BFR840L3RHESD BOARD

BFR840L3RHESD BOARD
Mfr. #:
BFR840L3RHESD BOARD
Fabricante:
Infineon Technologies AG
Descripción:
Eval Board for BFR840L3RHESD Transistor (Alt: SP000982226)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BFR840L3RHESD BOARD Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
BFR840, BFR84, BFR8, BFR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
The BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed
***et Europe
Eval Board for BFR840L3RHESD Transistor
***ineon
The BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board. | Summary of Features: Robust ultra low noise amplifier based on Infineons reliable high volume SiGe:C bipolar technology Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness Very high transition frequency fT = 75 GHz enables best in class noise performance at high frequencies: NFmin = 0.65 dB at 5.5 GHz, 1.1 dB at 12 GHz, 1.8 V, 5 mA High gain |S21|2 = 19 dB at 5.5 GHz, 1.8 V, 10 mA Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor) Low power consumption, ideal for mobile applications Pb free (RoHS compliant) and halogen free very small thin leadless package (package height 0.31 mm, ideal for modules) Qualification report according to AEC-Q101 available
Parte # Mfg. Descripción Valores Precio
BFR840L3RHESD BOARD
DISTI # SP000982226
Infineon Technologies AGEval Board for BFR840L3RHESD Transistor (Alt: SP000982226)
RoHS: Compliant
Min Qty: 1
Europe - 0
    BFR840L3RHESDBOARDTOBO1
    DISTI # 726-BFR840L3RHESDBRD
    Infineon Technologies AGRF Development Tools
    RoHS: Not compliant
    0
      Imagen Parte # Descripción
      BFR840L3RHESDE6327XTSA1

      Mfr.#: BFR840L3RHESDE6327XTSA1

      OMO.#: OMO-BFR840L3RHESDE6327XTSA1

      RF Bipolar Transistors RF BIP TRANSISTORS
      BFR840L3RHESD

      Mfr.#: BFR840L3RHESD

      OMO.#: OMO-BFR840L3RHESD-INFINEON-TECHNOLOGIES

      Nuevo y original
      BFR840L3RHESD E6327

      Mfr.#: BFR840L3RHESD E6327

      OMO.#: OMO-BFR840L3RHESD-E6327-INFINEON-TECHNOLOGIES

      Nuevo y original
      BFR840L3RHESDE6327

      Mfr.#: BFR840L3RHESDE6327

      OMO.#: OMO-BFR840L3RHESDE6327-INFINEON-TECHNOLOGIES

      Nuevo y original
      BFR840L3RHESD BOARD

      Mfr.#: BFR840L3RHESD BOARD

      OMO.#: OMO-BFR840L3RHESD-BOARD-1190

      Eval Board for BFR840L3RHESD Transistor (Alt: SP000982226)
      BFR840L3RHESDE6327XTSA1-CUT TAPE

      Mfr.#: BFR840L3RHESDE6327XTSA1-CUT TAPE

      OMO.#: OMO-BFR840L3RHESDE6327XTSA1-CUT-TAPE-1190

      Nuevo y original
      BFR840L3RHESDE6327XTSA1

      Mfr.#: BFR840L3RHESDE6327XTSA1

      OMO.#: OMO-BFR840L3RHESDE6327XTSA1-INFINEON-TECHNOLOGIES

      RF Bipolar Transistors RF BIP TRANSISTORS
      Disponibilidad
      Valores:
      Available
      En orden:
      3500
      Ingrese la cantidad:
      El precio actual de BFR840L3RHESD BOARD es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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      100
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      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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