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IXTQ88N30P

IXTQ88N30P
Mfr. #:
IXTQ88N30P
Fabricante:
Littelfuse
Descripción:
MOSFET 88 Amps 300V 0.04 Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTQ88N30P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTQ88N30P DatasheetIXTQ88N30P Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-3P-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
300 V
Id - Corriente de drenaje continua:
88 A
Rds On - Resistencia de la fuente de drenaje:
40 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
600 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
IXTQ88N30
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Otoño:
25 ns
Tipo de producto:
MOSFET
Hora de levantarse:
24 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
96 ns
Tiempo típico de retardo de encendido:
25 ns
Unidad de peso:
0.194007 oz
Tags
IXTQ88, IXTQ8, IXTQ, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 300V 88A 3-Pin(3+Tab) TO-3P
***i-Key
MOSFET N-CH 300V 88A TO-3P
***ark
Mosfet, N, To-3P; Transistor Polarity:n Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:300V; On Resistance Rds(On):0.04Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:600W; Msl:- Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:600W; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:6300pF; Current Id Max:88A; Junction to Case Thermal Resistance A:0.21°C/W; N-channel Gate Charge:180nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:250ns; Termination Type:Through Hole; Voltage Vds Typ:300V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, TO-3P; Polarità Transistor:Canale N; Corrente Continua di Drain Id:88A; Tensione Drain Source Vds:300V; Resistenza di Attivazione Rds(on):0.04ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:600W; Modello Case Transistor:TO-3P; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017); Capacità Ciss Tipica:6300pF; Carica Gate Canale N:180nC; Corrente Id Max:88A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Resistenza Termica A da Giunzione a Case:0.21°C/W; Temperatura di Esercizio Min:-55°C; Tempo di Recupero Inverso trr Max:250ns; Tensione Vds Tipica:300V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Foro Passante
Parte # Mfg. Descripción Valores Precio
IXTQ88N30P
DISTI # IXTQ88N30P-ND		IXYS CorporationMOSFET N-CH 300V 88A TO-3P
RoHS: Compliant
Min Qty: 1
Container: Tube		57In Stock
  • 510:$6.2403
  • 120:$7.4481
  • 30:$8.2533
  • 1:$10.0700
IXTQ88N30P
DISTI # 747-IXTQ88N30P		IXYS CorporationMOSFET 88 Amps 300V 0.04 Rds
RoHS: Compliant		4
  • 1:$10.5200
  • 10:$9.4700
  • 25:$7.8800
  • 50:$7.3200
  • 100:$7.1600
  • 250:$6.5300
  • 500:$5.9600
  • 1000:$5.6800
IXTQ88N30P
DISTI # 1427392		IXYS CorporationMOSFET, N, TO-3P
RoHS: Compliant		1
  • 1:$16.0600
  • 30:$13.1600
  • 120:$11.8800
  • 510:$9.9500
IXTQ88N30P
DISTI # 1427392		IXYS CorporationMOSFET, N, TO-3P
RoHS: Compliant		0
  • 1:£8.8600
  • 5:£8.2800
  • 10:£6.2000
  • 50:£5.7600
  • 100:£5.6400
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Disponibilidad
Valores:
37
En orden:
2020
Ingrese la cantidad:
El precio actual de IXTQ88N30P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
9,15 US$
9,15 US$
10
8,32 US$
83,20 US$
25
7,50 US$
187,50 US$
50
7,32 US$
366,00 US$
100
6,77 US$
677,00 US$
250
6,53 US$
1 632,50 US$
500
5,67 US$
2 835,00 US$
1000
5,27 US$
5 270,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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