STGW60H65DFB-4

STGW60H65DFB-4
Mfr. #:
STGW60H65DFB-4
Fabricante:
STMicroelectronics
Descripción:
PTD HIGH VOLTAGE (Alt: STGW60H65DFB-4)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGW60H65DFB-4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
STGW60H65DFB-4 más información STGW60H65DFB-4 Product Details
Atributo del producto
Valor de atributo
Tags
STGW60H65DF, STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trench gate field-stop IGBT, HB series650 V, 60 A high speed
***et Europe
PTD HIGH VOLTAGE
***ark
IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
TBGI, SINGOLO, 650V, 80A, TO-247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:375W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:4Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
Parte # Mfg. Descripción Valores Precio
STGW60H65DFB-4
DISTI # STGW60H65DFB-4-ND
STMicroelectronicsIGBT
RoHS: Not compliant
Min Qty: 600
Container: Tube
Temporarily Out of Stock
  • 600:$5.6963
STGW60H65DFB-4
DISTI # STGW60H65DFB-4
STMicroelectronicsPTD HIGH VOLTAGE (Alt: STGW60H65DFB-4)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 500:€4.5900
  • 1000:€4.5900
  • 100:€4.6900
  • 50:€4.7900
  • 25:€4.8900
  • 10:€5.0900
  • 1:€5.1900
STGW60H65DFB-4
DISTI # STGW60H65DFB-4
STMicroelectronicsPTD HIGH VOLTAGE - Trays (Alt: STGW60H65DFB-4)
RoHS: Compliant
Min Qty: 600
Container: Tray
Americas - 0
  • 6000:$4.1900
  • 3000:$4.2900
  • 1800:$4.3900
  • 1200:$4.4900
  • 600:$4.5900
STGW60H65DFB-4
DISTI # 48AC3296
STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$4.3800
STGW60H65DFB-4
DISTI # 511-STGW60H65DFB-4
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed0
  • 1:$8.3300
  • 10:$7.5300
  • 25:$7.1800
  • 100:$6.2300
  • 250:$5.9600
  • 500:$5.4300
  • 1000:$4.7300
STGW60H65DFB-4
DISTI # 2778105
STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant
74
  • 250:$7.3700
  • 100:$7.9000
  • 50:$8.8700
  • 10:$9.8800
  • 5:$11.1400
  • 1:$12.7800
STGW60H65DFB-4
DISTI # 2778105
STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-24774
  • 100:£4.5100
  • 50:£4.8600
  • 10:£5.2100
  • 5:£5.6200
  • 1:£6.0300
Imagen Parte # Descripción
STGW60H65FB

Mfr.#: STGW60H65FB

OMO.#: OMO-STGW60H65FB

IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT
STGW60H65DRF

Mfr.#: STGW60H65DRF

OMO.#: OMO-STGW60H65DRF

IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
STGW60H60DLFB

Mfr.#: STGW60H60DLFB

OMO.#: OMO-STGW60H60DLFB

IGBT Transistors 600V 60A trench gate field-stop IGBT
STGW60H65DF

Mfr.#: STGW60H65DF

OMO.#: OMO-STGW60H65DF

IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
STGW60H65DFB-4

Mfr.#: STGW60H65DFB-4

OMO.#: OMO-STGW60H65DFB-4

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
STGW60H65F

Mfr.#: STGW60H65F

OMO.#: OMO-STGW60H65F

IGBT Transistors 60A 650V FST IGBT Very High Switching
STGW60H65FB

Mfr.#: STGW60H65FB

OMO.#: OMO-STGW60H65FB-STMICROELECTRONICS

IGBT 650V 80A 375W TO247
STGW60H65DFB

Mfr.#: STGW60H65DFB

OMO.#: OMO-STGW60H65DFB-STMICROELECTRONICS

IGBT 650V 80A 375W TO-247
STGW60H65F

Mfr.#: STGW60H65F

OMO.#: OMO-STGW60H65F-STMICROELECTRONICS

IGBT Transistors 60A 650V FST IGBT Very High Switching
STGW60H65DF

Mfr.#: STGW60H65DF

OMO.#: OMO-STGW60H65DF-STMICROELECTRONICS

IGBT 650V 120A 360W TO247
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de STGW60H65DFB-4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,62 US$
6,62 US$
10
6,28 US$
62,84 US$
100
5,95 US$
595,35 US$
500
5,62 US$
2 811,40 US$
1000
5,29 US$
5 292,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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