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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SIR846DP-T1-GE3 DISTI # SIR846DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 38In Stock |
|
| SIR846DP-T1-GE3 DISTI # SIR846DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 38In Stock |
|
| SIR846DP-T1-GE3 DISTI # SIR846DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 100V 60A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | On Order |
|
| SIR846DP-T1-GE3 DISTI # SIR846DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 100V 20A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR846DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 6000 |
|
| SIR846DP-T1-GE3 DISTI # 35R6201 | Vishay Intertechnologies | N CHANNEL MOSFET, 100V, 60A,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):7.8mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,No. of Pins:8Pins , RoHS Compliant: Yes | 0 |
|
| SIR846DP-T1-GE3. DISTI # 28AC2112 | Vishay Intertechnologies | N-CHANNEL 100-V (D-S) MOSFET , ROHS COMPLIANT: YES | 6000 |
|
| SIR846DP-T1-GE3 DISTI # 781-SIR846DP-GE3 | Vishay Intertechnologies | MOSFET 100V 60A 104W 7.8mohm @ 10V RoHS: Compliant | 124 |
|
| SIR846DP-T1-GE3 | Vishay Siliconix | 20 A, 100 V, 0.0078 ohm, N-CHANNEL, Si, POWER, MOSFET | 40 |
|
| SIR846DP-T1-GE3 | Vishay Intertechnologies | MOSFET 100V 60A 104W 7.8mohm @ 10V RoHS: Compliant | Americas - 3000 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: SIR840DP-T1-GE3 OMO.#: OMO-SIR840DP-T1-GE3 |
MOSFET N-CHANNEL 30-V MOSFET |
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Mfr.#: SIR840DP-T1-GE3 OMO.#: OMO-SIR840DP-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET N-CHANNEL 30-V MOSFET |
|
Mfr.#: SIR840DP OMO.#: OMO-SIR840DP-1190 |
Nuevo y original |
|
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Mfr.#: SIR840DP-T1-E3 OMO.#: OMO-SIR840DP-T1-E3-1190 |
Nuevo y original |