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SIRA02DP-T1-GE3

SIRA02DP-T1-GE3
Mfr. #:
SIRA02DP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIRA02DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIRA02DP-T1-GE3 DatasheetSIRA02DP-T1-GE3 Datasheet (P4-P6)SIRA02DP-T1-GE3 Datasheet (P7-P9)SIRA02DP-T1-GE3 Datasheet (P10-P12)SIRA02DP-T1-GE3 Datasheet (P13)
ECAD Model:
Más información:
SIRA02DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
50 A
Rds On - Resistencia de la fuente de drenaje:
1.65 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.1 V
Vgs - Voltaje puerta-fuente:
20 V, - 16 V
Qg - Carga de puerta:
117 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
71.4 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SEÑOR
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
110 S
Otoño:
8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
42 ns
Tiempo típico de retardo de encendido:
16 ns
Parte # Alias:
SIRA02DP-GE3
Unidad de peso:
0.017870 oz
Tags
SIRA02, SIRA0, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 50A; 2mohm @ 10V; PowerPAK SO-8
***nell
MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00165ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***ark
MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK SO-8
***ure Electronics
Single N-Channel 30 V 2.15 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8
***nell
MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:27.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***ark
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Cur
***ure Electronics
Single N-Channel 30 V 2.5 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.5mohm @ 10V; PowerPAK SO-8
***ark
MOSFET, N-CH, 30V, 60A, POWERPAK SO-8; Transistor Polarity:N Channel; Continuous
***enic
30V 60A 6.25W 1.45m´Î@10V20A 2.3V@250Ã×A N Channel PowerPAK SO-8 MOSFETs ROHS
***ical
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R
***el Electronic
MOSFET 30V 60A 104W 1.45mohm @ 10V
*** Services
CoC and 2-years warranty / RFQ for pricing
***DA Technology Co., Ltd.
Product Description Demo for Development.
*** Devices
TRANS, SBU, TED, DPN, SIR812DP
***nell
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***roFlash
Mosfet, Power; N-ch; Vdss 30V; Rds(on) 7.5MILLIOHMS; Id 65A; D-pak (TO-252AA); Pd 75W
***ure Electronics
Single N-Channel 30V 10 mOhm 10 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
N CHANNEL MOSFET, 30V, 65A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:65A;
***nsix Microsemi
Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
Mosfet Transistor; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:65A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
***emi
N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ
***ure Electronics
N-Channel 30 V 55 A 10.5 mO Surface Mount PowerTrench Mosfet - DPAK
***r Electronics
Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ment14 APAC
MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:60mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:55A; Package / Case:DPAK; Power Dissipation Pd:60mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SIRA02DP-T1-GE3
DISTI # V72:2272_09216066		Vishay IntertechnologiesTrans MOSFET N-CH 30V 37.3A 8-Pin PowerPAK SO EP T/R
RoHS: Compliant		2965
  • 1000:$0.9245
  • 500:$0.9447
  • 250:$1.0902
  • 100:$1.1015
  • 25:$1.3724
  • 10:$1.4456
  • 1:$1.9291
SIRA02DP-T1-GE3
DISTI # V36:1790_09216066		Vishay IntertechnologiesTrans MOSFET N-CH 30V 37.3A 8-Pin PowerPAK SO EP T/R
RoHS: Compliant		0
  • 3000000:$0.7772
  • 1500000:$0.7774
  • 300000:$0.7882
  • 30000:$0.8052
  • 3000:$0.8080
SIRA02DP-T1-GE3
DISTI # SIRA02DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SIRA02DP-T1-GE3
    DISTI # SIRA02DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 30V 50A PPAK SO-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SIRA02DP-T1-GE3
      DISTI # SIRA02DP-T1-GE3TR-ND      		Vishay SiliconixMOSFET N-CH 30V 50A PPAK SO-8
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.8080
      SIRA02DP-T1-GE3
      DISTI # 31289202      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 37.3A 8-Pin PowerPAK SO EP T/R
      RoHS: Compliant      		2965
      • 9:$1.9291
      SIRA02DP-T1-GE3
      DISTI # SIRA02DP-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 37.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA02DP-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 3000
      • 30000:$0.7299
      • 18000:$0.7499
      • 12000:$0.7719
      • 6000:$0.8049
      • 3000:$0.8289
      SIRA02DP-T1-GE3
      DISTI # SIRA02DP-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 37.3A 8-Pin PowerPAK SO T/R (Alt: SIRA02DP-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Europe - 0
      • 30000:€0.6739
      • 18000:€0.7039
      • 12000:€0.7969
      • 6000:€0.9829
      • 3000:€1.3699
      SIRA02DP-T1-GE3
      DISTI # SIRA02DP-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 37.3A 8-Pin PowerPAK SO T/R (Alt: SIRA02DP-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Asia - 0
        SIRA02DP-T1-GE3
        DISTI # 05W5776        		Vishay IntertechnologiesMOSFET, 30V, 50A, PPAKSO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.00165ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.1V,No. of Pins:8Pins RoHS Compliant: Yes2780
        • 500:$1.0100
        • 100:$1.1500
        • 50:$1.2600
        • 25:$1.3700
        • 10:$1.4800
        • 1:$1.7900
        SIRA02DP-T1-GE3
        DISTI # 70243883        		Vishay SiliconixSemiconcuctor,Mosfet,TrenchFET,N-Channel,30V,50A,2mohm @ 10V,PowerPAK SO-8
        RoHS: Compliant        		0
        • 3000:$0.8590
        SIRA02DP-T1-GE3
        DISTI # 78-SIRA02DP-T1-GE3        		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
        RoHS: Compliant        		2933
        • 1:$1.7700
        • 10:$1.4700
        • 100:$1.1400
        • 500:$0.9970
        • 1000:$0.8260
        • 3000:$0.7690
        • 6000:$0.7410
        • 9000:$0.7120
        SIRA02DP-T1-GE3Vishay Intertechnologies 4002
          SIRA02DP-T1-GE3
          DISTI # 7879361P          		Vishay IntertechnologiesMOSFET N-CH 30V 37.3A POWERPAK SO8, RL2990
          • 25:£0.4900
          SIRA02DP-T1-GE3
          DISTI # 2114702          		Vishay IntertechnologiesMOSFET, 30V, 50A, PPAKSO-82867
          • 500:£0.6660
          • 250:£0.6770
          • 100:£0.6880
          • 25:£0.6980
          • 5:£0.7880
          SIRA02DP-T1-GE3
          DISTI # 2114702          		Vishay IntertechnologiesMOSFET, 30V, 50A, PPAKSO-8
          RoHS: Compliant          		2779
          • 3000:$1.4700
          • 500:$1.5000
          • 100:$1.7200
          • 10:$2.2200
          • 1:$2.6700
          SIRA02DP-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
          RoHS: Compliant          		Americas -
          • 3000:$0.7920
          • 6000:$0.7520
          • 12000:$0.7290
          • 18000:$0.7090
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          Disponibilidad
          Valores:
          Available
          En orden:
          1985
          Ingrese la cantidad:
          El precio actual de SIRA02DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          1,77 US$
          1,77 US$
          10
          1,47 US$
          14,70 US$
          100
          1,14 US$
          114,00 US$
          500
          1,00 US$
          498,50 US$
          1000
          0,83 US$
          826,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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