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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SOM100N042M7GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 100A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | Europe - 800 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: SOM100N042M7GE3 OMO.#: OMO-SOM100N042M7GE3-1190 |
Power Field-Effect Transistor, 100A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |