STGD3HF60HDT4

Mfr. #:: STGD3HF60HDT4
Fabricante:: STMicroelectronics
Descripción:: IGBT Transistors 4.5 A 600V IGBT 20V VGE 25A IFSM
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: STGD3HF60HDT4 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:: STGD3HF60HDT4 más información STGD3HF60HDT4 Product Details

Atributo del producto
Valor de atributo

Fabricante:: STMicroelectronics

Categoria de producto:: Transistores IGBT

RoHS:: Y

Tecnología:: Si

Paquete / Caja:: DPAK

Estilo de montaje:: SMD / SMT

Voltaje colector-emisor VCEO Max:: 600 V

Voltaje de saturación colector-emisor:: 2.95 V

Voltaje máximo del emisor de puerta:: 20 V

Corriente continua del colector a 25 C:: 7.5 A

Pd - Disipación de energía:: 38 W

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Serie:: STGD3HF60HDT4

Embalaje:: Carrete

Marca:: STMicroelectronics

Corriente de fuga puerta-emisor:: 100 nA

Tipo de producto:: Transistores IGBT

Cantidad de paquete de fábrica:: 2500

Subcategoría:: IGBT

Unidad de peso:: 0.009185 oz

Tags: STGD3, STGD, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGD3HF60HDT4 Puntajes y reseñas

M***v

Low amplifier, and delivery fast i am very pleased with my purchase thank you very much!!!

2019-06-29

V***v

Thank you!

2019-04-23

J***i

Delivery time = 35days. All OK

2019-06-23

Y***v

Long went, but came

2019-05-27

STGD3HF60HDT4 Descripción

***ical: Trans IGBT Chip N-CH 600V 7.5A 38000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: 4.5 A, 600 V very fast IGBT with Ultrafast diode

***ment14 APAC: 3/4.5 A, 600 V VERY FAST IGBT; DC Collector Current:7.5A; Emitter Saturation Voltage Vce(on):2.45V; Power Dissipation Pd:38W;

***nell: IGBT, W DIODE, 600V, 7.5A, 38W, DPAK; Transistor Type:IGBT; DC Collector Current:7.5A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:38W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:38W

***ical: Trans IGBT Chip N-CH 600V 9A 49000mW 3-Pin(2+Tab) DPAK T/R

***el Electronic: ON SEMICONDUCTOR NGTB03N60R2DT4G IGBT Single Transistor, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 9A, TO-252-3

***nell: IGBT, SINGLE, 600V, 9A, TO-252-3; DC Collector Current: 9A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 49W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 20A 72000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB10N60R2DT4G IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 20A, TO-252-3

***nell: IGBT, SINGLE, 600V, 20A, TO-252-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 72W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 16A 56000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB05N60R2DT4G IGBT Single Transistor, 16 A, 1.65 V, 56 W, 600 V, TO-252, 3 Pins

*** Stop Electro: Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 16A, TO-252-3

***nell: IGBT, SINGLE, 600V, 16A, TO-252-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 15A 56000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: N-channel 600 V, 7 A very fast IGBT

***roFlash: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA

***ser: IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT

***icroelectronics SCT: Short-circuit rugged IGBT, DPAK, Tape and Reel

***ment14 APAC: IGBT, SINGLE, 600V, 15A, TO-252-3

*** Electronic Components: IGBT Transistors PowerMESH" IGBT

***ponent Stockers USA: 15 A 600 V N-CHANNEL IGBT TO-252AA

*** Stop Electro: Insulated Gate Bipolar Transistors

***nell: IGBT, SINGLE, 600V, 15A, TO-252-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ical: Trans IGBT Chip N-CH 600V 15A 62000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: New short circuit rugged "K" series

***r Electronics: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel

***ser: Power MOSFET Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET

***nell: IGBT, SINGLE, 600V, 15A, TO-252; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 62W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ical: Trans IGBT Chip N-CH 600V 20A 62000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: 10 A, 600 V short-circuit rugged IGBT

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors N Ch 600V 10A

***ark: Ptd High Voltage Rohs Compliant: Yes

***nell: IGBT, D-PAK; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temper

Market price

Parte #	Mfg.	Descripción	Valores	Precio
STGD3HF60HDT4 DISTI # V72:2272_17751155	STMicroelectronics	Trans IGBT Chip N-CH 600V 7.5A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	1000:$0.6324 500:$0.7349 250:$0.8218 100:$0.8665 25:$1.0640 10:$1.0681 1:$1.2080
STGD3HF60HDT4 DISTI # 497-10960-1-ND	STMicroelectronics	IGBT 600V 7.5A 38W DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2462In Stock	1000:$0.8181 500:$1.0127 100:$1.2075 10:$1.5240 1:$1.7000
STGD3HF60HDT4 DISTI # 497-10960-6-ND	STMicroelectronics	IGBT 600V 7.5A 38W DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2462In Stock	1000:$0.8181 500:$1.0127 100:$1.2075 10:$1.5240 1:$1.7000
STGD3HF60HDT4 DISTI # 497-10960-2-ND	STMicroelectronics	IGBT 600V 7.5A 38W DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.7155 2500:$0.7470
STGD3HF60HDT4 DISTI # 18933559	STMicroelectronics	Trans IGBT Chip N-CH 600V 7.5A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	47500	2500:$0.7312
STGD3HF60HDT4 DISTI # 25931224	STMicroelectronics	Trans IGBT Chip N-CH 600V 7.5A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	1000:$0.6324 500:$0.7349 250:$0.8218 100:$0.8665 25:$1.0640 11:$1.0681
STGD3HF60HDT4 DISTI # STGD3HF60HDT4	STMicroelectronics	Trans IGBT Chip N-CH 600V 7.5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STGD3HF60HDT4) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.6739 5000:$0.6419 10000:$0.6129 15000:$0.5859 25000:$0.5739
STGD3HF60HDT4 DISTI # 511-STGD3HF60HDT4	STMicroelectronics	IGBT Transistors 4.5 A 600V IGBT 20V VGE 25A IFSM RoHS: Compliant	2487	1:$1.4800 10:$1.2600 100:$0.9680 500:$0.8560 1000:$0.6750 2500:$0.5990 10000:$0.5770
STGD3HF60HDT4	STMicroelectronics	RoHS: Compliant	Europe - 5000
STGD3HF60HDT4 DISTI # 2765163	STMicroelectronics	3/4.5 A, 600 V VERY FAST IGBT RoHS: Compliant	2055	1:$2.3500 10:$2.0000 100:$1.5400 500:$1.3600 1000:$1.0800 2500:$0.9490 10000:$0.9140
STGD3HF60HDT4 DISTI # 2765163	STMicroelectronics	3/4.5 A, 600 V VERY FAST IGBT RoHS: Compliant	2150	5:£1.0600 25:£0.9620 100:£0.7390 250:£0.6970 500:£0.6540
STGD3HF60HDT4 DISTI # C1S730200516961	STMicroelectronics	Trans IGBT Chip N-CH 600V 7.5A 38000mW 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	250:$0.8218 100:$0.8665 10:$1.0681

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Disponibilidad

Valores:: Available
En orden:: 1985
Ingrese la cantidad:

El precio actual de STGD3HF60HDT4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,48 US$~~; ~~1,48 US$~~

10: ~~1,26 US$~~; ~~12,60 US$~~

100: ~~0,97 US$~~; ~~96,80 US$~~

500: ~~0,86 US$~~; ~~428,00 US$~~

1000: ~~0,68 US$~~; ~~675,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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