SQJ848EP-T1_GE3

SQJ848EP-T1_GE3
Mfr. #:
SQJ848EP-T1_GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 40V 47A POWERPAKSO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SQJ848EP-T1_GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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HTML Datasheet:
SQJ848EP-T1_GE3 DatasheetSQJ848EP-T1_GE3 Datasheet (P4-P6)SQJ848EP-T1_GE3 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
Chips de IC
Serie
Serie SQ
embalaje
Carrete
Alias ​​de parte
SQJ848EP-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET
Paquete-Estuche
SO-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
68 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
30 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Resistencia a la fuente de desagüe de Rds
9 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
15 nC
Tags
SQJ848E, SQJ848, SQJ84, SQJ8, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 30 A, 40 V, 0.007 Ohm, 10 V, 2 V
***ical
Trans MOSFET N-CH 40V 47A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
***ment14 APAC
MOSFET,N CH,W DIODE,40V,30A,POPAK8L; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:68W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Voltage Vgs Max:20V
Parte # Mfg. Descripción Valores Precio
SQJ848EP-T1-GE3
DISTI # V36:1790_14140413
Vishay IntertechnologiesTrans MOSFET N-CH 40V 47A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
RoHS: Compliant
0
  • 3000000:$0.6627
  • 1500000:$0.6629
  • 300000:$0.6803
  • 30000:$0.7096
  • 3000:$0.7144
SQJ848EP-T1_GE3
DISTI # SQJ848EP-T1_GE3CT-ND
Vishay SiliconixMOSFET N-CH 40V 47A POWERPAKSO-8
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)
2983In Stock
  • 1000:$0.7621
  • 500:$0.9198
  • 100:$1.1195
  • 10:$1.3930
  • 1:$1.5500
SQJ848EP-T1_GE3
DISTI # SQJ848EP-T1_GE3DKR-ND
Vishay SiliconixMOSFET N-CH 40V 47A POWERPAKSO-8
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®
2983In Stock
  • 1000:$0.7621
  • 500:$0.9198
  • 100:$1.1195
  • 10:$1.3930
  • 1:$1.5500
SQJ848EP-T1_GE3
DISTI # SQJ848EP-T1_GE3TR-ND
Vishay SiliconixMOSFET N-CH 40V 47A POWERPAKSO-8
RoHS: Not compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 15000:$0.6532
  • 6000:$0.6787
  • 3000:$0.7144
SQJ848EP-T1_GE3
DISTI # SQJ848EP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 21.7A 5-Pin(4+Tab) PowerPAK SO T/R (Alt: SQJ848EP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.5529
  • 18000:€0.5779
  • 12000:€0.6539
  • 6000:€0.8069
  • 3000:€1.1249
SQJ848EP-T1_GE3
DISTI # SQJ848EP-T1_GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 21.7A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ848EP-T1_GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.6229
  • 18000:$0.6399
  • 12000:$0.6579
  • 6000:$0.6859
  • 3000:$0.7069
SQJ848EP-T1_GE3
DISTI # 20AC4038
Vishay IntertechnologiesN-CHANNEL 40-V (D-S) 175C MOSFET0
  • 10000:$0.6180
  • 6000:$0.6320
  • 4000:$0.6570
  • 2000:$0.7290
  • 1000:$0.8020
  • 1:$0.8360
SQJ848EP-T1-GE3
DISTI # 78-SQJ848EP-T1-GE3
Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQJ858AEP-T1_GE3
RoHS: Compliant
0
    Imagen Parte # Descripción
    SQJ848EP-T1-GE3

    Mfr.#: SQJ848EP-T1-GE3

    OMO.#: OMO-SQJ848EP-T1-GE3

    MOSFET RECOMMENDED ALT 78-SQJ858AEP-T1_GE3
    SQJ848EP-T1-GE3

    Mfr.#: SQJ848EP-T1-GE3

    OMO.#: OMO-SQJ848EP-T1-GE3-126

    IGBT Transistors MOSFET 40V 30A 68W N-Ch Automotive
    SQJ848EP-T1_GE3

    Mfr.#: SQJ848EP-T1_GE3

    OMO.#: OMO-SQJ848EP-T1-GE3-VISHAY

    MOSFET N-CH 40V 47A POWERPAKSO-8
    SQJ848EP

    Mfr.#: SQJ848EP

    OMO.#: OMO-SQJ848EP-1190

    Nuevo y original
    SQJ848EPT1-GE3

    Mfr.#: SQJ848EPT1-GE3

    OMO.#: OMO-SQJ848EPT1-GE3-1190

    Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de SQJ848EP-T1_GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,93 US$
    0,93 US$
    10
    0,88 US$
    8,81 US$
    100
    0,83 US$
    83,43 US$
    500
    0,79 US$
    394,00 US$
    1000
    0,74 US$
    741,60 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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