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IPB26CN10NGATMA1

IPB26CN10NGATMA1
Mfr. #:
IPB26CN10NGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 100V 35A TO263-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB26CN10NGATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IPB26CN10NG, IPB26CN10N, IPB26CN1, IPB26C, IPB26, IPB2, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 100V 35A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 100V 35A TO263-3
*** Electronics
OPTLMOS N-CHANNEL POWER MOSFET
***i-Key
MOSFET N-CH 100V 38A D2PAK
***ser
MOSFETs 38a,100V, 0.036 Ohm Logic Level N-Ch
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 100V 38A D2PAK
***ser
MOSFETs 38a,100V, 0.036 Ohm Logic Level N-Ch
***ical
Trans MOSFET N-CH 100V 47A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
100V, N-Ch, 26 mΩ max, Automotive MOSFET, D2PAK, SIPMOS™, PG-TO263-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Summary of Features: N-Channel; Enhancement mode; Logic Level; 175C operating temperature; Avalanche rated; dv/dt rated; Green Package (lead free) | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
***et
Trans MOSFET N-CH 100V 51A 3-Pin(2+Tab) TO-263AB Rail
***inecomponents.com
PWR MOS ULTRAFET 100V/51A 0.028 OHMS N-CH LL TO-263AB
***ser
MOSFETs 50a,100V, 0.027 Ohm Logic Level N-Ch
***nsix Microsemi
Power Field-Effect Transistor, 51A I(D), 100V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
Single N-Channel 100 V 26.3 mOhm 30 nC OptiMOS™ Power Mosfet - D2PAK
***ineon SCT
100V, N-Ch, 26.3 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS
***p One Stop
Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) TO-263 T/R
***nell
MOSFET, AEC-Q101, N-CH, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0203ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.
*** Stop Electro
Power Field-Effect Transistor, 35A I(D), 100V, 0.0322ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
***i-Key
MOSFET N-CH 100V 28A D2PAK
***Yang
N-CH/100V/28A/0.052OHM - Bulk
***ser
MOSFETs 100V N-Channel A-FET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):52mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
IPB26CN10NGATMA1
DISTI # IPB26CN10NGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 35A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB26CN10NGATMA1
    DISTI # IPB26CN10NGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin TO-263 T/R - Bulk (Alt: IPB26CN10NGATMA1)
    Min Qty: 642
    Container: Bulk    		Americas - 0
    • 6420:$0.4949
    • 3210:$0.5039
    • 1926:$0.5219
    • 1284:$0.5409
    • 642:$0.5609
    IPB26CN10NGATMA1
    DISTI # SP000277692    		Infineon Technologies AGTrans MOSFET N-CH 100V 35A 3-Pin TO-263 T/R (Alt: SP000277692)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel    		Europe - 0
    • 1000:€0.5169
    • 500:€0.5269
    • 100:€0.5419
    • 50:€0.5519
    • 25:€0.6339
    • 10:€0.7589
    • 1:€0.9049
    IPB26CN10N G
    DISTI # 726-IPB26CN10NG    		Infineon Technologies AGMOSFET N-Ch 100V 35A D2PAK-2
    RoHS: Compliant    		0
      IPB26CN10NGATMA1Infineon Technologies AGPower Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Not Compliant      		15000
      • 1000:$0.5100
      • 500:$0.5400
      • 100:$0.5600
      • 25:$0.5900
      • 1:$0.6300
      Imagen Parte # Descripción
      IPB26CN10

      Mfr.#: IPB26CN10

      OMO.#: OMO-IPB26CN10-1190

      		 Nuevo y original
      IPB26CN10N

      Mfr.#: IPB26CN10N

      OMO.#: OMO-IPB26CN10N-1190

      		 - Bulk (Alt: IPB26CN10N)
      IPB26CN10N G

      Mfr.#: IPB26CN10N G

      OMO.#: OMO-IPB26CN10N-G-1190

      		 MOSFET N-Ch 100V 35A D2PAK-2
      IPB26CN10NG

      Mfr.#: IPB26CN10NG

      OMO.#: OMO-IPB26CN10NG-1190

      		 Nuevo y original
      IPB26CN10NG(IRF540NS)

      Mfr.#: IPB26CN10NG(IRF540NS)

      OMO.#: OMO-IPB26CN10NG-IRF540NS--1190

      		 Nuevo y original
      IPB26CN10NG,26CN10N

      Mfr.#: IPB26CN10NG,26CN10N

      OMO.#: OMO-IPB26CN10NG-26CN10N-1190

      		 Nuevo y original
      IPB26CN10NGATMA1

      Mfr.#: IPB26CN10NGATMA1

      OMO.#: OMO-IPB26CN10NGATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 100V 35A TO263-3
      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de IPB26CN10NGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,74 US$
      0,74 US$
      10
      0,71 US$
      7,05 US$
      100
      0,67 US$
      66,81 US$
      500
      0,63 US$
      315,50 US$
      1000
      0,59 US$
      593,90 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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