OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

BSM35GB120DN2

BSM35GB120DN2
Mfr. #:
BSM35GB120DN2
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules 1200V 35A DUAL
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSM35GB120DN2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos IGBT
RoHS:
N
Producto:
Módulos de silicio IGBT
Configuración:
Medio puente
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
3.2 V
Corriente continua del colector a 25 C:
50 A
Corriente de fuga puerta-emisor:
150 nA
Pd - Disipación de energía:
280 W
Paquete / Caja:
Half Bridge1
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Bandeja
Altura:
30.5 mm
Longitud:
94 mm
Ancho:
34 mm
Marca:
Infineon Technologies
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
10
Subcategoría:
IGBT
Parte # Alias:
BSM35GB120DN2HOSA1 SP000100461
Tags
BSM35GB120DN, BSM35GB, BSM35, BSM3, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***omponent
IGBT Power Module Half-bridge Including fast free-wheeling diodes Doubled diode area
***ser
IGBT - Standard Modules 1200V 35A DUAL
Parte # Mfg. Descripción Valores Precio
BSM35GB120DN2HOSA1
DISTI # BSM35GB120DN2HOSA1-ND		Infineon Technologies AGIGBT 2 MED POWER 34MM-1
RoHS: Compliant
Min Qty: 10
Container: Tray		Limited Supply - Call
  • 10:$63.2560
BSM 35 GB 120 DN2
DISTI # SP000100461		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 50A 7-Pin 34mm (Alt: SP000100461)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€75.2900
  • 10:€60.8900
  • 25:€55.2900
  • 50:€53.4900
  • 100:€51.6900
  • 500:€50.1900
  • 1000:€49.0900
BSM35GB120DN2HOSA1
DISTI # BSM35GB120DN2HOSA1		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 35A nom - Trays (Alt: BSM35GB120DN2HOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
  • 10:$54.6900
  • 20:$53.9900
  • 40:$52.5900
  • 60:$51.2900
  • 100:$50.0900
BSM35GB120DN2HOSA1
DISTI # BSM35GB120DN2HOSA1		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 35A nom - Bulk (Alt: BSM35GB120DN2HOSA1)
Min Qty: 7
Container: Bulk		Americas - 0
  • 8:$55.8900
  • 10:$53.8900
  • 18:$51.8900
  • 40:$50.1900
  • 80:$49.2900
BSM35GB120DN2
DISTI # 641-BSM35GB120DN2		Infineon Technologies AGIGBT Modules 1200V 35A DUAL
RoHS: Not compliant		0
    BSM35GB120DN2HOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant    		1
    • 1000:$51.1100
    • 500:$53.8000
    • 100:$56.0100
    • 25:$58.4100
    • 1:$62.9000
    Imagen Parte # Descripción
    BSM35GD120DLCE3224

    Mfr.#: BSM35GD120DLCE3224

    OMO.#: OMO-BSM35GD120DLCE3224

    		 IGBT Modules N-CH 1.2KV 70A
    BSM35GP120G

    Mfr.#: BSM35GP120G

    OMO.#: OMO-BSM35GP120G

    		 IGBT Modules 1200V 35A PIM
    BSM35GB120DN2

    Mfr.#: BSM35GB120DN2

    OMO.#: OMO-BSM35GB120DN2

    		 IGBT Modules 1200V 35A DUAL
    BSM35GD120DN2BOSA1

    Mfr.#: BSM35GD120DN2BOSA1

    OMO.#: OMO-BSM35GD120DN2BOSA1-1190

    		 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
    BSM35GD120D2

    Mfr.#: BSM35GD120D2

    OMO.#: OMO-BSM35GD120D2-1190

    		 Nuevo y original
    BSM35GD120DN2 E3224

    Mfr.#: BSM35GD120DN2 E3224

    OMO.#: OMO-BSM35GD120DN2-E3224-1190

    		 Nuevo y original
    BSM35GD120DN2(DLC)

    Mfr.#: BSM35GD120DN2(DLC)

    OMO.#: OMO-BSM35GD120DN2-DLC--1190

    		 Nuevo y original
    BSM35GD120DN2E3224(6)

    Mfr.#: BSM35GD120DN2E3224(6)

    OMO.#: OMO-BSM35GD120DN2E3224-6--1190

    		 Nuevo y original
    BSM35GD120ND2

    Mfr.#: BSM35GD120ND2

    OMO.#: OMO-BSM35GD120ND2-1190

    		 Nuevo y original
    BSM35GD120DLCE3224BOSA1

    Mfr.#: BSM35GD120DLCE3224BOSA1

    OMO.#: OMO-BSM35GD120DLCE3224BOSA1-INFINEON-TECHNOLOGIES

    		 70 A, 1200 V, N-CHANNEL IGBT
    Disponibilidad
    Valores:
    Available
    En orden:
    4000
    Ingrese la cantidad:
    El precio actual de BSM35GB120DN2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    10
    63,68 US$
    636,80 US$
    30
    62,43 US$
    1 872,90 US$
    100
    57,85 US$
    5 785,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    More Newest Products
    Top