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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IRFW840BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 9600 |
|
| IRFW840BTM DISTI # 512-IRFW840BTM | ON Semiconductor | MOSFET 500V N-Channel B-FET RoHS: Compliant | 0 |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: IRFW820A OMO.#: OMO-IRFW820A-1190 |
Nuevo y original |
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Mfr.#: IRFW820ATM OMO.#: OMO-IRFW820ATM-1190 |
Nuevo y original |
|
|
Mfr.#: IRFW820BTM OMO.#: OMO-IRFW820BTM-1190 |
MOSFET 500V N-Channel B-FET |
|
|
Mfr.#: IRFW830ATM OMO.#: OMO-IRFW830ATM-1190 |
Nuevo y original |
|
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Mfr.#: IRFW830B OMO.#: OMO-IRFW830B-1190 |
Nuevo y original |
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Mfr.#: IRFW830BTM OMO.#: OMO-IRFW830BTM-1190 |
Nuevo y original |
|
|
Mfr.#: IRFW840B OMO.#: OMO-IRFW840B-1190 |
Nuevo y original |
|
|
Mfr.#: IRFW840BTM OMO.#: OMO-IRFW840BTM-1190 |
Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: IRFW840BTM(WS) OMO.#: OMO-IRFW840BTM-WS--1190 |
Nuevo y original |
|
|
Mfr.#: IRFW840TM OMO.#: OMO-IRFW840TM-1190 |
Nuevo y original |
