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STF24N60DM2

STF24N60DM2
Mfr. #:
STF24N60DM2
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP package
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STF24N60DM2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STF24N60DM2 más información STF24N60DM2 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
18 A
Rds On - Resistencia de la fuente de drenaje:
175 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
25 V
Qg - Carga de puerta:
29 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
30 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
MDmesh
Serie:
STF24N60DM2
Tipo de transistor:
1 N-Channel
Marca:
STMicroelectronics
Otoño:
15 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8.7 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
60 ns
Tiempo típico de retardo de encendido:
15 ns
Unidad de peso:
0.011640 oz
Tags
STF24N60, STF24N6, STF24N, STF24, STF2, STF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 600 V 0.2 O 30 W Flange Mount FDmesh II Plus Power Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
***enic
600V 18A 30W 200m´Î@10V9A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ark
MOSFET, N-CH, 600V, 18A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***icroelectronics
N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220 package
***ure Electronics
Single N-Channel 600 V 0.2 Ohm 29 nC 150 W Silicon Flange Mount Mosfet TO-220-3
***ical
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 18A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N-CH, 600V, 18A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***icroelectronics
N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220FP package
***ical
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Tube
***ark
Mosfet, N-Ch, 600V, 20A, 150Deg C, 30W Rohs Compliant: Yes
***ure Electronics
N-Channel 600V 20A (Tc) 30W (Tc) Through Hole TO-220FP
***icroelectronics SCT
Power MOSFETs, 600V, 20A, TO-220FP, Tube
***icroelectronics
N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220 package
***et
Power MOSFET, N-ch, MDmesh M2 EP, 600V, 20A, 3-pin (3+tab) TO-220, Tube
***i-Key
MOSFET N-CH 600V 20A TO220
***r Electronics
Power Field-Effect Transistor
***ark
Dfd Thyr Triac & Rectifier
***el Electronic
CAP CER 2.2UF 10V X7R RADIAL
***ical
Trans MOSFET N-CH Si 600V 21A 3-Pin(3+Tab) TO-220 Full-Pak
***el Electronic
VISHAY SIHA22N60E-E3 MOSFET, N CHANNEL, 600V, 21A, TO-220F
***et
E SERIES HIGH VOLTAGE THIN-LEAD TO-220 FULLPAK 9 POWER MOSFE
***id Electronics
Power Field-Effect Transistor 8A I(D) 600V
***ark
MOSFET, N CHANNEL, 600V, 21A, TO-220F; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F
***et
Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Rail
*** Stop Electro
Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N-CH, 600V, 20.6A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F
***ical
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Rail
***r Electronics
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N-CH, 600V, 20.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET family, utilizes advanced charge-balance technology for outstandingly low on-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dv/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.
MDmesh DM2 Power MOSFETs
STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descripción Valores Precio
STF24N60DM2
DISTI # 497-15115-5-ND		STMicroelectronicsMOSFET N-CH 600V 18A TO220FP
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$2.5950
  • 500:$3.0240
  • 100:$3.6675
  • 50:$3.9976
  • 1:$4.9100
STF24N60DM2
DISTI # STF24N60DM2		STMicroelectronicsTrans MOSFET N-CH 650V 18A 3-Pin TO-220 FP Tube - Rail/Tube (Alt: STF24N60DM2)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$2.1900
  • 2000:$2.0900
  • 4000:$1.9900
  • 6000:$1.8900
  • 10000:$1.8900
STF24N60DM2
DISTI # STF24N60DM2		STMicroelectronicsTrans MOSFET N-CH 650V 18A 3-Pin TO-220 FP Tube (Alt: STF24N60DM2)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€1.8900
  • 10:€1.6900
  • 25:€1.5900
  • 50:€1.4900
  • 100:€1.3900
  • 500:€1.3900
  • 1000:€1.2900
STF24N60DM2
DISTI # 45AC7567		STMicroelectronicsMOSFET, N-CH, 600V, 18A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.175ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes329
  • 1:$2.4500
STF24N60DM2
DISTI # 511-STF24N60DM2		STMicroelectronicsMOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP package
RoHS: Compliant		0
  • 1:$3.9700
  • 10:$3.3700
  • 100:$2.9200
  • 250:$2.7700
  • 500:$2.4900
  • 1000:$2.0900
STF24N60DM2
DISTI # STF24N60DM2		STMicroelectronicsTransistor: N-MOSFET,unipolar,600V,11A,30W,TO220FP40
  • 1:$3.5300
  • 5:$3.0300
  • 25:$2.4300
  • 100:$2.2000
STF24N60DM2
DISTI # 2807255		STMicroelectronicsMOSFET, N-CH, 600V, 18A, TO-220FP
RoHS: Compliant		580
  • 1000:$3.6600
  • 500:$4.3400
  • 100:$5.3600
  • 50:$5.8800
  • 1:$7.3100
STF24N60DM2
DISTI # 2807255		STMicroelectronicsMOSFET, N-CH, 600V, 18A, TO-220FP
RoHS: Compliant		600
  • 500:£2.1400
  • 250:£2.4000
  • 100:£2.6500
  • 10:£2.9000
  • 1:£4.0200
Imagen Parte # Descripción
STF24N60M6

Mfr.#: STF24N60M6

OMO.#: OMO-STF24N60M6

 MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a TO-220FP package
STF24N60M6

Mfr.#: STF24N60M6

OMO.#: OMO-STF24N60M6-STMICROELECTRONICS

 NCHANNEL 600 V 105 MOHM TYP. 22
STF24N60M2--

Mfr.#: STF24N60M2--

OMO.#: OMO-STF24N60M2---1190

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Mfr.#: STF2458

OMO.#: OMO-STF2458-1190

 Nuevo y original
STF2460K

Mfr.#: STF2460K

OMO.#: OMO-STF2460K-1190

 Nuevo y original
STF24N60DM2

Mfr.#: STF24N60DM2

OMO.#: OMO-STF24N60DM2-STMICROELECTRONICS

 MOSFET N-CH 600V 18A TO220FP
STF24N60M2

Mfr.#: STF24N60M2

OMO.#: OMO-STF24N60M2-STMICROELECTRONICS

 MOSFET N-CH 600V 18A TO220FP
STF24NM60N/IXFP22N65X2

Mfr.#: STF24NM60N/IXFP22N65X2

OMO.#: OMO-STF24NM60N-IXFP22N65X2-1190

 Nuevo y original
STF24NM65N

Mfr.#: STF24NM65N

OMO.#: OMO-STF24NM65N-STMICROELECTRONICS

 MOSFET N-CH 650V 19A TO-220FP
STF24NM65N,24NM65N

Mfr.#: STF24NM65N,24NM65N

OMO.#: OMO-STF24NM65N-24NM65N-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de STF24N60DM2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,97 US$
3,97 US$
10
3,37 US$
33,70 US$
100
2,92 US$
292,00 US$
250
2,77 US$
692,50 US$
500
2,49 US$
1 245,00 US$
1000
2,09 US$
2 090,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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