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SFT1407-TL-E

SFT1407-TL-E
Mfr. #:
SFT1407-TL-E
Fabricante:
Rochester Electronics, LLC
Descripción:
Other semiconductors
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SFT1407-TL-E Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SFT1407, SFT140, SFT14, SFT1, SFT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N-CH, 45V, 14A, 21MOHM@10A, TP-FA
***r Electronics
Small Signal Field-Effect Transistor, 14A I(D), 45V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N CH 45V 14A TO251; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:45V; Cont Current Id:14A; On State Resistance:0.028ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:2.6V; Case Style:TP; Termination Type:Through Hole; Power Dissipation:1W; Transistor Case Style:TP
***el Electronic
TRANSISTOR,MOSFET,P-CHANNEL,45V V(BR)DSS,10A I(D),TO-252VAR
***ical
Trans MOSFET P-CH Si 45V 10A 3-Pin(2+Tab) TP-FA
***nell
MOSFET, P CH, 45V, 10A, TO-251; Transistor Polarity:P-Channel; Current Id Max:-10A; Drain Source Voltage Vds:-45V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:20V; Power Dissipation:15W; Transistor Case Style:TO-251; No. of Pins:3
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.07Ohm;ID 17A;TO-220AB;PD 45W;VGS +/-20V
***eco
Transistor MOSFET N Channel 55 Volt 17 Amp 3 Pin 3+ Tab TO-220 AB
*** Source Electronics
MOSFET N-CH 55V 17A TO-220AB / Trans MOSFET N-CH Si 55V 17A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
Single N-Channel 55 V 0.07 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***id Electronics
Transistor MOSFET N-Ch. 17A/55V TO220 IRFZ 24 NPBF
***roFlash
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 55V, 17A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:45W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
*** Source Electronics
MOSFET N-CH 55V 18A TO-220AB / Trans MOSFET N-CH Si 55V 18A 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 55 V 0.105 Ohm 15 nC HEXFET® Power Mosfet - TO-220-3
***id Electronics
Transistor MOSFET N-Ch. 18A/55V TO220 IRLZ 24 NPBF
***eco
55V SINGLE N-CHANNEL HEXFETPOWER MOSFET IN A HEXDIP PA
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 16 / Fall Time ns = 29 / Rise Time ns = 74 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 7.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 45
***ment14 APAC
MOSFET, N, 55V, 18A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:45W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:72A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.065Ohm;ID 17A;I-Pak (TO-251AA);PD 45W
***ure Electronics
Single N-Channel 55 V 0.065 Ohm 15 nC HEXFET® Power Mosfet - TO-251AA
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***id Electronics
Transistor MOSFET N-Ch. 60V 14A TO251 IRLU 024 NPBF
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ment14 APAC
MOSFET, N, 55V, 17A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:46W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:65mohm; Package / Case:IPAK; Power Dissipation Pd:46W; Power Dissipation Pd:46W; Pulse Current Idm:72A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***emi
N-Channel PowerTrench® MOSFET 40 V, 25 A, 7.8 mΩ
***ical
Trans MOSFET N-CH 40V 25A Automotive 3-Pin(2+Tab) DPAK T/R
***r Electronics
Power Field-Effect Transistor, 40V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
*** Electronic Components
MOSFET 40V 15A DPAK N-Chnl PowerTrench
***ark
40V, 25A, 6.2M , DpakN-Channel Powertrench / Reel
***et Europe
Trans MOSFET N-CH 40V 16A 8-Pin PowerPAK 1212 T/R
***enic
40V 16A 9m´Î@10V16.4A 62W 2.5V@250Ã×A N Channel PowerPAK 1212-8 MOSFETs ROHS
***-Wing Technology
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
***ment14 APAC
MOSFET, N-CH, 40V, 16A, PPAK1212-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
MOSFET 40V 16A 62W AEC-Q101 Qualified
***nell
MOSFET, N-CH, 40V, 16A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:62W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited
Parte # Mfg. Descripción Valores Precio
SFT1407-TL-E
DISTI # C1S722000129230		ON SemiconductorOther semiconductors3
  • 10:$0.4480
SFT1407-TL-EON Semiconductor 
RoHS: Not Compliant		700
  • 1000:$1.0600
  • 500:$1.1200
  • 100:$1.1600
  • 25:$1.2100
  • 1:$1.3000
SFT1407-TL-ESANYO Semiconductor Co Ltd 
RoHS: Not Compliant		671
  • 1000:$0.4400
  • 500:$0.4600
  • 100:$0.4800
  • 25:$0.5000
  • 1:$0.5400
Imagen Parte # Descripción
SFT1402-TL-E

Mfr.#: SFT1402-TL-E

OMO.#: OMO-SFT1402-TL-E-1190

 - Bulk (Alt: SFT1402-TL-E)
SFT1403-E

Mfr.#: SFT1403-E

OMO.#: OMO-SFT1403-E-1190

 Nuevo y original
SFT1405

Mfr.#: SFT1405

OMO.#: OMO-SFT1405-1190

 Nuevo y original
SFT1405-TL-E

Mfr.#: SFT1405-TL-E

OMO.#: OMO-SFT1405-TL-E-1190

 - Bulk (Alt: SFT1405-TL-E)
SFT1405TL-E

Mfr.#: SFT1405TL-E

OMO.#: OMO-SFT1405TL-E-1190

 Nuevo y original
SFT1405TLE

Mfr.#: SFT1405TLE

OMO.#: OMO-SFT1405TLE-1190

 Nuevo y original
SFT1407

Mfr.#: SFT1407

OMO.#: OMO-SFT1407-1190

 Nuevo y original
SFT1407-S-TL-E

Mfr.#: SFT1407-S-TL-E

OMO.#: OMO-SFT1407-S-TL-E-1190

 Nuevo y original
SFT1407-TL-E

Mfr.#: SFT1407-TL-E

OMO.#: OMO-SFT1407-TL-E-1190

 Other semiconductors
SFT1407TL-E

Mfr.#: SFT1407TL-E

OMO.#: OMO-SFT1407TL-E-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de SFT1407-TL-E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,60 US$
0,60 US$
10
0,57 US$
5,70 US$
100
0,54 US$
54,00 US$
500
0,51 US$
255,00 US$
1000
0,48 US$
480,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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