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IRFS38N20DTRLP

IRFS38N20DTRLP
Mfr. #:
IRFS38N20DTRLP
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 200V 43A D2PAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFS38N20DTRLP Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IR
categoria de producto
FET - Single
embalaje
Carrete
Unidad de peso
0.139332 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-252-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
320 W
Temperatura mínima de funcionamiento
- 55 C
Otoño
47 ns
Hora de levantarse
95 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
44 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Resistencia a la fuente de desagüe de Rds
54 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
29 ns
Tiempo de retardo de encendido típico
16 ns
Qg-Gate-Charge
60 nC
Modo de canal
Mejora
Tags
IRFS38N20DTRLP, IRFS38N20DTRL, IRFS38N20DT, IRFS38N, IRFS38, IRFS3, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***eco
Transistor MOSFET Negative Channel 200 Volt 38A 3-Pin(2+Tab) D2PAK
***ark
MOSFET Transistor, N Channel, 44 A, 200 V, 54 mohm, 10 V, 5 V
***ure Electronics
Single N-Channel 200 V 0.054 Ohm 60 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***nell
MOSFET, N, 200V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 44A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissip
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***hard Electronics
In a Pack of 5, N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK ON Semiconductor FDB52N20TM
***emi
Power MOSFET, N-Channel, UniFETTM, 250V, 52A, 69mΩ, D2PAK
***ure Electronics
N-Channel 200 V 0.049 Ohm Surface Mount UniFET Mosfet - D2PAK-3
***et Europe
Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, 250V, 44A, 69mΩ, D2PAK
***ure Electronics
N-Channel 250 V 0.069 Ohm Surface Mount UniFET Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 250V 44A 3-Pin (2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 44A I(D), 250V, 0.069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 150V 51A 3-Pin (2+Tab) D2PAK T/R
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 150V,RDS(ON) 32 Milliohms,ID 51A,D2Pak,PD 230W,VGS+/-30V
***ure Electronics
N Channel 150 V 51 A 32 mOhm Surface Mount Hexfet Power Mosfet - D2PAK
***eco
IRFS52N15DTRLP,MOSFET, 150V, 6 0A, 32 MOHM, 60 NC QG, D2-PAK
***nell
MOSFET, N, 150V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissip
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;D2Pak;PD 200W;VGS +/-30V
***ure Electronics
Single N-Channel 200 V 0.082 Ohm 70 nC HEXFET® Power Mosfet - D2PAK
***eco
Transistor MOSFET N Channel 200 Volt 31.6 Amp 3 Pin 2+ Tab D2pak
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ark
N Channel Mosfet, 200V, 31A, D2-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:31A; On Resistance Rds(On):0.082Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***emi
N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, D2PAK
***Yang
Trans MOSFET N-CH 250V 33A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ure Electronics
Single N-Channel 250 V 235 W 48 nC Silicon Surface Mount Mosfet - TO-263-3
*** Stop Electro
Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***(Formerly Allied Electronics)
IRFS4229PBF N-channel MOSFET Transistor; 45 A; 250 V; 3-Pin D2PAK
***ineon SCT
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 250 V 48 mOhm 110 nC HEXFET® Power Mosfet - D2PAK
*** Source Electronics
Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 250V 45A D2PAK
***nell
MOSFET, N, 250V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.042ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissip
*** Stop Electro
Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
Single N-Channel 150 V 0.045 Ohm 110 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 150V 41A 3-Pin(2+Tab) D2PAK T/R
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 200 W
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:41A; On Resistance Rds(On):0.045Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***emi
N-Channel Power MOSFET, QFET®, 200 V, 31 A, 75 mΩ, D2PAK
***et
Trans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ark
MOSFET Transistor, N Channel, 40 A, 200 V, 45 mohm, 10 V, 3 V
***ure Electronics
N-Channel 200 V 0.045 O Surface Mount STripFET™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 200V 40A 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
N-channel 200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247
***nell
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 160W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 40A; On State resistance @ Vgs = 10V: 45mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 160A; SMD Marking: 40NF20; Termination Type: Surface Mount Device; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
Parte # Mfg. Descripción Valores Precio
IRFS38N20DTRLP
DISTI # V72:2272_13891423		Infineon Technologies AGTrans MOSFET N-CH 200V 38A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		700
  • 75000:$1.1472
  • 30000:$1.1594
  • 15000:$1.1716
  • 6000:$1.1840
  • 3000:$1.1963
  • 1000:$1.2854
  • 500:$1.4282
  • 250:$1.5481
  • 100:$1.6299
  • 50:$1.8303
  • 25:$1.8521
  • 10:$1.8741
  • 1:$2.1408
IRFS38N20DTRLP
DISTI # IRFS38N20DTRLPCT-ND		Infineon Technologies AGMOSFET N-CH 200V 43A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3075In Stock
  • 100:$2.3227
  • 10:$2.8330
  • 1:$3.1700
IRFS38N20DTRLP
DISTI # IRFS38N20DTRLPDKR-ND		Infineon Technologies AGMOSFET N-CH 200V 43A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3075In Stock
  • 100:$2.3227
  • 10:$2.8330
  • 1:$3.1700
IRFS38N20DTRLP
DISTI # IRFS38N20DTRLPTR-ND		Infineon Technologies AGMOSFET N-CH 200V 43A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		2400In Stock
  • 800:$1.6500
IRFS38N20DTRLP
DISTI # 30331795		Infineon Technologies AGTrans MOSFET N-CH 200V 38A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		700
  • 500:$1.5209
  • 250:$1.5680
  • 100:$1.6510
  • 25:$1.8546
  • 10:$1.8759
  • 7:$2.1421
IRFS38N20DTRLP
DISTI # IRFS38N20DTRLP		Infineon Technologies AGTrans MOSFET N-CH 200V 38A 3-Pin(2+Tab) D2PAK T/R (Alt: IRFS38N20DTRLP)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
    IRFS38N20DTRLP
    DISTI # IRFS38N20DTRLP    		Infineon Technologies AGTrans MOSFET N-CH 200V 38A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS38N20DTRLP)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel    		Americas - 0
    • 800:$1.1519
    • 1600:$1.1109
    • 3200:$1.0699
    • 4800:$1.0339
    • 8000:$1.0159
    IRFS38N20DTRLP
    DISTI # 70017796    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.054Ohm,ID 43A,D2Pak,PD 300W,VGS +/-30V
    RoHS: Compliant    		0
    • 800:$5.1170
    IRFS38N20DTRLPInfineon Technologies AGSingle N-Channel 200 V 0.054 Ohm 91 nC HEXFET Power Mosfet - D2PAK
    RoHS: Compliant    		6400Reel
    • 800:$1.1600
    IRFS38N20DTRLPInfineon Technologies AGSingle N-Channel 200 V 0.054 Ohm 91 nC HEXFET Power Mosfet - D2PAK
    RoHS: Compliant    		600Cut Tape/Mini-Reel
    • 1:$1.7900
    • 50:$1.4800
    • 100:$1.4300
    • 250:$1.3600
    • 500:$1.2900
    IRFS38N20DTRLP
    DISTI # 942-IRFS38N20DTRLP    		Infineon Technologies AGMOSFET MOSFT 200V 44A 54mOhm 60nC
    RoHS: Compliant    		1029
    • 1:$2.6500
    • 10:$2.2500
    • 100:$1.9600
    • 250:$1.8600
    • 500:$1.6700
    IRFS38N20DTRLPInternational Rectifier 172
    • 85:$2.7441
    • 24:$2.9666
    • 1:$4.4499
    IRFS38N20DTRLP
    DISTI # 8274105P    		Infineon Technologies AGHEXFET N-CH MOSFET 38A 200V D2PAK, RL610
    • 50:£1.8040
    • 100:£1.4400
    IRFS38N20DTRLPInternational Rectifier 
    RoHS: Compliant    		Europe - 370
      IRFS38N20DTRLP
      DISTI # 1298484      		Infineon Technologies AGMOSFET, N, 200V, D2-PAK
      RoHS: Compliant      		0
      • 1:$4.1900
      • 10:$3.5600
      • 100:$3.1000
      • 250:$2.9400
      • 500:$2.6500
      • 800:$2.2200
      IRFS38N20DTRLP
      DISTI # C1S322000495128      		Infineon Technologies AGTrans MOSFET N-CH 200V 38A 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		700
      • 250:$1.5701
      • 100:$1.6915
      • 25:$1.8842
      • 10:$1.8910
      Imagen Parte # Descripción
      IRFS38N20DTRRP

