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A2T21S260W12NR3

A2T21S260W12NR3
Mfr. #:
A2T21S260W12NR3
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 56 W Avg., 28 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A2T21S260W12NR3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
Polaridad del transistor:
Canal N
Tecnología:
Si
Id - Corriente de drenaje continua:
3.2 A
Vds - Voltaje de ruptura de drenaje-fuente:
- 500 mV, 65 V
Ganar:
17.9 dB
Potencia de salida:
56 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 125 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
OM-880X-2L2L
Embalaje:
Carrete
Frecuencia de operación:
2110 MHz to 2200 MHz
Escribe:
RF Power MOSFET
Marca:
NXP / Freescale
Número de canales:
1 Channel
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
250
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 6 V, 10 V
Vgs th - Voltaje umbral puerta-fuente:
1.2 V
Parte # Alias:
935339757528
Unidad de peso:
0.134366 oz
Tags
A2T21S2, A2T21S, A2T21, A2T2, A2T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Semiconductors SCT
Airfast RF Power LDMOS Transistor 2110-2200 MHz, 56 W Avg., 28 V, FM4F, RoHS
***el Electronic
IC POT DGTL 32-TAP NV SOT23-8
***i-Key
AIRFAST RF POWER LDMOS TRANSISTO
***et
2.1Hz 260W OM880-2L2L
***hardson RFPD
RF POWER TRANSISTOR
Parte # Mfg. Descripción Valores Precio
A2T21S260W12NR3
DISTI # A2T21S260W12NR3-ND		NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$67.6754
A2T21S260W12NR3
DISTI # A2T21S260W12NR3		Avnet, Inc.2.1Hz 260W OM880-2L2L - Tape and Reel (Alt: A2T21S260W12NR3)
RoHS: Compliant
Min Qty: 250
Container: Reel		Americas - 0
  • 2500:$64.6900
  • 1500:$65.8900
  • 1000:$68.3900
  • 500:$71.1900
  • 250:$74.0900
A2T21S260W12NR3
DISTI # 841-A2T21S260W12NR3		NXP SemiconductorsRF MOSFET Transistors A2T21S260W12N/FM4F///REEL 13 Q2 DP0
  • 250:$66.1600
A2T21S260W12NR3
DISTI # A2T21S260W12NR3		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 250:$76.3300
Imagen Parte # Descripción
A2T21S260-12SR3

Mfr.#: A2T21S260-12SR3

OMO.#: OMO-A2T21S260-12SR3

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 65 W Avg., 28 V
A2T21S260W12NR3

Mfr.#: A2T21S260W12NR3

OMO.#: OMO-A2T21S260W12NR3

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 56 W Avg., 28 V
A2T21S260-12SR3

Mfr.#: A2T21S260-12SR3

OMO.#: OMO-A2T21S260-12SR3-NXP-SEMICONDUCTORS

 IC TRANS RF LDMOS
A2T21S260W12N

Mfr.#: A2T21S260W12N

OMO.#: OMO-A2T21S260W12N-1190

 Nuevo y original
A2T21S260W12NR3

Mfr.#: A2T21S260W12NR3

OMO.#: OMO-A2T21S260W12NR3-NXP-SEMICONDUCTORS

 AIRFAST RF POWER LDMOS TRANSISTO
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de A2T21S260W12NR3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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