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STI14NM65N

STI14NM65N
Mfr. #:
STI14NM65N
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-Ch, 650V-0.33ohms 12A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STI14NM65N Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
STI14NM65N más información STI14NM65N Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-262-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
12 A
Rds On - Resistencia de la fuente de drenaje:
380 mOhms
Vgs - Voltaje puerta-fuente:
25 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
125 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
8.95 mm
Longitud:
10 mm
Serie:
STB14NM65N
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
STMicroelectronics
Otoño:
20 ns
Tipo de producto:
MOSFET
Hora de levantarse:
13 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
55 ns
Tiempo típico de retardo de encendido:
11 ns
Unidad de peso:
0.050717 oz
Tags
STI14N, STI14, STI1, STI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V - 0.33 Y - 12 A - TO-220/FP- D2/I2PAK - TO-247 second generation MDmesh™ Power MOSFET
***i-Key
MOSFET N-CH 650V 12A I2PAK
***nell
MOSFET, N CH, 650V, 12A, I2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:125W; Transistor Case Style:SOT-226; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (17-Dec-2015); Current Id Max:12A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descripción Valores Precio
STI14NM65N
DISTI # STI14NM65N-ND		STMicroelectronicsMOSFET N-CH 650V 12A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    STI14NM65N
    DISTI # 511-STI14NM65N    		STMicroelectronicsMOSFET N-Ch, 650V-0.33ohms 12A
    RoHS: Compliant    		0
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      Mfr.#: STI14NM50N

      OMO.#: OMO-STI14NM50N-STMICROELECTRONICS

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      Mfr.#: STI14NM65N

      OMO.#: OMO-STI14NM65N-STMICROELECTRONICS

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      Mfr.#: STI14NM65N-H

      OMO.#: OMO-STI14NM65N-H-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de STI14NM65N es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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