

    Mfr.#: RF1S45N06SM

    OMO.#: OMO-RF1S45N06SM-1190

    Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S50N06LESM

    Mfr.#: RF1S50N06LESM

    OMO.#: OMO-RF1S50N06LESM-1190

    Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RF1S9530

    Mfr.#: RF1S9530

    OMO.#: OMO-RF1S9530-1190

    Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RF174-01SP1-01BJ1-1000

    Mfr.#: RF174-01SP1-01BJ1-1000

    OMO.#: OMO-RF174-01SP1-01BJ1-1000-1152

    MICRO RF CABLE ASSEMBLY
    RF174-02RP1-06BJ2-0160

    Mfr.#: RF174-02RP1-06BJ2-0160

    OMO.#: OMO-RF174-02RP1-06BJ2-0160-1190

    N/A
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de RF112DP es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    9,60 US$
    9,60 US$
    10
    9,12 US$
    91,20 US$
    100
    8,64 US$
    864,00 US$
    500
    8,16 US$
    4 080,00 US$
    1000
    7,68 US$
    7 680,00 US$
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