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FQB7P20TM_F085

FQB7P20TM_F085
Mfr. #:
FQB7P20TM_F085
Fabricante:
Fairchild Semiconductor
Descripción:
IGBT Transistors MOSFET 200V P-Channel QFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQB7P20TM_F085 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Unidad de peso
0.046296 oz
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 P-Channel
Id-corriente-de-drenaje-continua
- 7.3 A
Vds-Drain-Source-Breakdown-Voltage
- 200 V
Resistencia a la fuente de desagüe de Rds
690 mOhms
Polaridad del transistor
P-Channel
Tags
FQB7P20TM-F, FQB7P20T, FQB7P2, FQB7P, FQB7, FQB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
Trans MOSFET P-CH 200V 7.3A Automotive 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, P CH, -200V, -7.3A, TO-263-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.3A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:90W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
These P-Channel enchancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Technology.This advanced Technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and communication mode. These devices are well suited for high efficiency switching DC/DC converters.
***icroelectronics
N-channel 525 V, 0.41 Ohm, 10 A SuperMESH3(TM) Power MOSFET in D2PAK package
***et
Trans MOSFET N-CH 525V 10A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 10A I(D), 525V, 0.51ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 525V, 10A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 525V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***emi
N-Channel Power MOSFET, QFET®, 500 V, 9 A, 800 mΩ, D2PAK
***ure Electronics
N-Channel 500 V 0.8 Ohm Surface Mount Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 500V 9A 3-Pin (2+Tab) D2PAK T/R
***nell
MOSFET, N CH, 500V, 9A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.65ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:135W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ure Electronics
Single N-Channel 700 V 0.6 O 48 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
***ical
Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N-CH, 650V, 7A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited
***ark
MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drai
***ure Electronics
Single P-Channel 60 V 130 mOhm 21 nC SIPMOS® Power Mosfet - D2PAK
***nell
MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-18.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.101ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:81.1W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
***emi
P-Channel Power MOSFET, QFET®, -60 V, -27 A, 70 mΩ, D2PAK
***ure Electronics
P-Channel 60 V 70 mOhm Surface Mount Mosfet - D2PAK-3
*** Electronics
ON SEMICONDUCTOR - FQB27P06TM - MOSFET Transistor, P Channel, 27 A, -60 V, 0.055 ohm, -10 V, -4 V
***ical
Trans MOSFET P-CH 60V 27A 3-Pin (2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:120W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:-27A; Package / Case:D2-PAK; Power Dissipation Pd:120W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ure Electronics
IRF630S Series N-Channel 200 V 400 mOhms Surface Mount Power Mosfet - TO-263
***ical
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK
***ark
N CHANNEL MOSFET, 200V, 9A, SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N, 200V, 9A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 74W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Alternate Case Style: D2-PAK; Current Id Max: 9A; Junction to Case Thermal Resistance A: 1.7°C/W; On State resistance @ Vgs = 10V: 300mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 36A; Voltage Vds: 200V; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
Parte # Mfg. Descripción Valores Precio
FQB7P20TM-F085
DISTI # V72:2272_06301095		ON SemiconductorICE MOSFET800
  • 1:$0.7686
FQB7P20TM-F085
DISTI # V36:1790_06301095		ON SemiconductorICE MOSFET0
    FQB7P20TM-F085
    DISTI # FQB7P20TM-F085CT-ND    		ON SemiconductorMOSFET P-CH 200V 7.3A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		528In Stock
    • 100:$1.9497
    • 10:$2.4260
    • 1:$2.6900
    FQB7P20TM-F085
    DISTI # FQB7P20TM-F085DKR-ND    		ON SemiconductorMOSFET P-CH 200V 7.3A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		528In Stock
    • 100:$1.9497
    • 10:$2.4260
    • 1:$2.6900
    FQB7P20TM-F085
    DISTI # FQB7P20TM-F085TR-ND    		ON SemiconductorMOSFET P-CH 200V 7.3A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		Limited Supply - Call
    • 5600:$1.0937
    • 2400:$1.1357
