STGWT80V60DF

STGWT80V60DF
Mfr. #:
STGWT80V60DF
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors Trench gte FieldStop IGBT 600V 80A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGWT80V60DF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
STGWT80V60DF más información STGWT80V60DF Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-3P
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.85 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
120 A
Pd - Disipación de energía:
469 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGWT80V60DF
Embalaje:
Tubo
Corriente continua de colector Ic Max:
80 A
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
300
Subcategoría:
IGBT
Unidad de peso:
0.238311 oz
Tags
STGWT8, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    D***v
    D***v
    RU

    Set

    2019-01-18
    P***v
    P***v
    RU

    Very long

    2019-03-05
***va Crawler
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
***ical
Trans IGBT Chip N-CH 600V 120A 469000mW 3-Pin(3+Tab) TO-3P Tube
***et Europe
Trans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube
***ment14 APAC
IGBT, SINGLE, 600V, 120A, TO-3P-3
***i-Key
IGBT 600V 120A 469W TO-3P
***ark
Igbt, Single, 600V, 120A, To-3P-3; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:469W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-3P; No. Of Pins:3Pins; Rohs Compliant: Yes
IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.
Parte # Mfg. Descripción Valores Precio
STGWT80V60DF
DISTI # 497-14563-5-ND
STMicroelectronicsIGBT 600V 120A 469W TO-3P
RoHS: Compliant
Min Qty: 1
Container: Tube
1In Stock
  • 510:$5.6800
  • 120:$6.5228
  • 30:$7.5123
  • 10:$7.8790
  • 1:$8.7200
STGWT80V60DF
DISTI # STGWT80V60DF
STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube (Alt: STGWT80V60DF)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€3.4900
  • 500:€3.6900
  • 100:€3.8900
  • 50:€3.9900
  • 25:€4.1900
  • 10:€4.3900
  • 1:€4.7900
STGWT80V60DF
DISTI # STGWT80V60DF
STMicroelectronicsTrans IGBT Chip N-CH 600V 120A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT80V60DF)
RoHS: Compliant
Min Qty: 300
Container: Tube
Americas - 0
  • 3000:$4.3900
  • 1500:$4.4900
  • 900:$4.6900
  • 600:$4.8900
  • 300:$5.1900
STGWT80V60DF
DISTI # 98Y2475
STMicroelectronicsIGBT, SINGLE, 600V, 120A, TO-3P-3,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-3P,No. of Pins:3Pins,RoHS Compliant: Yes298
  • 500:$5.4600
  • 250:$5.9900
  • 100:$6.2700
  • 50:$6.7500
  • 25:$7.2200
  • 10:$7.5800
  • 1:$8.3800
STGWT80V60DF
DISTI # 511-STGWT80V60DF
STMicroelectronicsIGBT Transistors Trench gte FieldStop IGBT 600V 80A
RoHS: Compliant
69
  • 1:$8.3000
  • 10:$7.5000
  • 25:$7.1500
  • 100:$6.2100
  • 250:$5.9300
  • 500:$5.4100
  • 1000:$4.7100
STGWT80V60DF
DISTI # 2629743
STMicroelectronicsIGBT, SINGLE, 600V, 120A, TO-3P-3
RoHS: Compliant
294
  • 1:$13.2100
STGWT80V60DF
DISTI # 2629743
STMicroelectronicsIGBT, SINGLE, 600V, 120A, TO-3P-3
RoHS: Compliant
294
  • 100:£5.7200
  • 50:£5.7300
  • 10:£5.7400
  • 5:£5.7500
  • 1:£6.1900
Imagen Parte # Descripción
STGWT80H65DFB

Mfr.#: STGWT80H65DFB

OMO.#: OMO-STGWT80H65DFB

IGBT Transistors Trench gate H series 650V 80A HiSpd
STGWT80V60F

Mfr.#: STGWT80V60F

OMO.#: OMO-STGWT80V60F

IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
STGWT80V60DF

Mfr.#: STGWT80V60DF

OMO.#: OMO-STGWT80V60DF

IGBT Transistors Trench gte FieldStop IGBT 600V 80A
STGWT80H65FB

Mfr.#: STGWT80H65FB

OMO.#: OMO-STGWT80H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
STGWT80V60DF

Mfr.#: STGWT80V60DF

OMO.#: OMO-STGWT80V60DF-STMICROELECTRONICS

IGBT Transistors Trench gte FieldStop IGBT 600V 80A
STGWT80H65DFB

Mfr.#: STGWT80H65DFB

OMO.#: OMO-STGWT80H65DFB-STMICROELECTRONICS

IGBT 650V 120A 469W TO3P-3L
STGWT80V60F

Mfr.#: STGWT80V60F

OMO.#: OMO-STGWT80V60F-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
STGWT80H65FB

Mfr.#: STGWT80H65FB

OMO.#: OMO-STGWT80H65FB-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
Disponibilidad
Valores:
69
En orden:
2052
Ingrese la cantidad:
El precio actual de STGWT80V60DF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
8,30 US$
8,30 US$
10
7,50 US$
75,00 US$
25
7,15 US$
178,75 US$
100
6,21 US$
621,00 US$
250
5,93 US$
1 482,50 US$
500
5,41 US$
2 705,00 US$
1000
4,71 US$
4 710,00 US$
2500
4,53 US$
11 325,00 US$
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