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IRFH5302DTRPBF

IRFH5302DTRPBF
Mfr. #:
IRFH5302DTRPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 20V DUAL N / P CH 2.5mOhms 26nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFH5302DTRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH5302DTRPBF DatasheetIRFH5302DTRPBF Datasheet (P4-P6)IRFH5302DTRPBF Datasheet (P7-P9)
ECAD Model:
Más información:
IRFH5302DTRPBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PQFN-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
2.5 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
26 nC
Pd - Disipación de energía:
3.6 W
Configuración:
Único
Embalaje:
Carrete
Altura:
0.83 mm
Longitud:
6 mm
Tipo de transistor:
1 N-Channel
Ancho:
5 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
4000
Subcategoría:
MOSFET
Parte # Alias:
SP001570962
Tags
IRFH5302DT, IRFH5302D, IRFH5302, IRFH53, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 4000, N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN Infineon IRFH5302DTRPBF
***ure Electronics
Single N-Channel 30 V 2.5 mOhm 26 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ied Electronics & Automation
MOSFET, N-Channel, 30V FETky, 100A, 2.5 mOhm, 26 nC Qg, PQFN
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET with an integrated Schottky Diode in a 5mm X 6mm PQFN package
***ical
Trans MOSFET N-CH 30V 29A 8-Pin PQFN EP T/R
***i-Key
MOSFET N-CH 30V 29A 8VQFN
***nell
MOSFET, CAN N, 30V, 100A, 150°C, 104W;
***ment14 APAC
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:3.6W
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:3.6W;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
PQFN 5x6 Package HEXFET® Power MOSFETs
Infineon PQFN Package HEXFET Power MOSFETs are an addition to an extensive portfolio of devices featuring IR's latest low-voltage HEXFET MOSFET silicon in a PQFN package for low power applications including battery protection switch, secondary side synchronous rectification, inverter for DC motors, DC-DC brick, and boost converters. Featuring a very low on-state resistance (RDS(on)) to significantly cut conduction losses, these new power MOSFETs are available as 20V, 40V and 75V devices in N-Channel configurations. As a result of the low RDS(on) of this platform, these devices can be used to replace MOSFETs in larger packages to save board space and reduce system cost.Learn More
Parte # Mfg. Descripción Valores Precio
IRFH5302DTRPBF
DISTI # IRFH5302DTRPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 29A 8VQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.9615
IRFH5302DTRPBF
DISTI # IRFH5302DTRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 29A 8-Pin PQFN EP T/R (Alt: IRFH5302DTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.7746
  • 8000:$0.7428
  • 12000:$0.7328
  • 20000:$0.7042
  • 40000:$0.6952
  • 100000:$0.6778
  • 200000:$0.6613
IRFH5302DTRPBF
DISTI # IRFH5302DTRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 29A 8-Pin PQFN EP T/R - Tape and Reel (Alt: IRFH5302DTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.7459
  • 8000:$0.7189
  • 16000:$0.6929
  • 24000:$0.6699
  • 40000:$0.6579
IRFH5302DTRPBF
DISTI # 70019249		Infineon Technologies AGMOSFET,N-Channel,30V FETky,100A,2.5mOhm,26 nC Qg,PQFN
RoHS: Compliant		0
  • 4000:$1.5700
IRFH5302DTRPBF
DISTI # 942-IRFH5302DTRPBF		Infineon Technologies AGMOSFET 20V DUAL N / P CH 2.5mOhms 26nC
RoHS: Compliant		155
  • 1:$1.9100
  • 10:$1.6200
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$0.9390
  • 4000:$0.8420
  • 8000:$0.8100
IRFH5302DTRPBF
DISTI # 1300980P		Infineon Technologies AGMOSFET HEXFET N-CH 30V 29A PQFN8, RL1950
  • 25:£0.5360
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Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de IRFH5302DTRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,91 US$
1,91 US$
10
1,62 US$
16,20 US$
100
1,30 US$
130,00 US$
500
1,14 US$
570,00 US$
1000
0,94 US$
939,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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