SIR826DP-T1-GE3

SIR826DP-T1-GE3
Mfr. #:
SIR826DP-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 80V 60A PPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIR826DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIR826DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Tags
SIR826D, SIR826, SIR82, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR826DP Series 80 V 4.8 mOhm 60 nC SMT N-Channel MOSFET - POWERPAK-SO-8
***ical
Trans MOSFET N-CH 80V 60A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 80V 60A PPAK SO-8
***
N-CHANNEL 80-V (D-S)
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.004Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:104W; No. Of Pins:8Pins Rohs Compliant: Yes
***nell
MOSFET, N CH, DIO, 80V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
***ment14 APAC
MOSFET, N CH, DIO, 80V, 60A, PPK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Parte # Mfg. Descripción Valores Precio
SIR826DP-T1-GE3
DISTI # V72:2272_09216024
Vishay IntertechnologiesTrans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R
RoHS: Compliant
0
    SIR826DP-T1-GE3
    DISTI # V36:1790_09216024
    Vishay IntertechnologiesTrans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R
    RoHS: Compliant
    0
    • 3000000:$1.5540
    • 1500000:$1.5550
    • 300000:$1.5810
    • 30000:$1.6110
    • 3000:$1.6160
    SIR826DP-T1-GE3
    DISTI # SIR826DP-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CH 80V 60A PPAK SO-8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    5990In Stock
    • 1000:$1.4898
    • 500:$1.7980
    • 100:$2.1884
    • 10:$2.7230
    • 1:$3.0300
    SIR826DP-T1-GE3
    DISTI # SIR826DP-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CH 80V 60A PPAK SO-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    5990In Stock
    • 1000:$1.4898
    • 500:$1.7980
    • 100:$2.1884
    • 10:$2.7230
    • 1:$3.0300
    SIR826DP-T1-GE3
    DISTI # SIR826DP-T1-GE3TR-ND
    Vishay SiliconixMOSFET N-CH 80V 60A PPAK SO-8
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    3000In Stock
    • 6000:$1.2968
    • 3000:$1.3466
    SIR826DP-T1-GE3
    DISTI # SIR826DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR826DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$1.2180
    • 18000:$1.2516
    • 12000:$1.2873
    • 6000:$1.3418
    • 3000:$1.3828
    SIR826DP-T1-GE3
    DISTI # SIR826DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 80V 25A 8-Pin PowerPAK SO T/R (Alt: SIR826DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€1.0289
    • 18000:€1.0879
    • 12000:€1.2249
    • 6000:€1.4859
    • 3000:€2.1209
    SIR826DP-T1-GE3
    DISTI # 94T2658
    Vishay IntertechnologiesMOSFET, N CH, 80V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes0
    • 1000:$1.7700
    • 500:$2.0600
    • 250:$2.3600
    • 100:$2.6500
    • 50:$2.9300
    • 25:$3.1700
    • 1:$3.3300
    SIR826DP-T1-GE3.
    DISTI # 15AC4249
    Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:104W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 30000:$1.2200
    • 18000:$1.2600
    • 12000:$1.2900
    • 6000:$1.3500
    • 1:$1.3900
    SIR826DP-T1-GE3
    DISTI # 78-SIR826DP-T1-GE3
    Vishay IntertechnologiesMOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET
    RoHS: Compliant
    7407
    • 1:$2.9500
    • 10:$2.4500
    • 100:$1.9000
    • 500:$1.6600
    • 1000:$1.3700
    • 3000:$1.2800
    SIR826DP-T1-GE3Vishay IntertechnologiesMOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FETAmericas - 3000
    • 3000:$1.3080
    • 6000:$1.2650
    • 12000:$1.2020
    • 24000:$1.1650
    SIR826DP-T1-GE3.Vishay IntertechnologiesMOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET
    RoHS: Compliant
    Americas - 3000
    • 10:$2.2050
    • 100:$1.7110
    • 250:$1.6020
    • 500:$1.4940
    • 1000:$1.4580
    Imagen Parte # Descripción
    SIR826DP-T1-GE3

    Mfr.#: SIR826DP-T1-GE3

    OMO.#: OMO-SIR826DP-T1-GE3

    MOSFET 80V 4.8mOhm@10V 60A N-Ch MV T-FET
    SIR826DP-T1-RE3

    Mfr.#: SIR826DP-T1-RE3

    OMO.#: OMO-SIR826DP-T1-RE3

    MOSFET 80V Vds TrenchFET PowerPAK SO-8
    SIR826DP

    Mfr.#: SIR826DP

    OMO.#: OMO-SIR826DP-1190

    Nuevo y original
    SIR826DP-T1-GE3

    Mfr.#: SIR826DP-T1-GE3

    OMO.#: OMO-SIR826DP-T1-GE3-VISHAY

    MOSFET N-CH 80V 60A PPAK SO-8
    SIR826DP-T1-RE3

    Mfr.#: SIR826DP-T1-RE3

    OMO.#: OMO-SIR826DP-T1-RE3-VISHAY

    MOSFET N-CH 80V 60A POWERPAKSO-8
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de SIR826DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,75 US$
    1,75 US$
    10
    1,66 US$
    16,60 US$
    100
    1,57 US$
    157,28 US$
    500
    1,49 US$
    742,70 US$
    1000
    1,40 US$
    1 398,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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