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A3I35D012WNR1

A3I35D012WNR1
Mfr. #:
A3I35D012WNR1
Fabricante:
NXP Semiconductors
Descripción:
RF Amplifier A3I35D012WN/FM17F///REEL 13 Q2 DP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A3I35D012WNR1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
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T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
A3I35D012WNR1 más información A3I35D012WNR1 Product Details
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Amplificador de RF
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-270WB-17
Escribe:
Banda ancha
Frecuencia de operación:
3200 MHz to 4000 MHz
Ganar:
28.9 dB
Voltaje de suministro operativo:
28 V
Frecuencia de prueba:
3600 MHz
Corriente de suministro de funcionamiento:
260 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Carrete
Marca:
Semiconductores NXP
Número de canales:
2 Channel
Sensible a la humedad:
Yes
Tipo de producto:
Amplificador de RF
Cantidad de paquete de fábrica:
500
Subcategoría:
Circuitos integrados inalámbricos y RF
Parte # Alias:
935379914528
Tags
A3I3, A3I
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF High-Power Wideband Drivers
NXP Semiconductors RF High-Power Wideband Drivers provide macro cellular networks that simultaneously cover multiple cellular bands. These drivers come with a superior level of integration and functionality that enables high quality and high-speed network connectivity. The RF wideband drivers are designed for digital pre-distortion error correction systems and incorporate on-chip matching (50Ω input and DC blocked). These drivers are optimized for Doherty applications and wide instantaneous bandwidth applications.
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
Imagen Parte # Descripción
A3I35D025WNR1

Mfr.#: A3I35D025WNR1

OMO.#: OMO-A3I35D025WNR1

 RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
A3I35D012WNR1

Mfr.#: A3I35D012WNR1

OMO.#: OMO-A3I35D012WNR1

 RF Amplifier A3I35D012WN/FM17F///REEL 13 Q2 DP
A3I35D012WGNR1

Mfr.#: A3I35D012WGNR1

OMO.#: OMO-A3I35D012WGNR1

 RF Amplifier A3I35D012WGN/FM17F///REEL 13 Q2 DP
A3I35D025WGNR1

Mfr.#: A3I35D025WGNR1

OMO.#: OMO-A3I35D025WGNR1

 RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
A3I35D025WNR1

Mfr.#: A3I35D025WNR1

OMO.#: OMO-A3I35D025WNR1-1152

 Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V
A3I35D025GN

Mfr.#: A3I35D025GN

OMO.#: OMO-A3I35D025GN-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de A3I35D012WNR1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
36,07 US$
36,07 US$
5
35,70 US$
178,50 US$
10
33,27 US$
332,70 US$
25
31,78 US$
794,50 US$
100
28,41 US$
2 841,00 US$
250
27,10 US$
6 775,00 US$
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