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SI3475DV-T1-E3

SI3475DV-T1-E3
Mfr. #:
SI3475DV-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 200V 0.95A 3.2W 1.61ohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI3475DV-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3475DV-T1-E3 DatasheetSI3475DV-T1-E3 Datasheet (P4-P6)SI3475DV-T1-E3 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TSOP-6
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI3
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI3475DV-E3
Unidad de peso:
0.000705 oz
Tags
SI347, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET P-CH 200V 0.95A 6-TSOP
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-200V; Continuous Drain Current, Id:-950mA; On Resistance, Rds(on):1.65ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-4V ;RoHS Compliant: Yes
***nell
MOSFET, P, TSOP; Transistor Type:TrenchFET; Transistor Polarity:P; Voltage, Vds Typ:-200V; Current, Id Cont:0.75A; Resistance, Rds On:1.37ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:TSOP; Termination Type:SMD; Base Number:3475; Current, Idm Pulse:3A; No. of Pins:6; P Channel Gate Charge:8nC; Power Dissipation:-3mW; Power, Pd:2W; Voltage, Vds Max:200V; Max Output Current:2A
Parte # Mfg. Descripción Valores Precio
SI3475DV-T1-E3
DISTI # SI3475DV-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 200V 0.95A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI3475DV-T1-E3
    DISTI # SI3475DV-T1-E3CT-ND    		Vishay SiliconixMOSFET P-CH 200V 0.95A 6-TSOP
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI3475DV-T1-E3
      DISTI # SI3475DV-T1-E3DKR-ND      		Vishay SiliconixMOSFET P-CH 200V 0.95A 6-TSOP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI3475DV-T1-E3
        DISTI # 781-SI3475DV-T1-E3        		Vishay IntertechnologiesMOSFET 200V 0.95A 3.2W 1.61ohm @ 10V
        RoHS: Compliant        		0
          Imagen Parte # Descripción
          SI3475DV-T1-GE3

          Mfr.#: SI3475DV-T1-GE3

          OMO.#: OMO-SI3475DV-T1-GE3

          		 MOSFET RECOMMENDED ALT 781-SI3437DV-GE3
          SI3475DV-T1-E3

          Mfr.#: SI3475DV-T1-E3

          OMO.#: OMO-SI3475DV-T1-E3

          		 MOSFET 200V 0.95A 3.2W 1.61ohm @ 10V
          SI3475DV-T1-E3

          Mfr.#: SI3475DV-T1-E3

          OMO.#: OMO-SI3475DV-T1-E3-VISHAY

          		 MOSFET P-CH 200V 0.95A 6-TSOP
          SI3475DV-T1-GE3

          Mfr.#: SI3475DV-T1-GE3

          OMO.#: OMO-SI3475DV-T1-GE3-VISHAY

          		 MOSFET P-CH 200V 0.95A 6-TSOP
          Disponibilidad
          Valores:
          Available
          En orden:
          5000
          Ingrese la cantidad:
          El precio actual de SI3475DV-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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