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IRLZ34NSPBF

IRLZ34NSPBF
Mfr. #:
IRLZ34NSPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRLZ34NSPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLZ34NSPBF DatasheetIRLZ34NSPBF Datasheet (P4-P6)IRLZ34NSPBF Datasheet (P7-P9)IRLZ34NSPBF Datasheet (P10-P11)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
55 V
Id - Corriente de drenaje continua:
30 A
Rds On - Resistencia de la fuente de drenaje:
60 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
16 V
Qg - Carga de puerta:
16.7 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
68 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
2.3 mm
Longitud:
6.5 mm
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET de potencia HEXFET
Ancho:
6.22 mm
Marca:
Infineon / IR
Transconductancia directa - Mín .:
11 S
Otoño:
29 ns
Tipo de producto:
MOSFET
Hora de levantarse:
100 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
21 ns
Tiempo típico de retardo de encendido:
8.9 ns
Parte # Alias:
SP001568692
Unidad de peso:
0.139332 oz
Tags
IRLZ34NS, IRLZ34N, IRLZ3, IRLZ, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.035Ohm;ID 30A;D2Pak;PD 68W;VGS +/-16V;-55d
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***Yang
Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK - Rail/Tube
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ment14 APAC
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.8W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:110mJ; Capacitance Ciss Typ:880pF; Current Id Max:30A; Package / Case:D2-PAK; Power Dissipation Pd:3.8W; Power Dissipation Pd:3.8W; Pulse Current Idm:110A; Reverse Recovery Time trr Typ:76ns; SMD Marking:Z34NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***emi
N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 26A, 35mΩ
***Yang
Trans MOSFET N-CH 60V 26A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ure Electronics
N-Channel 60 V 50 mO 3.7 W Surface Mount Power Mosfet - TO-263
***r Electronics
Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
***et
Trans MOSFET N-CH 55V 35A 3-Pin(2+Tab) TO-263AB Rail
***ponent Stockers USA
35 A 55 V 0.034 ohm N-CHANNEL Si POWER MOSFET TO-263AB
*** Electronic Components
MOSFET 20a 55V N-Channel UltraFET
***i-Key
MOSFET N-CH 55V 35A D2PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ser
MOSFETs 20a, 55V N-Channel UltraFET
***Yang
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs - Bulk
***ponent Stockers USA
29 A 60 V 0.04 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***ser
Not available to order 20a, 60V, 0.043 Ohm Logic Level N-Ch
***ure Electronics
IRLZ34S Series N-Channel 60 V 50 mOhm 3.7 W Power Mosfet - D2PAK (TO-263)
***ical
Trans MOSFET N-CH Si 60V 30A 3-Pin(2+Tab) D2PAK
*** Services
CoC and 2-years warranty / RFQ for pricing
Parte # Mfg. Descripción Valores Precio
IRLZ34NSPBF
DISTI # IRLZ34NSPBF-ND		Infineon Technologies AGMOSFET N-CH 55V 30A D2PAK
RoHS: Compliant
Min Qty: 850
Container: Tube		Limited Supply - Call
    IRLZ34NSPBF
    DISTI # IRLZ34NSPBF    		Infineon Technologies AGTrans MOSFET N-CH 55V 30A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: IRLZ34NSPBF)
    RoHS: Compliant
    Min Qty: 850
    Container: Tube    		Americas - 650
      IRLZ34NSPBF
      DISTI # 942-IRLZ34NSPBF      		Infineon Technologies AGMOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC
      RoHS: Compliant      		0
        IRLZ34NSPBFInternational RectifierPower Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Compliant        		2867
        • 1000:$0.5400
        • 500:$0.5700
        • 100:$0.5900
        • 25:$0.6200
        • 1:$0.6600
        IRLZ34NSPBF
        DISTI # 5430614P        		Infineon Technologies AGMOSFET N-CHANNEL 55V 30A D2PAK, TU16
        • 25:£0.8100
        • 100:£0.7000
        • 250:£0.6700
        • 500:£0.6600
        IRLZ34NSPBF
        DISTI # 5430614        		Infineon Technologies AGMOSFET N-CHANNEL 55V 30A D2PAK, EA36
        • 1:£2.0000
        • 25:£0.8100
        • 100:£0.7000
        • 250:£0.6700
        • 500:£0.6600
        IRLZ34NSPBF
        DISTI # 1013483        		Infineon Technologies AGMOSFET, N, D2-PAK
        RoHS: Compliant        		0
        • 1:$2.4100
        • 10:$2.0600
        • 100:$1.6400
        • 500:$1.4400
        • 1000:$1.2000
        • 2500:$1.1300
        Imagen Parte # Descripción
        IRLZ34

        Mfr.#: IRLZ34

        OMO.#: OMO-IRLZ34

        		 MOSFET RECOMMENDED ALT 844-IRLZ34PBF
        IRLZ34S

        Mfr.#: IRLZ34S

        OMO.#: OMO-IRLZ34S

        		 MOSFET N-Chan 60V 30 Amp
        IRLZ34NSPBF

        Mfr.#: IRLZ34NSPBF

        OMO.#: OMO-IRLZ34NSPBF

        		 MOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC
        IRLZ34L

        Mfr.#: IRLZ34L

        OMO.#: OMO-IRLZ34L-VISHAY

        		 MOSFET N-CH 60V 30A TO-262
        IRLZ34N

        Mfr.#: IRLZ34N

        OMO.#: OMO-IRLZ34N-1190

        		 MOSFET Transistor, N-Channel, TO-220AB
        IRLZ34NPBF

        Mfr.#: IRLZ34NPBF

        OMO.#: OMO-IRLZ34NPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 55V 30A TO-220AB
        IRLZ34NSTRRPBF

        Mfr.#: IRLZ34NSTRRPBF

        OMO.#: OMO-IRLZ34NSTRRPBF-1190

        		 Nuevo y original
        IRLZ34NSTRR

        Mfr.#: IRLZ34NSTRR

        OMO.#: OMO-IRLZ34NSTRR-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 55V 30A D2PAK
        IRLZ34NSPBF

        Mfr.#: IRLZ34NSPBF

        OMO.#: OMO-IRLZ34NSPBF-INFINEON-TECHNOLOGIES

        		 Darlington Transistors MOSFET 55V 1 N-CH HEXFET 35mOhms 16.7nC
        IRLZ34NLPBF

        Mfr.#: IRLZ34NLPBF

        OMO.#: OMO-IRLZ34NLPBF-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl
        Disponibilidad
        Valores:
        Available
        En orden:
        5000
        Ingrese la cantidad:
        El precio actual de IRLZ34NSPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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