    • 1600:$1.2199
    • 800:$1.3292
    FQB7P20TM-F085
    DISTI # 32434249    		ON SemiconductorICE MOSFET1600
    • 800:$0.9705
    FQB7P20TM-F085
    DISTI # 19269308    		ON SemiconductorICE MOSFET1600
    • 800:$0.3000
    FQB7P20TM-F085
    DISTI # 25921750    		ON SemiconductorICE MOSFET800
    • 7:$0.7686
    FQB7P20TM_F085
    DISTI # FQB7P20TM-F085    		ON SemiconductorTrans MOSFET P-CH 200V 7.3A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB7P20TM-F085)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel    		Asia - 800
    • 1600:$0.7648
    • 800:$0.7656
    FQB7P20TM_F085
    DISTI # FQB7P20TM-F085    		ON SemiconductorTrans MOSFET P-CH 200V 7.3A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB7P20TM-F085)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel    		Europe - 0
      FQB7P20TM_F085
      DISTI # FQB7P20TM-F085      		ON SemiconductorTrans MOSFET P-CH 200V 7.3A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB7P20TM-F085)
      RoHS: Compliant
      Min Qty: 800
      Container: Reel      		Americas - 0
      • 8000:$0.9442
      • 4800:$0.9681
      • 3200:$0.9805
      • 1600:$0.9932
      • 800:$0.9997
      FQB7P20TM-F085P
      DISTI # FQB7P20TM-F085P      		ON Semiconductor- Tape and Reel (Alt: FQB7P20TM-F085P)
      RoHS: Compliant
      Min Qty: 800
      Container: Reel      		Americas - 0
        FQB7P20TM_F085
        DISTI # 84W8879        		ON SemiconductorMOSFET, P CHANNEL, -200V, 0.54OHM, -7.3A, TO-263-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-7.3A,Drain Source Voltage Vds:-200V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:-10V,No. of Pins:3Pins RoHS Compliant: Yes0
        • 500:$0.9800
        • 250:$1.0800
        • 100:$1.2600
        • 50:$1.4400
        • 25:$1.6100
        • 10:$1.7900
        • 1:$2.0300
        FQB7P20TM_F085
        DISTI # 64R3109        		ON SemiconductorMOSFET, P CHANNEL, -200V, 0.54OHM, -7.3A, TO-263-3, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-7.3A,Drain Source Voltage Vds:-200V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:-10V RoHS Compliant: Yes1600
        • 1:$0.2400
        • 800:$0.2400
        • 1600:$0.2400
        • 3200:$0.2400
        • 4800:$0.2400
        FQB7P20TM-F085
        DISTI # 48AC1172        		ON SemiconductorPMOS D2PAK 200V 690 MOHM / REEL0
        • 1000:$1.3900
        • 500:$1.5000
        • 250:$1.6200
        • 100:$1.7900
        • 1:$2.2100
        FQB7P20TM-F085
        DISTI # 95W3212        		ON SemiconductorMOSFET Transistor, P Channel, -7.3 A, -200 V, 0.54 ohm, -10 V, -3 V RoHS Compliant: Yes726
        • 500:$1.3400
        • 250:$1.4400
        • 100:$1.5500
        • 50:$1.6700
        • 25:$1.8000
        • 10:$1.9300
        • 1:$2.2700
        FQB7P20TM-F085
        DISTI # 512-FQB7P20TM_F085        		ON SemiconductorMOSFET 200V P-Channel QFET
        RoHS: Compliant        		0
        • 1:$2.2500
        • 10:$1.9100
        • 100:$1.5300
        • 500:$1.3300
        • 800:$1.1000
        • 2400:$1.0300
        • 4800:$0.9950
        FQB7P20TM-F085
        DISTI # 2322624RL        		ON SemiconductorMOSFET, P CH, -200V, -7.3A, TO-263-3
        RoHS: Compliant        		0
        • 9600:$1.4700
        • 4800:$1.5300
        • 2400:$1.5900
        • 800:$1.7000
        • 500:$2.0400
        • 100:$2.3600
        • 10:$2.9400
        • 1:$3.4600
        FQB7P20TM-F085
        DISTI # 2323208        		ON SemiconductorMOSFET, P CH, -200V, -7.3A, TO-263-3
        RoHS: Compliant        		0
        • 9600:$1.4700
        • 4800:$1.5300
        • 2400:$1.5900
        • 800:$1.7000
        FQB7P20TM"F085
        DISTI # 2345307        		ON SemiconductorMOSFET, P CHANNEL, -200V, 0.54OHM, -7.3A, TO-263-3, FULL REEL
        RoHS: Compliant        		1600
        • 800:$1.0700
        FQB7P20TM-F085
        DISTI # 2322624        		ON SemiconductorMOSFET, P CH, -200V, -7.3A, TO-263-3
        RoHS: Compliant        		726
        • 9600:$1.4700
        • 4800:$1.5300
        • 2400:$1.5900
        • 800:$1.7000
        • 500:$2.0400
        • 100:$2.3600
        • 10:$2.9400
        • 1:$3.4600
        FQB7P20TM"F085
        DISTI # 2345307        		ON SemiconductorMOSFET, P CHANNEL, -200V, 0.54OHM, -7.3A
        RoHS: Compliant        		1600
        • 3200:£0.6980
        • 1600:£0.7150
        • 800:£0.7330
        FQB7P20TM-F085
        DISTI # 2322624        		ON SemiconductorMOSFET, P CH, -200V, -7.3A, TO-263-3726
        • 250:£0.9090
        • 100:£1.0500
        • 50:£1.3100
        • 10:£1.3200
        • 1:£1.7100
        Imagen Parte # Descripción
        FQB7P20TM

