MRF9030LR1

MRF9030LR1
Mfr. #:
MRF9030LR1
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors 30W RF PWR FET NI-360L
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MRF9030LR1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
Si
Vds - Voltaje de ruptura de drenaje-fuente:
65 V
Ganar:
19 dB
Potencia de salida:
30 W
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
NI-360-3
Embalaje:
Carrete
Configuración:
Único
Altura:
4.45 mm
Longitud:
20.45 mm
Frecuencia de operación:
1 GHz
Serie:
MRF9030L
Escribe:
RF Power MOSFET
Ancho:
5.97 mm
Marca:
NXP / Freescale
Modo de canal:
Mejora
Pd - Disipación de energía:
92 W
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 0.5 V, 15 V
Vgs th - Voltaje umbral puerta-fuente:
2.9 V
Unidad de peso:
0.103628 oz
Tags
MRF9030LR, MRF9030L, MRF903, MRF90, MRF9, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
FET RF 68V 945MHZ NI-360 / RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
***et
Transistor RF FET N-CH 68V 945MHz 3-Pin NI-360 T/R
***nell
RF, MOSFET, N-CH, 945MHZ, 30W, NI360; Drain Source Voltage Vds:68V; Continuous Drain Current Id:100µA; Power Dissipation Pd:92W; No. of Pins:2Pins; MSL:-; SVHC:No SVHC (27-Jun-2018); Power Dissipation Max:92W; Transistor Type:RF FET
Parte # Mfg. Descripción Valores Precio
MRF9030LR1
DISTI # MRF9030LR1-ND
NXP SemiconductorsFET RF 68V 945MHZ NI-360
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
Limited Supply - Call
    MRF9030LR1
    DISTI # MRF9030LR1
    Avnet, Inc.Trans MOSFET N-CH 68V 3-Pin NI-360 T/R - Bulk (Alt: MRF9030LR1)
    RoHS: Compliant
    Min Qty: 9
    Container: Bulk
    Americas - 0
    • 90:$36.0900
    • 45:$36.7900
    • 27:$38.1900
    • 18:$39.6900
    • 9:$41.2900
    MRF9030LR1
    DISTI # 22M7949
    NXP SemiconductorsRF FET Transistor, 68 V, 100 A, 92 W0
      MRF9030LR1
      DISTI # 841-MRF9030LR1
      NXP SemiconductorsRF MOSFET Transistors 30W RF PWR FET NI-360L
      RoHS: Compliant
      0
        MRF9030LR1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
        RoHS: Compliant
        1191
        • 1000:$37.3700
        • 500:$39.3400
        • 100:$40.9500
        • 25:$42.7100
        • 1:$45.9900
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        OMO.#: OMO-MRF9030LR1-NXP-SEMICONDUCTORS

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        Disponibilidad
        Valores:
        Available
        En orden:
        5500
        Ingrese la cantidad:
        El precio actual de MRF9030LR1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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