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SIHG22N50D-GE3

SIHG22N50D-GE3
Mfr. #:
SIHG22N50D-GE3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET 500V 230mOhm@10V 22A N-Ch D-SRS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHG22N50D-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHG22N50D-GE3 más información
Atributo del producto
Valor de atributo
Tags
SIHG22N5, SIHG22, SIHG2, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
N-Channel MOSFET, 22 A, 500 V, 3-Pin TO-247AC Vishay SiHG22N50D-GE3
***ure Electronics
Single N-Channel 500 V 0.23 Ohm 98 nC 312 W Silicon Flange Mount Mosfet TO-247AC
***et Europe
Trans MOSFET N-CH 500V 22A 3-Pin TO-247AC
***ical
Trans MOSFET N-CH 500V 22A
***i-Key
MOSFET N-CH 500V 22A TO-247AC
***ark
MOSFET, N-CH, 500V, 22A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 500V, 22A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
Parte # Mfg. Descripción Valores Precio
SIHG22N50D-GE3
DISTI # V99:2348_09219131		Vishay IntertechnologiesN-CHANNEL 500V
RoHS: Compliant		500
  • 1000:$2.3720
  • 500:$2.7350
  • 100:$3.0780
  • 10:$3.5890
  • 1:$4.1650
SIHG22N50D-GE3
DISTI # SIHG22N50D-GE3-ND		Vishay SiliconixMOSFET N-CH 500V 22A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		18In Stock
  • 1000:$2.6861
  • 500:$3.1849
  • 100:$3.9332
  • 10:$4.7970
  • 1:$5.3700
SIHG22N50D-GE3
DISTI # 25872833		Vishay IntertechnologiesN-CHANNEL 500V
RoHS: Compliant		500
  • 500:$2.7350
  • 100:$3.0780
  • 10:$3.5890
  • 3:$4.1650
SIHG22N50D-GE3
DISTI # 27549453		Vishay IntertechnologiesN-CHANNEL 500V
RoHS: Compliant		75
  • 29:$2.2125
SIHG22N50D-GE3
DISTI # SIHG22N50D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 22A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG22N50D-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$2.4900
  • 1000:$2.3900
  • 2000:$2.2900
  • 3000:$2.1900
  • 5000:$2.1900
SIHG22N50D-GE3
DISTI # 62W0515		Vishay IntertechnologiesMOSFET Transistor, N Channel, 22 A, 500 V, 0.185 ohm, 10 V, 3 V RoHS Compliant: Yes75
  • 1:$1.7700
  • 10:$1.7700
  • 25:$1.7700
  • 50:$1.7700
  • 100:$1.7700
  • 500:$1.7700
  • 1000:$1.7700
  • 2500:$1.7700
SIHG22N50D-GE3
DISTI # 78-SIHG22N50D-GE3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-247AC
RoHS: Compliant		500
  • 1:$4.8900
  • 10:$4.0500
  • 100:$3.3400
  • 250:$3.2300
  • 500:$2.9000
  • 1000:$2.4500
  • 2500:$2.3200
SIHG22N50D-GE3
DISTI # 7879197P		Vishay IntertechnologiesMOSFET N-CH 500V 22A LOW CAP. TO247AC, RL42
  • 10:£2.5300
  • 20:£2.5200
  • 50:£2.5100
  • 250:£2.3400
SIHG22N50DGE3Vishay IntertechnologiesPower Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		Europe - 375
    SIHG22N50DGE3Vishay Siliconix 
    RoHS: Compliant    		Europe - 125
      SIHG22N50D-GE3
      DISTI # 2283626      		Vishay IntertechnologiesMOSFET, N-CH, 500V, 22A, TO-247AC
      RoHS: Compliant      		0
      • 1:$7.7400
      • 10:$6.4100
      • 100:$5.2900
      • 250:$5.1200
      • 500:$4.5900
      • 1000:$3.8800
      • 2500:$3.6800
      • 5000:$3.5500
      SIHG22N50D-GE3
      DISTI # C1S803601945738      		Vishay IntertechnologiesTrans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC
      RoHS: Compliant      		500
      • 500:$2.7350
      • 100:$3.0780
      • 10:$3.5890
      • 1:$4.1650
      SIHG22N50D-GE3
      DISTI # 2283626      		Vishay IntertechnologiesMOSFET, N-CH, 500V, 22A, TO-247AC
      RoHS: Compliant      		0
      • 1:£3.7000
      • 10:£2.5400
      • 100:£2.4500
      • 250:£2.3600
      • 500:£2.2200
      Imagen Parte # Descripción
      SIHG22N60EF-GE3

      Mfr.#: SIHG22N60EF-GE3

      OMO.#: OMO-SIHG22N60EF-GE3

      		 MOSFET Nch 600V Vds 30V Vgs TO-247AC; w/diode
      SIHG22N60EL-GE3

      Mfr.#: SIHG22N60EL-GE3

      OMO.#: OMO-SIHG22N60EL-GE3

      		 MOSFET 600V Vds 30V Vgs TO-247AC
      SIHG22N65E-GE3

      Mfr.#: SIHG22N65E-GE3

      OMO.#: OMO-SIHG22N65E-GE3-VISHAY

      		 IGBT Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
      SIHG22N60S-E3

      Mfr.#: SIHG22N60S-E3

      OMO.#: OMO-SIHG22N60S-E3-126

      		 IGBT Transistors MOSFET 600V N-Channel Superjunction TO-247
      SIHG22N50D

      Mfr.#: SIHG22N50D

      OMO.#: OMO-SIHG22N50D-1190

      		 Nuevo y original
      SIHG22N60E-E3

      Mfr.#: SIHG22N60E-E3

      OMO.#: OMO-SIHG22N60E-E3-VISHAY

      		 MOSFET N-CH 600V 21A TO247AC
      SIHG22N60E-GE3

      Mfr.#: SIHG22N60E-GE3

      OMO.#: OMO-SIHG22N60E-GE3-VISHAY

      		 MOSFET N-CH 600V 21A TO247AC
      SIHG22N60S

      Mfr.#: SIHG22N60S

      OMO.#: OMO-SIHG22N60S-1190

      		 Nuevo y original
      SIHG22N60S-E3,22N60

      Mfr.#: SIHG22N60S-E3,22N60

      OMO.#: OMO-SIHG22N60S-E3-22N60-1190

      		 Nuevo y original
      SIHG22N60EL-GE3

      Mfr.#: SIHG22N60EL-GE3

      OMO.#: OMO-SIHG22N60EL-GE3-VISHAY

      		 MOSFET N-CH 600V 21A TO247AC
      Disponibilidad
      Valores:
      Available
      En orden:
      5000
      Ingrese la cantidad:
      El precio actual de SIHG22N50D-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,66 US$
      2,66 US$
      10
      2,52 US$
      25,22 US$
      100
      2,39 US$
      238,95 US$
      500
      2,26 US$
      1 128,40 US$
      1000
      2,12 US$
      2 124,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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