        Mfr.#: FQB7P20TM

        OMO.#: OMO-FQB7P20TM

        		 MOSFET 200V P-Channel QFET
        FQB7P20TM-F085

        Mfr.#: FQB7P20TM-F085

        OMO.#: OMO-FQB7P20TM-F085

        		 MOSFET 200V P-Channel QFET
        FQB7P20

        Mfr.#: FQB7P20

        OMO.#: OMO-FQB7P20-1190

        		 Nuevo y original
        FQB7P20TM

        Mfr.#: FQB7P20TM

        OMO.#: OMO-FQB7P20TM-ON-SEMICONDUCTOR

        		 MOSFET P-CH 200V 7.3A D2PAK
        FQB7P20TM-NL

        Mfr.#: FQB7P20TM-NL

        OMO.#: OMO-FQB7P20TM-NL-1190

        		 Nuevo y original
        FQB7P20TM-F085

        Mfr.#: FQB7P20TM-F085

        OMO.#: OMO-FQB7P20TM-F085-ON-SEMICONDUCTOR

        		 MOSFET P-CH 200V 7.3A D2PAK
        FQB7P20TM_F085

        Mfr.#: FQB7P20TM_F085

        OMO.#: OMO-FQB7P20TM-F085-126

        		 IGBT Transistors MOSFET 200V P-Channel QFET
        FQB7P20TM-F085P

        Mfr.#: FQB7P20TM-F085P

        OMO.#: OMO-FQB7P20TM-F085P-1190

        		 - Tape and Reel (Alt: FQB7P20TM-F085P)
        Disponibilidad
        Valores:
        Available
        En orden:
        1000
        Ingrese la cantidad:
        El precio actual de FQB7P20TM_F085 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,36 US$
        0,36 US$
        10
        0,34 US$
        3,42 US$
        100
        0,32 US$
        32,40 US$
        500
        0,31 US$
        153,00 US$
        1000
        0,29 US$
        288,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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