      Mfr.#: IRFS38N20DTRRP

      OMO.#: OMO-IRFS38N20DTRRP

      		 MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC
      IRFS38N20DTRRP

      Mfr.#: IRFS38N20DTRRP

      OMO.#: OMO-IRFS38N20DTRRP-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 200V 43A D2PAK
      IRFS38N20DTRLP-CUT TAPE

      Mfr.#: IRFS38N20DTRLP-CUT TAPE

      OMO.#: OMO-IRFS38N20DTRLP-CUT-TAPE-1190

      		 Nuevo y original
      IRFS38N20D

      Mfr.#: IRFS38N20D

      OMO.#: OMO-IRFS38N20D-1190

      		 Nuevo y original
      IRFS38N20DPBF

      Mfr.#: IRFS38N20DPBF

      OMO.#: OMO-IRFS38N20DPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 200V 43A D2PAK
      IRFS38N20DTR

      Mfr.#: IRFS38N20DTR

      OMO.#: OMO-IRFS38N20DTR-1190

      		 Nuevo y original
      IRFS38N20DTRL

      Mfr.#: IRFS38N20DTRL

      OMO.#: OMO-IRFS38N20DTRL-1190

      		 MOSFET Transistor, N-Channel, TO-263AB
      IRFS38N20DTRLP

      Mfr.#: IRFS38N20DTRLP

      OMO.#: OMO-IRFS38N20DTRLP-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 200V 43A D2PAK
      IRFS38N20DTRLPBF

      Mfr.#: IRFS38N20DTRLPBF

      OMO.#: OMO-IRFS38N20DTRLPBF-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      5500
      Ingrese la cantidad:
      El precio actual de IRFS38N20DTRLP es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,06 US$
      1,06 US$
      10
      1,01 US$
      10,06 US$
      100
      0,95 US$
      95,34 US$
      500
      0,90 US$
      450,25 US$
      1000
      0,85 US$
      847,50 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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