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FGA120N30DTU

FGA120N30DTU
Mfr. #:
FGA120N30DTU
Fabricante:
ON Semiconductor
Descripción:
IGBT 300V 120A 290W TO3P
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGA120N30DTU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FGA12, FGA1, FGA
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 300V 120A 290W TO3P
***ark
IGBT, PDP, 300V, TO-3P; Transistor type:IGBT; Voltage, Vces:300V; Current, Ic continuous a max:120A; Voltage, Vce sat max:1.4V; Power dissipation:290W; Package/Case:TO-3P; Current, Ic @ Vce sat:25A; Current, Icm pulsed:300A; Pin RoHS Compliant: Yes
***nell
IGBT, PDP, 300V, TO-3P; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.4V; Power Dissipation Pd: 290W; Collector Emitter Voltage V(br)ceo: 300V; Transistor Case Style: TO-3P; No. of Pins: 3Pins; Operating Temperature Max: 150°C; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Ic @ Vce Sat: 25A; Current Ic Continuous a Max: 120A; Current Temperature: 25°C; Fall Time tf: 130ns; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Junction to Case Thermal Resistance A: 0.43°C/W; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: With flywheel diode; Power Dissipation Max: 290W; Pulsed Current Icm: 300A; Rise Time: 270ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 300V
Parte # Mfg. Descripción Valores Precio
FGA120N30DTU
DISTI # FGA120N30DTU-ND		ON SemiconductorIGBT 300V 120A 290W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
    FGA120N30DTU
    DISTI # 512-FGA120N30DTU    		ON SemiconductorIGBT Transistors 300V PDP IGBT
    RoHS: Compliant    		0
      FGA120N30DTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 120A I(C), 300V V(BR)CES, N-Channel
      RoHS: Compliant      		364
      • 1000:$1.3800
      • 500:$1.4500
      • 100:$1.5100
      • 25:$1.5800
      • 1:$1.7000
      Imagen Parte # Descripción
      FGA120N30D

      Mfr.#: FGA120N30D

      OMO.#: OMO-FGA120N30D-1190

      		 Nuevo y original
      FGA120N30DTU

      Mfr.#: FGA120N30DTU

      OMO.#: OMO-FGA120N30DTU-ON-SEMICONDUCTOR

      		 IGBT 300V 120A 290W TO3P
      FGA120N33D

      Mfr.#: FGA120N33D

      OMO.#: OMO-FGA120N33D-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de FGA120N30DTU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,07 US$
      2,07 US$
      10
      1,97 US$
      19,66 US$
      100
      1,86 US$
      186,30 US$
      500
      1,76 US$
      879,75 US$
      1000
      1,66 US$
      1 656,00 US$
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