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IRFB7534PBF

IRFB7534PBF
Mfr. #:
IRFB7534PBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFET N CH 60V 195A TO-220AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFB7534PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IRFB7534PBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
195 A
Rds On - Resistencia de la fuente de drenaje:
2 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.7 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
186 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
294 W
Configuración:
Único
Nombre comercial:
Fuerte IRFET
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
498 S
Otoño:
93 ns
Tipo de producto:
MOSFET
Hora de levantarse:
134 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
118 ns
Tiempo típico de retardo de encendido:
20 ns
Parte # Alias:
SP001554650
Unidad de peso:
0.211644 oz
Tags
IRFB753, IRFB75, IRFB7, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    N***v
    N***v
    BG

    super

    2019-06-05
    A***s
    A***s
    RU

    Received

    2019-06-20
    R***U
    R***U
    RO

    ok

    2019-07-04
    G***i
    G***i
    IT

    good quality

    2019-06-01
***ure Electronics
Single N-Channel 60 V 2.4 mOhm 186 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop Japan
Trans MOSFET N-CH Si 60V 232A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 294 W
***ical
Trans MOSFET N-CH 60V 232A 3-Pin(3+Tab) TO-220AB Tube
***et Europe
Trans MOSFET N-CH 60V 232A 3-Pin TO-220AB Tube
***et
MOSFET, 60V, 195A, 2.4 MOHM, 186 NC QG, TO-220AB
***ied Electronics & Automation
MOSFET 60V 195A StrongIRFET TO220AB
***ark
MOSFET, N CH, 60V, 195A, TO-220AB-3
***i-Key
MOSFET N CH 60V 195A TO-220AB
***ronik
N-CH 60V 195A 2,4mOhm TO220-3 RoHSconf
***ukat
N-Ch 60V 195A 294W 0,0024R TO220AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, CANALE N, 60V, 195A, TO-220AB-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:195A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.002ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.7V; Dissipazione di Potenza Pd:294W; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-55°C
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Parte # Mfg. Descripción Valores Precio
IRFB7534PBF
DISTI # V99:2348_13890768		Infineon Technologies AGTrans MOSFET N-CH Si 60V 232A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		800
  • 1000:$1.1329
  • 500:$1.1963
  • 100:$1.3290
  • 50:$1.5792
  • 1:$1.7873
IRFB7534PBF
DISTI # IRFB7534PBF-ND		Infineon Technologies AGMOSFET N CH 60V 195A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		218In Stock
  • 1000:$1.2103
  • 500:$1.4607
  • 100:$1.8780
  • 50:$2.0868
  • 1:$2.5900
IRFB7534PBF
DISTI # 21094921		Infineon Technologies AGTrans MOSFET N-CH Si 60V 232A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		4452
  • 500:$1.2768
  • 100:$1.4592
  • 12:$1.8240
IRFB7534PBF
DISTI # 30286909		Infineon Technologies AGTrans MOSFET N-CH Si 60V 232A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		800
  • 500:$1.1963
  • 100:$1.3290
  • 50:$1.5792
  • 8:$1.7873
IRFB7534PBF
DISTI # IRFB7534PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 232A 3-Pin TO-220AB Tube - Rail/Tube (Alt: IRFB7534PBF)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$0.8739
  • 550:$0.8429
  • 1000:$0.8119
  • 2250:$0.7849
  • 4500:$0.7709
IRFB7534PBF
DISTI # SP001554650		Infineon Technologies AGTrans MOSFET N-CH 60V 232A 3-Pin TO-220AB Tube (Alt: SP001554650)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.8900
  • 10:€1.5900
  • 25:€1.5900
  • 50:€1.5900
  • 100:€1.2900
  • 500:€1.0900
  • 1000:€1.0900
IRFB7534PBF
DISTI # 70411806		Infineon Technologies AGIRFB7534PBF N-channel MOSFET Transistor,195 A,60 V,3-Pin TO-220AB
RoHS: Compliant		44
  • 1:$3.4100
  • 10:$3.0100
  • 100:$2.6200
  • 500:$2.2700
  • 1000:$2.0100
IRFB7534PBF
DISTI # 942-IRFB7534PBF		Infineon Technologies AGMOSFET MOSFET N CH 60V 195A TO-220AB
RoHS: Compliant		990
  • 1:$2.2400
  • 10:$1.9000
  • 100:$1.5200
  • 500:$1.3300
IRFB7534PBF
DISTI # IRFB7534PBF		Infineon Technologies AGN-Ch 60V 195A 294W 0,0024R TO220AB
RoHS: Compliant		380
  • 10:€1.2500
  • 50:€0.9525
  • 200:€0.8525
  • 500:€0.8210
IRFB7534PBF
DISTI # TMOSP12146		Infineon Technologies AGN-CH 60V 195A 2,4mOhm TO220-3
RoHS: Compliant		Stock DE - 0Stock US - 0
  • 1000:$1.0984
IRFB7534PBF
DISTI # 2406515		Infineon Technologies AGMOSFET, N CH, 60V, 195A, TO-220AB-3
RoHS: Compliant		0
  • 1:£1.9100
  • 10:£1.4500
  • 100:£1.1500
  • 250:£1.0800
  • 500:£1.0100
IRFB7534PBF
DISTI # 2406515		Infineon Technologies AGMOSFET, N CH, 60V, 195A, TO-220AB-3
RoHS: Compliant		0
  • 1:$3.5500
  • 10:$3.0100
  • 100:$2.4100
  • 500:$2.1000
IRFB7534PBF
DISTI # C1S327401065732		Infineon Technologies AGTrans MOSFET N-CH Si 60V 232A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		724
  • 200:$1.1000
  • 100:$1.2500
  • 50:$1.4800
  • 10:$1.8000
  • 1:$3.5400
IRFB7534PBF
DISTI # C1S322000489154		Infineon Technologies AGMOSFETs
RoHS: Compliant		800
  • 500:$1.1963
  • 100:$1.3290
  • 50:$1.5792
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Disponibilidad
Valores:
508
En orden:
2491
Ingrese la cantidad:
El precio actual de IRFB7534PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,12 US$
2,12 US$
10
1,80 US$
18,00 US$
100
1,44 US$
144,00 US$
500
1,26 US$
630,00 US$
1000
1,04 US$
1 040,00 US$
2000
1,03 US$
2 060,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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