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BSG0810NDIATMA1

BSG0810NDIATMA1
Mfr. #:
BSG0810NDIATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET 2N-CH 25V 19A/39A 8TISON
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSG0810NDIATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
INFINEON
categoria de producto
FET: matrices
Serie
OptiMOS
embalaje
Tape & Reel (TR)
Alias ​​de parte
BSG0810NDI SP001241674
Paquete-Estuche
8-PowerTDFN
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 155°C (TJ)
Tipo de montaje
Montaje superficial
Paquete de dispositivo de proveedor
PG-TISON-8
Tipo FET
2 N-Channel (Dual) Asymmetrical
Potencia máxima
2.5W
Drenaje-a-fuente-voltaje-Vdss
25V
Entrada-Capacitancia-Ciss-Vds
*
Función FET
Logic Level Gate, 4.5V Drive
Corriente-Continuo-Drenaje-Id-25 ° C
19A, 39A
Rds-On-Max-Id-Vgs
3 mOhm @ 20A, 10V
Vgs-th-Max-Id
2V @ 250μA
Puerta-Carga-Qg-Vgs
8.4nC @ 4.5V
Tags
BSG0810NDI, BSG0810, BSG08, BSG0, BSG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
OptiMOS™ 5 Power Block is a leadless SMD package in a 5, PG-TISON-8, RoHS
***et
Transistor MOSFET Array Dual N-CH 25V 50A 8-Pin TISON T/R
***ical
Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R
***i-Key
MOSFET 2N-CH 25V 19A/39A 8TISON
***ineon
OptiMOS 5 Power Block is a leadless SMD package in a 5.0x6.0mm package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. | Summary of Features: 50A max average load current; Source-down low side MOSFET for better PCB cooling; Internally connected low-side and high side (lowest loop inductance); High side Kelvin connection for more efficient driving | Benefits: Compact and simplified layout for a DC-DC converter; Optimized layout with lowest loop inductivity and best thermal performance | Target Applications: Desktop and server; Single-phase & multiphase POL; CPU/GPU regulation in notebooks & DDR memory; High power density voltage regulator
Parte # Mfg. Descripción Valores Precio
BSG0810NDIATMA1
DISTI # BSG0810NDIATMA1-ND		Infineon Technologies AGMOSFET 2N-CH 25V 19A/39A 8TISON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.1211
BSG0810NDIATMA1
DISTI # BSG0810NDIATMA1		Infineon Technologies AGTrans MOSFET N-CH 25V 19A/39A 10-Pin TISON8-4 T/R - Tape and Reel (Alt: BSG0810NDIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.1289
  • 10000:$1.0879
  • 20000:$1.0489
  • 30000:$1.0139
  • 50000:$0.9959
BSG0810NDIATMA1
DISTI # BSG0810NDI		Infineon Technologies AGTrans MOSFET N-CH 25V 19A/39A 10-Pin TISON8-4 T/R (Alt: BSG0810NDI)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 5000:$1.1200
  • 10000:$1.0889
  • 15000:$1.0595
  • 25000:$1.0316
  • 50000:$1.0182
  • 125000:$1.0051
  • 250000:$0.9924
BSG0810NDIATMA1
DISTI # 726-BSG0810NDIATMA1		Infineon Technologies AGMOSFET LV POWER MOS
RoHS: Compliant		4695
  • 1:$2.3100
  • 10:$1.9600
  • 100:$1.5700
  • 500:$1.3800
  • 1000:$1.1400
  • 2500:$1.0600
  • 5000:$1.0200
Imagen Parte # Descripción
BSG0810NDIATMA1

Mfr.#: BSG0810NDIATMA1

OMO.#: OMO-BSG0810NDIATMA1

 MOSFET LV POWER MOS
BSG0810ND

Mfr.#: BSG0810ND

OMO.#: OMO-BSG0810ND-1190

 Nuevo y original
BSG0810NDI

Mfr.#: BSG0810NDI

OMO.#: OMO-BSG0810NDI-1190

 Nuevo y original
BSG0810NDIATMA1

Mfr.#: BSG0810NDIATMA1

OMO.#: OMO-BSG0810NDIATMA1-INFINEON-TECHNOLOGIES

 MOSFET 2N-CH 25V 19A/39A 8TISON
BSG0810NDIATMA1-CUT TAPE

Mfr.#: BSG0810NDIATMA1-CUT TAPE

OMO.#: OMO-BSG0810NDIATMA1-CUT-TAPE-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de BSG0810NDIATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,41 US$
1,41 US$
10
1,34 US$
13,41 US$
100
1,27 US$
127,01 US$
500
1,20 US$
599,75 US$
1000
1,13 US$
1 129,00 US$
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