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IXYH100N65C3

IXYH100N65C3
Mfr. #:
IXYH100N65C3
Fabricante:
Littelfuse
Descripción:
IGBT Transistors 650V/200A XPT C3-Class TO-247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXYH100N65C3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IXYH100N65C3 más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
IGBTs - Single
Serie
GenX3, XPT
embalaje
Tubo
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Nombre comercial
XPT
Paquete-Estuche
TO-247-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-247 (IXYH)
Configuración
Único
Potencia máxima
830W
Tiempo de recuperación inverso trr
-
Colector-corriente-Ic-Max
200A
Voltaje-Colector-Emisor-Ruptura-Máx.
650V
Tipo IGBT
PT
Colector de corriente pulsado Icm
420A
Vce-en-Max-Vge-Ic
2.3V @ 15V, 70A
Energía de conmutación
2.15mJ (on), 840μJ (off)
Gate-Charge
164nC
Td-encendido-apagado-25 ° C
28ns/106ns
Condición de prueba
400V, 50A, 3 Ohm, 15V
Disipación de potencia Pd
830 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Colector-Emisor-Voltaje-VCEO-Max
650 V
Colector-Emisor-Saturación-Voltaje
1.85 V
Corriente-de-colector-continuo-a-25-C
200 A
Puerta-Emisor-Fuga-Corriente
100 nA
Voltaje máximo del emisor de puerta
30 V
Colector-continuo-Corriente-Ic-Max
200 A
Tags
IXYH10, IXYH1, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 200A
***i-Key
IGBT 650V 200A 830W TO247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Parte # Mfg. Descripción Valores Precio
IXYH100N65C3
DISTI # V36:1790_07768386		Littelfuse IncTrans IGBT Chip N-CH 650V 200A 830000mW 3-Pin(3+Tab) TO-247AD0
  • 30000:$4.0970
  • 15000:$4.1000
  • 3000:$4.4990
  • 300:$5.2560
  • 30:$5.3860
IXYH100N65C3
DISTI # IXYH100N65C3-ND		IXYS CorporationIGBT 650V 200A 830W TO247
Min Qty: 1
Container: Tube		316In Stock
  • 1000:$4.7912
  • 500:$5.5010
  • 250:$6.0333
  • 100:$6.3172
  • 25:$7.2756
  • 10:$7.6300
  • 1:$8.4500
IXYH100N65C3
DISTI # 747-IXYH100N65C3		IXYS CorporationIGBT Transistors 650V/200A XPT C3-Class TO-247
RoHS: Compliant		66
  • 1:$8.8700
  • 10:$7.9800
  • 25:$7.2700
  • 50:$6.6500
  • 100:$6.5600
  • 250:$5.9800
  • 500:$5.5000
  • 1000:$4.7900
IXYH100N65C3IXYS CorporationIGBT Transistors 650V/200A XPT C3-Class TO-247
RoHS: Compliant		Americas -
    IXYH100N65C3
    DISTI # IXYH100N65C3    		IXYS Corporation650V 200A 830W TO247AD
    RoHS: Compliant    		28
    • 1:€8.3900
    • 5:€5.3900
    • 30:€4.3900
    • 60:€4.2300
    Imagen Parte # Descripción
    IXYH10N170C

    Mfr.#: IXYH10N170C

    OMO.#: OMO-IXYH10N170C

    		 Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
    IXYH100N65A3

    Mfr.#: IXYH100N65A3

    OMO.#: OMO-IXYH100N65A3

    		 Discrete Semiconductor Modules Disc IGBT XPT-GenX3 TO-247AD
    IXYH10N170CV1

    Mfr.#: IXYH10N170CV1

    OMO.#: OMO-IXYH10N170CV1

    		 IGBT Transistors 1700V/10A XPT IGBT w/ Diode
    IXyH100N65C3

    Mfr.#: IXyH100N65C3

    OMO.#: OMO-IXYH100N65C3

    		 IGBT Transistors 650V/200A XPT C3-Class TO-247
    IXYH10N170C

    Mfr.#: IXYH10N170C

    OMO.#: OMO-IXYH10N170C-IXYS-CORPORATION

    		 IGBT 1.7KV 36A TO247
    IXYH10N450CHV

    Mfr.#: IXYH10N450CHV

    OMO.#: OMO-IXYH10N450CHV-1190

    		 Nuevo y original
    IXYH100N65A3

    Mfr.#: IXYH100N65A3

    OMO.#: OMO-IXYH100N65A3-IXYS-CORPORATION

    		 IGBT
    IXYH10N170CV1

    Mfr.#: IXYH10N170CV1

    OMO.#: OMO-IXYH10N170CV1-IXYS-CORPORATION

    		 IGBT 1.7KV 36A TO247
    IXYH100N65C3

    Mfr.#: IXYH100N65C3

    OMO.#: OMO-IXYH100N65C3-IXYS-CORPORATION

    		 IGBT Transistors 650V/200A XPT C3-Class TO-247
    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de IXYH100N65C3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    7,18 US$
    7,18 US$
    10
    6,83 US$
    68,26 US$
    100
    6,47 US$
    646,65 US$
    500
    6,11 US$
    3 053,65 US$
    1000
    5,75 US$
    5 748,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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