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STW30N65M5

STW30N65M5
Mfr. #:
STW30N65M5
Fabricante:
STMicroelectronics
Descripción:
MOSFET POWER MOSFET N-CH 650V 22 A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STW30N65M5 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STW30N65M5 más información STW30N65M5 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
22 A
Rds On - Resistencia de la fuente de drenaje:
139 mOhms
Vgs th - Voltaje umbral puerta-fuente:
5 V
Vgs - Voltaje puerta-fuente:
3 V
Qg - Carga de puerta:
64 nC
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
140 W
Configuración:
Único
Nombre comercial:
MDmesh
Embalaje:
Tubo
Serie:
STW30N65M5
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET de potencia MDmesh V
Marca:
STMicroelectronics
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8 ns
Cantidad de paquete de fábrica:
600
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
50 ns
Tiempo típico de retardo de encendido:
50 ns
Unidad de peso:
1.340411 oz
Tags
STW30N, STW30, STW3, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET TO-247
***th Star Micro
Transistor MOSFET N-CH 650V 22A 3-Pin (3+Tab) TO-247 Tube
***ark
MOSFET, N-CH, 650V, 22A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 22A I(D), 650V, 0.139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-247
***et Europe
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube
*** Electronic Components
MOSFET POWER MOSFET N-CH 650V 24 A
***r Electronics
Power Field-Effect Transistor, 24A I(D), 650V, 0.119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***et
STMICROELECTRONICS STW32N65M5 MOSFETS
***icroelectronics
N-channel 650 V, 0.09 Ohm, 28 A MDmesh(TM) V Power MOSFET in TO-247 package
***ical
Trans MOSFET N-CH 650V 28A 3-Pin(3+Tab) TO-247 Tube
***el Electronic
Processor Supervisor 4.65V 4.75V to 5.5V Automotive 16-Pin SOIC N Tube
***ure Electronics
N-Channel 650 V 28 A 110 mOhm Through Hole MDmesh™ V Power Mosfet - TO-247-3
*** Electronic Components
MOSFET N-Ch 650 V 0.098 Ohm 29 A MDmesh M5
***r Electronics
Power Field-Effect Transistor, 28A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***enic
650V 28A 90m´Î@10V14A 190W 4V@250uA 6.3pF@100V N Channel 2.7nF@100V 62.5nC@10V +150¡Í@(Tj) TO-247-3 MOSFETs ROHS
***S
French Electronic Distributor since 1988
***icroelectronics SCT
Power MOSFETs, 650V, 29A, TO-247, Tube
***icroelectronics
N-channel 650 V, 0.085 Ohm, 27 A, MDmesh(TM) V Power MOSFET in TO-247
*** Source Electronics
Trans MOSFET N-CH Si 650V 27A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 650V 27A TO-247
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 27A I(D), 650V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***roFlash
Single N-Channel 650 V 150 mOhm 86 nC CoolMOS¬ô Power Mosfet - TO-247-3
***ment14 APAC
MOSFET, N-CH, 650V, 22.4A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Source Voltage Vds:650V; On Resistance
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 25 A, 126 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 25A I(D), 600V, 0.126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***ment14 APAC
MOSFET, N CH, 600V, 25A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.108ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:75A
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ical
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
N-channel MDmesh V Power MOSFET
STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products offering greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules. 
STM MDmeshV Power MOSFETs - Thru-Hole
Parte # Mfg. Descripción Valores Precio
STW30N65M5
DISTI # V79:2366_17777324		STMicroelectronicsTrans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		1067
  • 500:$5.5679
  • 250:$6.1529
  • 100:$6.6480
  • 25:$7.5580
  • 10:$8.0420
  • 1:$9.8329
STW30N65M5
DISTI # V36:1790_06567952		STMicroelectronicsTrans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 600000:$4.4030
  • 300000:$4.4090
  • 60000:$5.2880
  • 6000:$7.1670
  • 600:$7.5000
STW30N65M5
DISTI # 497-10655-5-ND		STMicroelectronicsMOSFET N-CH 650V 22A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 510:$6.1519
  • 120:$7.0648
  • 30:$8.1363
  • 10:$8.5330
  • 1:$9.4500
STW30N65M5
DISTI # 26111732		STMicroelectronicsTrans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		1067
  • 2:$9.8329
STW30N65M5
DISTI # STW30N65M5		STMicroelectronicsTrans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STW30N65M5)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 6000:$4.7900
  • 3600:$4.8900
  • 2400:$5.0900
  • 1200:$5.3900
  • 600:$5.5900
STW30N65M5
DISTI # STW30N65M5		STMicroelectronicsTrans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-247 Tube (Alt: STW30N65M5)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.5900
  • 500:€2.7900
  • 100:€2.8900
  • 50:€3.0900
  • 25:€3.1900
  • 10:€3.2900
  • 1:€3.5900
STW30N65M5
DISTI # 45AC7785		STMicroelectronicsTrans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-247 Tube - Bulk (Alt: 45AC7785)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 500:$6.1400
  • 250:$6.4700
  • 100:$7.6600
  • 50:$8.1500
  • 25:$8.6400
  • 10:$9.0100
  • 1:$9.8500
STW30N65M5
DISTI # 45AC7785		STMicroelectronicsMOSFET, N-CH, 650V, 22A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,No. of Pins:3PinsRoHS Compliant: Yes134
  • 1:$3.9500
  • 10:$3.9500
  • 25:$3.9500
  • 50:$3.9500
  • 100:$3.9500
  • 250:$3.9500
  • 500:$3.9500
STW30N65M5.
DISTI # 32AC3706		STMicroelectronicsPTD HIGH VOLTAGE ROHS COMPLIANT: YES0
  • 500:$5.8900
  • 250:$6.2000
  • 100:$7.3300
  • 50:$7.8100
  • 25:$8.4500
  • 10:$8.8100
  • 1:$9.6300
STW30N65M5
DISTI # 511-STW30N65M5		STMicroelectronicsMOSFET POWER MOSFET N-CH 650V 22 A
RoHS: Compliant		0
  • 1:$8.9900
  • 10:$8.1200
  • 25:$7.7500
  • 100:$6.7200
  • 250:$6.4200
  • 500:$5.8500
  • 1000:$5.1000
STW30N65M5
DISTI # 7610317P		STMicroelectronicsMOSFET N-CHANNEL 650V 22A TO247, TU192
  • 10:£5.8800
STW30N65M5
DISTI # 2807324		STMicroelectronicsMOSFET, N-CH, 650V, 22A, TO-24730
  • 500:£4.5000
  • 250:£4.9500
  • 100:£5.1800
  • 10:£5.9700
  • 1:£7.4900
STW30N65M5
DISTI # 2807324		STMicroelectronicsMOSFET, N-CH, 650V, 22A, TO-247
RoHS: Compliant		1
  • 510:$9.2800
  • 120:$10.6500
  • 30:$12.2700
  • 10:$12.8600
  • 1:$14.2400
Imagen Parte # Descripción
IXDN609PI

