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SI4946CDY-T1-GE3

SI4946CDY-T1-GE3
Mfr. #:
SI4946CDY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 60V Vds 20V Vgs SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4946CDY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4946CDY-T1-GE3 DatasheetSI4946CDY-T1-GE3 Datasheet (P4-P6)SI4946CDY-T1-GE3 Datasheet (P7)
ECAD Model:
Más información:
SI4946CDY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
6.1 A
Rds On - Resistencia de la fuente de drenaje:
51.6 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
2.4 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.8 W
Configuración:
Doble
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
Si4946CDY
Tipo de transistor:
2 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
17 S
Otoño:
20 ns
Tipo de producto:
MOSFET
Hora de levantarse:
35 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
14 ns
Tiempo típico de retardo de encendido:
17 ns
Tags
SI4946, SI494, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 5.2A 8-Pin SOIC N T/R
***et Europe
Trans MOSFET N-CH 60V 5.2A 8-Pin SOIC
***i-Key
MOSFET N-CHAN DUAL 60V SO-8
***ark
Mosfet, Dual N-Ch, 60V, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.033Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL N-CH, 60V, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:2.8W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, DOPPIO CA-N, 60V, SOIC; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:6.1A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.033ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:2.8W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SI4946CDY-T1-GE3
DISTI # V72:2272_21688014		Vishay IntertechnologiesSI4946CDY-T1-GE33681
  • 75000:$0.3232
  • 30000:$0.3274
  • 15000:$0.3317
  • 6000:$0.3360
  • 3000:$0.3402
  • 1000:$0.3604
  • 500:$0.4675
  • 250:$0.5313
  • 100:$0.5669
  • 50:$0.7125
  • 25:$0.7387
  • 10:$0.8362
  • 1:$0.9462
SI4946CDY-T1-GE3
DISTI # SI4946CDY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CHAN DUAL 60V SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2808In Stock
  • 1000:$0.3942
  • 500:$0.4993
  • 100:$0.6045
  • 10:$0.7750
  • 1:$0.8700
SI4946CDY-T1-GE3
DISTI # SI4946CDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CHAN DUAL 60V SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2808In Stock
  • 1000:$0.3942
  • 500:$0.4993
  • 100:$0.6045
  • 10:$0.7750
  • 1:$0.8700
SI4946CDY-T1-GE3
DISTI # SI4946CDY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CHAN DUAL 60V SO-8
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 25000:$0.3232
  • 12500:$0.3317
  • 5000:$0.3444
  • 2500:$0.3700
SI4946CDY-T1-GE3
DISTI # 27066269		Vishay IntertechnologiesSI4946CDY-T1-GE33681
  • 21:$0.9462
SI4946CDY-T1-GE3
DISTI # SI4946CDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 5.2A 8-Pin SOIC - Tape and Reel (Alt: SI4946CDY-T1-GE3)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.3109
  • 25000:$0.3199
  • 15000:$0.3289
  • 10000:$0.3429
  • 5000:$0.3529
SI4946CDY-T1-GE3
DISTI # SI4946CDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 5.2A 8-Pin SOIC (Alt: SI4946CDY-T1-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.3329
  • 500:€0.3389
  • 100:€0.3439
  • 50:€0.3579
  • 25:€0.3869
  • 10:€0.4499
  • 1:€0.6599
SI4946CDY-T1-GE3
DISTI # SI4946CDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 60V 5.2A 8-Pin SOIC (Alt: SI4946CDY-T1-GE3)
RoHS: Compliant
Min Qty: 5000		Asia - 0
    SI4946CDY-T1-GE3
    DISTI # 50AC9666    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 60V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6.1A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes12028
    • 1000:$0.3930
    • 500:$0.4910
    • 250:$0.5430
    • 100:$0.5950
    • 50:$0.6580
    • 25:$0.7210
    • 10:$0.7840
    • 1:$0.9800
    SI4946CDY-T1-GE3
    DISTI # 59AC7484    		Vishay IntertechnologiesDUAL N-CHANNEL 60-V (D-S) MOSFET0
    • 50000:$0.3140
    • 30000:$0.3280
    • 20000:$0.3530
    • 10000:$0.3770
    • 5000:$0.4090
    • 1:$0.4180
    SI4946CDY-T1-GE3
    DISTI # 78-SI4946CDY-T1-GE3    		Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs SO-8
    RoHS: Compliant    		9742
    • 1:$0.9600
    • 10:$0.7750
    • 100:$0.5880
    • 500:$0.4860
    • 1000:$0.3880
    • 2500:$0.3520
    • 5000:$0.3280
    • 10000:$0.3150
    • 25000:$0.3030
    SI4946CDY-T1-GE3
    DISTI # 2846626    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 60V, SOIC
    RoHS: Compliant    		12023
    • 1000:$0.5950
    • 500:$0.7530
    • 100:$0.9110
    • 5:$1.1700
    SI4946CDY-T1-GE3
    DISTI # 2846626    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 60V, SOIC12478
    • 500:£0.3740
    • 250:£0.4140
    • 100:£0.4530
    • 10:£0.6520
    • 1:£0.8540
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    Disponibilidad
    Valores:
    Available
    En orden:
    1992
    Ingrese la cantidad:
    El precio actual de SI4946CDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,96 US$
    0,96 US$
    10
    0,78 US$
    7,75 US$
    100
    0,59 US$
    58,80 US$
    500
    0,49 US$
    243,00 US$
    1000
    0,39 US$
    388,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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