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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BSC160N10NS3GATMA1 DISTI # BSC160N10NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 42A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 14918In Stock |
|
| BSC160N10NS3GATMA1 DISTI # BSC160N10NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 42A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 14918In Stock |
|
| BSC160N10NS3GATMA1 DISTI # BSC160N10NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 42A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 10000In Stock |
|
| BSC160N10NS3G DISTI # BSC160N10NS3 G | Infineon Technologies AG | Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON T/R (Alt: BSC160N10NS3 G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 |
|
| BSC160N10NS3GXT DISTI # BSC160N10NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON EP - Tape and Reel (Alt: BSC160N10NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC160N10NS3GATMA1. DISTI # 23AC2920 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:42A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0139ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:60W,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| BSC160N10NS3GATMA1 DISTI # 47Y7999 | Infineon Technologies AG | MOSFET Transistor, N Channel, 42 A, 100 V, 0.0139 ohm, 10 V, 2.7 V RoHS Compliant: Yes | 0 |
|
| BSC160N10NS3 G DISTI # 726-BSC160N10NS3G | Infineon Technologies AG | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 RoHS: Compliant | 78 |
|
| BSC160N10NS3GATMA1 DISTI # 726-BSC160N10NS3GATM | Infineon Technologies AG | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 RoHS: Compliant | 317 |
|
| BSC160N10NS3GATMA1 DISTI # 8259250P | Infineon Technologies AG | MOSFET N-CH 8.8A 100V OPTIMOS3 TDSON8EP, RL | 550 |
|
| BSC160N10NS3GATMA1 DISTI # BSC160N10NS3GATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,100V,42A,60W,PG-TDSON-8 | 833 |
|
| BSC160N10NS3G | Infineon Technologies AG | 2726 | ||
| BSC160N10NS3G | Infineon Technologies AG | 100V,16m,42A,N-Channel Power MOSFET | 500 |
|
| BSC160N10NS3GATMA1 DISTI # 2443424 | Infineon Technologies AG | MOSFET, N CH, 100V, 42A, TDSON-8 RoHS: Compliant | 2621 |
|
| BSC160N10NS3GATMA1 DISTI # 2443424 | Infineon Technologies AG | MOSFET, N CH, 100V, 42A, TDSON-8 RoHS: Compliant | 2631 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: BSC160N15NS5ATMA1 OMO.#: OMO-BSC160N15NS5ATMA1 |
MOSFET MV POWER MOS |
|
|
Mfr.#: BSC160N10NS3GATMA1 OMO.#: OMO-BSC160N10NS3GATMA1 |
MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC160N10NS3 G OMO.#: OMO-BSC160N10NS3-G |
MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSC160N10NS OMO.#: OMO-BSC160N10NS-1190 |
Nuevo y original |
|
|
Mfr.#: BSC160N10NS3 G OMO.#: OMO-BSC160N10NS3-G-1190 |
MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC160N10NS3G OMO.#: OMO-BSC160N10NS3G-1190 |
Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON T/R (Alt: BSC160N10NS3 G) |
|
|
Mfr.#: BSC160N10NS3GATMA1 , TDZ |
Nuevo y original |
|
Mfr.#: BSC160N10NS3GATMA1 |
MOSFET N-CH 100V 42A TDSON-8 |
|
|
Mfr.#: BSC160N15NS5ATMA1 |
MOSFET N-CH 150V 56A 8TDSON |
