IPB144N12N3 G

Mfr. #:: IPB144N12N3 G
Fabricante:: Infineon Technologies
Descripción:: IGBT Transistors MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPB144N12N3 G Ficha de datos
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Más información:: IPB144N12N3 G más información

Atributo del producto
Valor de atributo

Fabricante: INFINEON

categoria de producto: FET - Single

Serie: OptiMOS 3

embalaje: Carrete

Alias de parte: IPB144N12N3GATMA1 IPB144N12N3GXT SP000694166

Unidad de peso: 0.139332 oz

Estilo de montaje: SMD / SMT

Nombre comercial: OptiMOS

Paquete-Estuche: TO-252-3

Tecnología: Si

Número de canales: 1 Channel

Configuración: Único

Tipo transistor: 1 N-Channel

Disipación de potencia Pd: 107 W

Temperatura máxima de funcionamiento: + 175 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 4 ns

Hora de levantarse: 9 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 56 A

Vds-Drain-Source-Breakdown-Voltage: 120 V

Resistencia a la fuente de desagüe de Rds: 14.7 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 24 nS

Qg-Gate-Charge: 37 nC

Tags: IPB144, IPB14, IPB1, IPB

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

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IPB144N12N3 G Más información

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPB144N12N3GATMA1 DISTI # V72:2272_06384193	Infineon Technologies AG	Trans MOSFET N-CH 120V 56A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB144N12N3GATMA1 DISTI # V36:1790_06384193	Infineon Technologies AG	Trans MOSFET N-CH 120V 56A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB144N12N3GATMA1 DISTI # IPB144N12N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 120V 56A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2821In Stock	500:$1.0798 100:$1.3143 10:$1.6350 1:$1.8200
IPB144N12N3GATMA1 DISTI # IPB144N12N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 120V 56A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2821In Stock	500:$1.0798 100:$1.3143 10:$1.6350 1:$1.8200
IPB144N12N3GATMA1 DISTI # IPB144N12N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 120V 56A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	10000:$0.7624 5000:$0.7788 2000:$0.8087 1000:$0.8686
IPB144N12N3 G DISTI # IPB144N12N3 G	Infineon Technologies AG	Trans MOSFET N-CH 120V 56A 3-Pin TO-263 T/R (Alt: IPB144N12N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	50000:$0.6894 25000:$0.6982 10000:$0.7073 5000:$0.7166 3000:$0.7359 2000:$0.7564 1000:$0.7780
IPB144N12N3 G DISTI # SP000694166	Infineon Technologies AG	Trans MOSFET N-CH 120V 56A 3-Pin TO-263 T/R (Alt: SP000694166) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€0.6729 6000:€0.7179 4000:€0.8249 2000:€0.9869 1000:€1.1769
IPB144N12N3GATMA1 DISTI # IPB144N12N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 120V 56A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB144N12N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.6909 6000:$0.7039 4000:$0.7289 2000:$0.7559 1000:$0.7839
IPB144N12N3GATMA1 DISTI # SP000694166	Infineon Technologies AG	Trans MOSFET N-CH 120V 56A 3-Pin(2+Tab) TO-263 (Alt: SP000694166) RoHS: Compliant Min Qty: 1000	Europe - 0	10000:€0.6339 6000:€0.6829 4000:€0.7399 2000:€0.8079 1000:€0.9869
IPB144N12N3GATMA1 DISTI # 50Y2009	Infineon Technologies AG	MOSFET Transistor, N Channel, 41 A, 120 V, 0.0123 ohm, 10 V, 3 V RoHS Compliant: Yes	0	500:$0.9640 250:$1.0300 100:$1.1000 50:$1.1900 25:$1.2800 10:$1.3700 1:$1.6200
IPB144N12N3 G DISTI # 726-IPB144N12N3G	Infineon Technologies AG	MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 RoHS: Compliant	4434	1:$1.6000 10:$1.3600 100:$1.0900 500:$0.9540 1000:$0.7900 2000:$0.7360 5000:$0.7090 10000:$0.6810
IPB144N12N3GATMA1 DISTI # 726-IPB144N12N3GATMA	Infineon Technologies AG	MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 RoHS: Compliant	892	1:$1.6000 10:$1.3600 100:$1.0900 500:$0.9540 1000:$0.7900 2000:$0.7360 5000:$0.7090 10000:$0.6810
IPB144N12N3GATMA1 DISTI # 8977201P	Infineon Technologies AG	MOSFET N-CHANNEL 120V 56A OPTIMOS TO263, RL	230	500:£0.7050 200:£0.7520 100:£0.8010 20:£0.9200
IPB144N12N3GATMA1 DISTI # 2480804	Infineon Technologies AG	MOSFET, N-CH, 120V, 41A, TO-263-3 RoHS: Compliant	473	5000:$1.1000 2000:$1.1400 1000:$1.2200 500:$1.4700 100:$1.6800 10:$2.1000 1:$2.4600
IPB144N12N3GATMA1 DISTI # 2480804RL	Infineon Technologies AG	MOSFET, N-CH, 120V, 41A, TO-263-3 RoHS: Compliant	0	5000:$1.1000 2000:$1.1400 1000:$1.2200 500:$1.4700 100:$1.6800 10:$2.1000 1:$2.4600
IPB144N12N3GATMA1 DISTI # 2480804	Infineon Technologies AG	MOSFET, N-CH, 120V, 41A, TO-263-3	478	500:£0.7430 250:£0.7960 100:£0.8490 25:£1.0600 5:£1.1600

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: IPB144N12N3 G OMO.#: OMO-IPB144N12N3-G	MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3
	Mfr.#: IPB144N12N3GATMA1 OMO.#: OMO-IPB144N12N3GATMA1	MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3
	Mfr.#: IPB144N12N3GATMA1 OMO.#: OMO-IPB144N12N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 120V 56A TO263-3
	Mfr.#: IPB144N12N3G OMO.#: OMO-IPB144N12N3G-1190	Nuevo y original
	Mfr.#: IPB144N12N3GS OMO.#: OMO-IPB144N12N3GS-1190	Nuevo y original
	Mfr.#: IPB144N12N3 G OMO.#: OMO-IPB144N12N3-G-126	IGBT Transistors MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3

Disponibilidad

Valores:: Available
En orden:: 1000
Ingrese la cantidad:

El precio actual de IPB144N12N3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,02 US$~~; ~~1,02 US$~~

10: ~~0,97 US$~~; ~~9,70 US$~~

100: ~~0,92 US$~~; ~~91,94 US$~~

500: ~~0,87 US$~~; ~~434,15 US$~~

1000: ~~0,82 US$~~; ~~817,20 US$~~

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IPB144N12N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes