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BSM120D12P2C005

BSM120D12P2C005
Mfr. #:
BSM120D12P2C005
Fabricante:
Rohm Semiconductor
Descripción:
Discrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSM120D12P2C005 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BSM120D12P2C005 más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
Módulos de semiconductores discretos
RoHS:
Y
Producto:
Módulos de semiconductores de potencia
Escribe:
MOSFET de potencia SiC
Vgs - Voltaje puerta-fuente:
- 6 V, 22 V
Estilo de montaje:
Montaje con tornillo
Paquete / Caja:
Módulo
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
BSMx
Embalaje:
A granel
Configuración:
Medio puente
Altura:
21.1 mm
Longitud:
122 mm
Ancho:
45.6 mm
Marca:
Semiconductor ROHM
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Tiempo de retardo típico:
45 ns
Otoño:
60 ns
Id - Corriente de drenaje continua:
134 A
Pd - Disipación de energía:
935 W
Tipo de producto:
Módulos de semiconductores discretos
Hora de levantarse:
50 ns
Cantidad de paquete de fábrica:
12
Subcategoría:
Módulos de semiconductores discretos
Tiempo de retardo de apagado típico:
170 ns
Tiempo típico de retardo de encendido:
45 ns
Vds - Voltaje de ruptura de drenaje-fuente:
1200 V
Vgs th - Voltaje umbral puerta-fuente:
1.6 V
Parte # Alias:
BSM120D12P2C005
Unidad de peso:
9.856004 oz
Tags
BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Module, N Channel, 120 A, 1.2 kV, 2.7 V RoHS Compliant: Yes
***Components
Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C ROHM BSM120D12P2C005
***et
Trans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray
***i-Key
MOSFET 2N-CH 1200V 120A MODULE
***ukat
SiC-N-Ch-Half-Bridge+2xSBD 1200V 134A C-
***ment14 APAC
MODULE, POWER, SIC, 1200V, 120A
***p One Stop Japan
Power Module Automotive 10-Pin Tray
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
Parte # Mfg. Descripción Valores Precio
BSM120D12P2C005
DISTI # BSM120D12P2C005-ND		ROHM SemiconductorMOSFET 2N-CH 1200V 120A MODULE
RoHS: Compliant
Min Qty: 1
Container: Bulk		On Order
  • 10:$372.1830
  • 1:$391.0600
BSM120D12P2C005
DISTI # BSM120D12P2C005		ROHM SemiconductorTrans SiC MOSFET N-CH 1.2KV 120A 10-Pin Case C Tray - Bulk (Alt: BSM120D12P2C005)
RoHS: Compliant
Min Qty: 12
Container: Bulk		Americas - 0
  • 12:$387.8900
  • 24:$363.6900
  • 48:$342.3900
  • 72:$323.3900
  • 120:$314.6900
BSM120D12P2C005
DISTI # 755-BSM120D12P2C005		ROHM SemiconductorDiscrete Semiconductor Modules Mod: 1200V 120A (w/ Diode)
RoHS: Compliant		0
  • 1:$391.0600
  • 5:$381.6300
BSM120D12P2C005
DISTI # 2345472		ROHM SemiconductorMODULE, POWER, SIC, 1200V, 120A
RoHS: Compliant		0
  • 1:£371.0000
  • 5:£307.0000
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Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de BSM120D12P2C005 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
355,48 US$
355,48 US$
5
346,93 US$
1 734,65 US$
10
338,32 US$
3 383,20 US$
25
333,57 US$
8 339,25 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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