Mfr.#: IXDN609PI

OMO.#: OMO-IXDN609PI

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BTW69-800RG

Mfr.#: BTW69-800RG

OMO.#: OMO-BTW69-800RG

 SCRs 50 Amp 800 Volt
TYN840RG

Mfr.#: TYN840RG

OMO.#: OMO-TYN840RG

 SCRs 40 Amp 800 Volt
IRG4PC40KDPBF

Mfr.#: IRG4PC40KDPBF

OMO.#: OMO-IRG4PC40KDPBF

 IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT
STW45N65M5

Mfr.#: STW45N65M5

OMO.#: OMO-STW45N65M5

 MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
LM5009MM/NOPB

Mfr.#: LM5009MM/NOPB

OMO.#: OMO-LM5009MM-NOPB

 Switching Voltage Regulators 100V 250Ma Switching Reg
TYN840RG

Mfr.#: TYN840RG

OMO.#: OMO-TYN840RG-STMICROELECTRONICS

 SCRs 40 Amp 800 Volt
IXDN609PI

Mfr.#: IXDN609PI

OMO.#: OMO-IXDN609PI-IXYS-INTEGRATED-CIRCUITS-DIVIS

 Gate Drivers 9-Ampere Low-Side Ultrafast MOSFET
43650-0226

Mfr.#: 43650-0226

OMO.#: OMO-43650-0226-410

 Headers & Wire Housings MicroFit 3.0 SR V SMT Nail 30Au 2Ckt
NTE0505MC

Mfr.#: NTE0505MC

OMO.#: OMO-NTE0505MC-MURATA-POWER-SOLUTIONS

 Isolated DC/DC Converters 1W Single Output 5V to 5V 200mA
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de STW30N65M5 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
8,99 US$
8,99 US$
10
8,12 US$
81,20 US$
25
7,75 US$
193,75 US$
100
6,72 US$
672,00 US$
250
6,42 US$
1 605,00 US$
500
5,85 US$
2 925,00 US$
1000
5,10 US$
5 100,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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